San San Yu

US Patent:

20130157460, Jun 20, 2013

Filed:

Dec 14, 2012

Appl. No.:

13/714588

Inventors:

Xinyu Fu - Pleasanton CA, US
Wei Tang - Santa Clara CA, US
Kavita Shah - Mountain View CA, US
Srinivas Gandikota - Santa Clara CA, US
San H. Yu - Cupertino CA, US
Avgerinos Gelatos - Redwood City CA, US

International Classification:

H01L 29/40

US Classification:

438660

Abstract:

Methods for annealing a contact metal layer for a metal silicidation process are provided in the present invention. In one embodiment, a method for annealing a contact metal layer for a silicidation process in a semiconductor device includes providing a substrate having a contact metal layer disposed thereon in a thermal annealing processing chamber, providing a heat energy to the contact metal layer in the thermal processing chamber, supplying a gas mixture including a nitrogen gas and a hydrogen gas while providing the heat energy to the contact layer in the thermal processing chamber, wherein the nitrogen gas and the hydrogen gas is supplied at a ratio between about 1:10 and about 1:1, and forming a metal silicide layer on the substrate.

US Patent:

20140087091, Mar 27, 2014

Filed:

Sep 24, 2012

Appl. No.:

13/625229

Inventors:

- Santa Clara CA, US
Bo Zheng - Saratoga CA, US
Hua Ai - Mountain View CA, US
Michael Jackson - Sunnyvale CA, US
Xiaoxiong Yuan - San Jose CA, US
Hougong Wang - Pleasanton CA, US
Salvador P. Umotoy - Milpitas CA, US
San H. Yu - Cupertino CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B05B 1/14
C23C 16/34

US Classification:

427569, 239548

Abstract:

Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.