Sang W Ahn

US Patent:

6559074, May 6, 2003

Filed:

Dec 12, 2001

Appl. No.:

10/015713

Inventors:

Steven A. Chen - San Jose CA
Xianzhi Tao - Palo Alto CA
Shulin Wang - Campbell CA
Lee Luo - Fremont CA
Kegang Huang - Fremont CA
Sang H. Ahn - Santa Clara CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2131

US Classification:

438791, 438778, 438958, 257649

Abstract:

A silicon nitride layer is formed over transistor gates while the processing temperature is relatively high, typically at least 500Â C. , and the pressure is relatively high, typically at least 50 Torr, to obtain a relatively high rate of formation of the silicon nitride layer. Processing conditions are controlled so as to more uniformly form the silicon nitride layer. Generally, the ratio of the NH gas to the silicon-containing gas by volume is selected sufficiently high so that, should the surface have a low region between transistor gates which is less than 0. 15 microns wide and have a height-to-width ratio of at least 1. 0, as well as an entirely flat area of at least 5 microns by 5 microns, the layer forms at a rate of not more than 25% faster on the flat area than on a base of the low region.

US Patent:

6853043, Feb 8, 2005

Filed:

Nov 4, 2002

Appl. No.:

10/288123

Inventors:

Wendy H. Yeh - Mountain View CA, US
Sang Ahn - San Mateo CA, US
Christopher Dennis Bencher - Sunnyvale CA, US
Hichem M'Saad - Santa Clara CA, US
Sudha Rathi - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L031/0232

US Classification:

257437, 257774, 438 72, 438637, 438638, 438700

Abstract:

A layer of antireflective coating (ARC) material for use in photolithographic processing. In one embodiment the ARC material has the formula SiOH:C, where w, x, y and z represent the atomic percentage of silicon, oxygen, hydrogen and carbon, respectively, in the material and where w is between 35 and 55, x is between 35 and 55, y is between 4 and 15, z is between 0 and 3 and the atomic percentage of nitrogen in the material is less than or equal to 1 atomic percent.

US Patent:

6927178, Aug 9, 2005

Filed:

Dec 10, 2003

Appl. No.:

10/732904

Inventors:

Bok Hoen Kim - San Jose CA, US
Sudha Rathi - San Jose CA, US
Sang H. Ahn - Foster City CA, US
Christopher D. Bencher - San Jose CA, US
Yuxiang May Wang - Palo alto CA, US
Hichem M'Saad - Santa clara CA, US
Mario D. Silvetti - Morgan Hill CA, US
Miguel Fung - Redwood City CA, US
Keebum Jung - Gilroy CA, US
Lei Zhu - Sunnyvale CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L021/31
H01L021/469

US Classification:

438778, 438790, 438952

Abstract:

Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an oxygen and carbon containing compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen. In another aspect, the dielectric material forms one or both layers in a dual layer anti-reflective coating.

US Patent:

7064078, Jun 20, 2006

Filed:

Jan 30, 2004

Appl. No.:

10/768724

Inventors:

Wei Liu - San Jose CA, US
Jim Zhongyi He - Sunnyvale CA, US
Sang H. Ahn - Foster City CA, US
Meihua Shen - Fremont CA, US
Hichem M'Saad - Santa Clara CA, US
Wendy H. Yeh - Mountain View CA, US
Chistopher D. Bencher - San Jose CA, US

Assignee:

Applied Materials - Santa Clara CA

International Classification:

H01L 21/302

US Classification:

438717, 438723, 438724, 216 41, 216 58, 216 67, 216 72, 216 75, 216 79, 216 81

Abstract:

A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.

US Patent:

7080528, Jul 25, 2006

Filed:

Oct 23, 2002

Appl. No.:

10/279366

Inventors:

Hichem M'Saad - Santa Clara CA, US
Anchuan Wang - Fremont CA, US
Sang Ahn - San Mateo CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C03B 37/018

US Classification:

65386, 65386, 65530

Abstract:

Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.

US Patent:

7105460, Sep 12, 2006

Filed:

Jul 11, 2002

Appl. No.:

10/193489

Inventors:

Bok Hoen Kim - San Jose CA, US
Sudha Rathi - San Jose CA, US
Sang H. Ahn - Santa Clara CA, US
Christopher D. Bencher - San Jose CA, US
Yuxiang May Wang - Palo Alto CA, US
Hichem M'Saad - Santa Clara CA, US
Mario D. Silvetti - Morgan Hill CA, US

Assignee:

Applied Materials - Santa Clara CA

International Classification:

H01L 21/31

US Classification:

438778, 438710, 438725, 438763, 438780, 438789, 438790

Abstract:

Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an organosilicon compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen.

US Patent:

7297376, Nov 20, 2007

Filed:

Jul 7, 2006

Appl. No.:

11/483842

Inventors:

Kang Sub Yim - Santa Clara CA, US
Kelvin Chan - Santa Clara CA, US
Nagarajan Rajagopalan - Santa Clara CA, US
Josephine Ju-Hwei Chang Liu - Boise ID, US
Sang H. Ahn - Santa Clara CA, US
Yi Zheng - San Jose CA, US
Sang In Yi - Sunnyvale CA, US
Vu Ngoc Tran Nguyen - Santa Clara CA, US
Alexandros T. Demos - Fremont CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H05H 1/24

US Classification:

427578, 427532

Abstract:

A method for depositing a low dielectric constant film is provided by positioning a substrate within a processing chamber having a powered electrode, and flowing into the processing chamber an initiation gas mixture of a flow rate of one or more organosilicon compounds and a flow rate of one or more oxidizing gases to deposit an initiation layer by applying an RF power to the electrode. The organosilicon compound flow rate is then ramped-up to a final flow rate to deposit a first transition layer, upon which one or more porogen compounds is introduced and the flow rate porogen compound is ramped up to a final deposition rate while depositing a second transition layer. A porogen doped silicon oxide layer is then deposited by flowing the final porogen and organosilicon flow rates until the RF power is turned off.

US Patent:

7325419, Feb 5, 2008

Filed:

Jun 5, 2006

Appl. No.:

11/422299

Inventors:

Hichem M'Saad - Santa Clara CA, US
Anchuan Wang - Fremont CA, US
Sang Ahn - San Mateo CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C03B 37/022
G02B 6/10

US Classification:

65386, 385129

Abstract:

Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.

Address:

517 W 46 St APT 202, New York, NY 10036

VIN:

WDBWK54F77F144862

Make:

MERCEDES BENZ

Model:

SLK CLASS

Year:

2007