Sang Pil Yu

US Patent:

6740585, May 25, 2004

Filed:

Jan 9, 2002

Appl. No.:

10/044412

Inventors:

Ki Hwan Yoon - Sunnyvale CA
Yonghwa Chris Cha - San Jose CA
Sang Ho Yu - Sunnyvale CA
Hafiz Farooq Ahmad - Newark CA
Ho Sun Wee - Santa Clara CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2141

US Classification:

438680, 438682, 438685

Abstract:

Methods and apparatus are provided for forming a metal or metal silicide barrier layer. In one aspect, a method is provided for processing a substrate including positioning a substrate having a silicon material disposed thereon in a substrate processing system, depositing a first metal layer on the substrate surface in a first processing chamber, forming a metal silicide layer by reacting the silicon material and the first metal layer, and depositing a second metal layer in situ on the substrate in a second processing chamber. In another aspect, the method is performed in an apparatus including a load lock chamber, the intermediate substrate transfer region including a first substrate transfer chamber and a second substrate transfer chamber, a physical vapor deposition processing chamber coupled to the first substrate transfer chamber, and a chemical vapor deposition chamber coupled to the second substrate transfer chamber.

US Patent:

7416979, Aug 26, 2008

Filed:

Jul 6, 2006

Appl. No.:

11/456073

Inventors:

Ki Hwan Yoon - Sunnyvale CA, US
Yonghwa Chris Cha - San Jose CA, US
Sang Ho Yu - Sunnyvale CA, US
Hafiz Farooq Ahmad - Newark CA, US
Ho Sun Wee - Santa Clara CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/00

US Classification:

438680, 438682, 438685

Abstract:

Embodiments are provided for a method to deposit barrier and tungsten materials on a substrate. In one embodiment, a method provides forming a barrier layer on a substrate and exposing the substrate to a silane gas to form a thin silicon-containing layer on the barrier layer during a soak process. The method further provides depositing a tungsten nucleation layer over the barrier layer and the thin silicon-containing layer during an atomic layer deposition process and depositing a tungsten bulk layer on the tungsten nucleation layer during a chemical vapor deposition process. In some examples, the barrier layer contains metallic cobalt and cobalt silicide, or metallic nickel and nickel silicide. In other examples, the barrier layer contains metallic titanium and titanium nitride, or metallic tantalum and tantalum nitride.

US Patent:

7611990, Nov 3, 2009

Filed:

Jul 10, 2008

Appl. No.:

12/171132

Inventors:

Ki Hwan Yoon - Sunnyvale CA, US
Yonghwa Chris Cha - San Jose CA, US
Sang Ho Yu - Sunnyvale CA, US
Hafiz Farooq Ahmad - Newark CA, US
Ho Sun Wee - Santa Clara CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/00

US Classification:

438680, 438682, 438685, 257E21165, 257E21169

Abstract:

Embodiments as described herein provide a method for depositing barrier layers and tungsten materials on substrates. In one embodiment, a method for depositing materials is provided which includes forming a barrier layer on a substrate, wherein the barrier layer contains a cobalt silicide layer and a metallic cobalt layer, exposing the barrier layer to a soak gas containing a reducing gas during a soak process, and forming a tungsten material over the barrier layer. In one example, the barrier layer may be formed by depositing a cobalt-containing material on a dielectric surface of the substrate and annealing the substrate to form the cobalt silicide layer from a lower portion of the cobalt-containing material and the metallic cobalt layer from an upper portion of the cobalt-containing material.

US Patent:

8291857, Oct 23, 2012

Filed:

Jun 30, 2009

Appl. No.:

12/494901

Inventors:

Hyman Lam - San Jose CA, US
Bo Zheng - Saratoga CA, US
Hua Ai - Mountain View CA, US
Michael Jackson - Sunnyvale CA, US
Xiaoxiong (John) Yuan - San Jose CA, US
Hou Gong Wang - Pleasanton CA, US
Salvador P. Umotoy - Antioch CA, US
Sang Ho Yu - Cupertino CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/452
C23C 16/455
C23F 1/00
H01L 21/306
C23C 16/06
C23C 16/22

US Classification:

118723ME, 118715, 15634533, 15634534, 15634535

Abstract:

Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

US Patent:

8293015, Oct 23, 2012

Filed:

Sep 14, 2011

Appl. No.:

13/232317

Inventors:

Hyman W. H. Lam - San Jose CA, US
Bo Zheng - Saratoga CA, US
Hua Ai - Mountain View CA, US
Michael Jackson - Sunnyvale CA, US
Xiaoxiong Yuan - San Jose CA, US
Hougong Wang - Pleasanton CA, US
Salvador P. Umotoy - Milpitas CA, US
Sang Ho Yu - Cupertino CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/455
C23F 1/00
H01L 21/306
C23C 16/06
C23C 16/22

US Classification:

118715, 15634533, 15634534

Abstract:

Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

US Patent:

8586479, Nov 19, 2013

Filed:

Jan 23, 2012

Appl. No.:

13/356002

Inventors:

Xinyu Fu - Pleasanton CA, US
Srinivas Gandikota - Santa Clara CA, US
Sang Ho Yu - Cupertino CA, US
Kavita Shah - Mountain View CA, US
Yu Lei - Foster City CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/44

US Classification:

438680, 438677, 438637

Abstract:

Methods for forming a contact metal layer in a contact structure in semiconductor devices are provided in the present invention. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device includes pulsing a deposition precursor gas mixture to a surface of a substrate disposed in a metal deposition processing chamber, pulsing a purge gas mixture to an edge of the substrate, wherein the purge gas mixture includes at least a hydrogen containing gas and an inert gas, and forming a contact metal layer on the substrate from the first deposition precursor gas mixture.

US Patent:

8637390, Jan 28, 2014

Filed:

May 26, 2011

Appl. No.:

13/116794

Inventors:

Seshadri Ganguli - Sunnyvale CA, US
Sang Ho Yu - Cupertino CA, US
Wei Ti Lee - San Jose CA, US
Hoon Kim - San Jose CA, US
Srinivas Gandikota - Santa Clara CA, US
Yu Lei - San Jose CA, US
Kevin Moraes - Fremont CA, US
Xianmin Tang - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/4763

US Classification:

438591, 438592

Abstract:

Metal gate structures and methods for forming thereof are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a feature formed in a high k dielectric layer may include depositing a first layer within the feature atop the dielectric layer; depositing a second layer comprising cobalt or nickel within the feature atop the first layer; and depositing a third layer comprising a metal within the feature atop the second layer to fill the feature, wherein at least one of the first or second layers forms a wetting layer to form a nucleation layer for a subsequently deposited layer, wherein one of the first, second, or third layers forms a work function layer, and wherein the third layer forms a gate electrode.

US Patent:

8642468, Feb 4, 2014

Filed:

Apr 25, 2011

Appl. No.:

13/093710

Inventors:

Seshadri Ganguli - Sunnyvale CA, US
Srinivas Gandikota - Santa Clara CA, US
Yu Lei - San Jose CA, US
Xinliang Lu - Fremont CA, US
Sang Ho Yu - Cupertino CA, US
Hoon Kim - Santa Clara CA, US
Paul F. Ma - Santa Clara CA, US
Mei Chang - Saratoga CA, US
Maitreyee Mahajani - Saratoga CA, US
Patricia M. Liu - Saratoga CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/4763

US Classification:

438648, 438582, 438595, 438656, 438683, 438685, 42724919, 257407, 257761, 257E2119

Abstract:

Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MX, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.