Sang O Ahn

US Patent:

8088563, Jan 3, 2012

Filed:

Nov 21, 2006

Appl. No.:

11/603698

Inventors:

Sang H. Ahn - Foster City CA, US
Sudha Rathi - San Jose CA, US
Heraldo L. Bothelho - Palo Alto CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G03F 7/30
H05H 1/30

US Classification:

430322, 430325, 430464, 427569, 427578

Abstract:

We have traced the detachment of photoresist during development of patterned features in the range of about 90 nm and smaller to a combination of the reduced “foot print” of the pattern on the underlying substrate and to the contact angle between the underlying substrate surface and the developing reagent. By maintaining a contact angle of about 30 degrees or greater, the detachment of the photoresist from the underlying substrate can be avoided for photoresists including feature sizes in the range of about 90 nm. We have achieved an increased contact angle between the DARC surface and a water-based CAR photoresist developer while simultaneously reducing CAR poisoning by treating the surface of the DARC after film formation.

US Patent:

8211626, Jul 3, 2012

Filed:

Dec 13, 2006

Appl. No.:

11/639274

Inventors:

Sang H. Ahn - Foster City CA, US
Sudha Rathi - San Jose CA, US
Heraldo L. Bothelho - Palo Alto CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G03F 7/30
H05H 1/30

US Classification:

430322, 430311, 427569, 427535, 427578

Abstract:

We have determined that it is necessary to remove hydroxyl groups from the surface of a DARC over which a CAR photoresist is applied, to reduce poisoning of the photoresist during imaging. The poisoning is reduced by treating the surface of the DARC film with a hydrogen or helium-containing plasma which is capable of removing the hydroxyl groups.

US Patent:

20030059535, Mar 27, 2003

Filed:

Sep 25, 2001

Appl. No.:

09/964075

Inventors:

Lee Luo - Fremont CA, US
Sang Ahn - Santa Clara CA, US
Aihua Chen - San Jose CA, US
Ramaseshan Iyer - Santa Clara CA, US
Shulin Wang - Campbell CA, US
Randhir Singh Thakur - San Jose CA, US

International Classification:

B32B009/00
C23C016/00

US Classification:

427/255280, 428/446000, 428/698000, 427/569000

Abstract:

A method for film deposition that includes, flowing a first reactive gas over a top surface of a wafer in a cold wall single wafer process chamber to form a first half-layer of the film on the wafer, stopping the flow of the first reactive gas, removing residual first reactive gas from the cold wall single wafer process chamber, flowing a second reactive gas over the first half-layer to form a second half-layer of the film where deposition of the second half-layer is non self-limiting, controlling a thickness of the second half-layer by regulating process parameters within the cold wall single wafer process chamber, stopping the flow of the second reactive gas; and removing residual second reactive gas from the cold wall single wafer process chamber.

US Patent:

20050118541, Jun 2, 2005

Filed:

Nov 28, 2003

Appl. No.:

10/724454

Inventors:

Sang Ahn - Foster City CA, US
Sudha Rathi - San Jose CA, US
Heraldo Bothelho - Palo Alto CA, US

International Classification:

G03C005/18

US Classification:

430464000

Abstract:

We have traced the detachment of photoresist during development of patterned features in the range of about 90 nm and smaller to a combination of the reduced “foot print” of the pattern on the underlying substrate and to the contact angle between the underlying substrate surface and the developing reagent. By maintaining a contact angle of about 30 degrees or greater, the detachment of the photoresist from the underlying substrate can be avoided for photoresists including feature sizes in the range of about 90 nm. We have achieved an increased contact angle between the DARC surface and a water-based CAR photoresist developer while simultaneously reducing CAR poisoning by treating the surface of the DARC after film formation.