Sangchae Kim from 4061 White Porch Rd, Plano, TX 75024

Package For An Electronic Device
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US Patent:

8159056, Apr 17, 2012
Filed:

Jan 15, 2008
Appl. No.:

12/014665
Inventors:

Sangchae Kim - Huntersville NC, US
Steven Crist - Charlotte NC, US
Assignee:

RF Micro Devices, Inc. - Greensboro NC
International Classification:

H01L 23/02
US Classification:

257678, 257416, 257682, 310313 R, 333193, 438106, 438456, 216 2, 216 58, 216 83
Abstract:

A method of forming a device is provided. A substrate having a component is provided and a sacrificial layer is formed over the component. The sacrificial layer includes a cavity portion disposed about the component and a tunnel portion adjacent to the cavity portion. In addition, an encapsulation layer having a cover portion and a perimeter portion is formed over the sacrificial layer. The cover portion encapsulates the cavity portion such that the cavity portion forms a cavity within the cover portion. The perimeter portion is disposed over the tunnel portion. Moreover, an access hole is formed in the perimeter portion of the encapsulation layer.

Insulator Layer Based Mems Devices
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US Patent:

8399333, Mar 19, 2013
Filed:

Apr 29, 2011
Appl. No.:

13/097989
Inventors:

Sangchae Kim - Irvine CA, US
Tony Ivanov - Summerfield NC, US
Julio Costa - Oak Ridge NC, US
Assignee:

RF Micro Devices, Inc. - Greensboro NC
International Classification:

H01L 21/20
H01L 21/02
US Classification:

438396, 438381, 257532
Abstract:

The present invention relates to using an insulator layer between two metal layers of a semiconductor die to provide a micro-electromechanical systems (MEMS) device, such as an ohmic MEMS switch or a capacitive MEMS switch. In an ohmic MEMS switch, the insulator layer may be used to reduce metal undercutting during fabrication, to prevent electrical shorting of a MEMS actuator to a MEMS cantilever, or both. In a capacitive MEMS switch, the insulator layer may be used as a capacitive dielectric between capacitive plates, which are provided by the two metal layers. A fixed capacitive element may be provided by the insulator layer between the two metal layers. In one embodiment of the present invention, an ohmic MEMS switch, a capacitive MEMS switch, a fixed capacitive element, or any combination thereof may be integrated into a single semiconductor die.

Package For An Electronic Device
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US Patent:

8636912, Jan 28, 2014
Filed:

Feb 20, 2012
Appl. No.:

13/400355
Inventors:

Sangchae Kim - Huntersville NC, US
Steven Crist - Charlotte NC, US
Assignee:

RF Micro Devices, Inc. - Greensboro NC
International Classification:

C23F 1/00
H01L 23/02
US Classification:

216 2, 216 58, 216 83, 438106, 438456, 257416, 257678, 333193, 310313 R
Abstract:

A method of forming a device is provided. A substrate having a component is provided and a sacrificial layer is formed over the component. The sacrificial layer includes a cavity portion disposed about the component and a tunnel portion adjacent to the cavity portion. In addition, an encapsulation layer having a cover portion and a perimeter portion is formed over the sacrificial layer. The cover portion encapsulates the cavity portion such that the cavity portion forms a cavity within the cover portion. The perimeter portion is disposed over the tunnel portion. Moreover, an access hole is formed in the perimeter portion of the encapsulation layer.

Composite Sacrificial Structure For Reliably Creating A Contact Gap In A Mems Switch
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US Patent:

20120156820, Jun 21, 2012
Filed:

Dec 20, 2010
Appl. No.:

12/973105
Inventors:

Sangchae Kim - Irvine CA, US
Assignee:

RF MICRO DEVICES, INC. - Greensboro NC
International Classification:

H01L 21/02
US Classification:

438 50, 257E21002
Abstract:

The present Disclosure provides for fabrication devices and methods for manufacturing a micro-electromechanical system (MEMS) switch on a substrate. The MEMS fabrication device may have a first and second sacrificial layer that form the mold of an actuation member. The actuation member is formed over the first and second sacrificial layers to manufacture a MEMS switch from the MEMS fabrication device.

Insulator Layer Based Mems Devices
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US Patent:

7956429, Jun 7, 2011
Filed:

Jul 29, 2008
Appl. No.:

12/181356
Inventors:

Sangchae Kim - Huntersville NC, US
Tony Ivanov - Summerfield NC, US
Julio Costa - Summerfield NC, US
Assignee:

RF Micro Devices, Inc. - Greensboro NC
International Classification:

H01L 29/84
H01L 21/00
US Classification:

257415, 257414, 438 50, 438 52, 438 53
Abstract:

The present invention relates to using an insulator layer between two metal layers of a semiconductor die to provide a micro-electromechanicalsystems (MEMS) device, such as an ohmic MEMS switch or a capacitive MEMS switch. In an ohmic MEMS switch, the insulator layer may be used to reduce metal undercutting during fabrication, to prevent electrical shorting of a MEMS actuator to a MEMS cantilever, or both. In a capacitive MEMS switch, the insulator layer may be used as a capacitive dielectric between capacitive plates, which are provided by the two metal layers. A fixed capacitive element may be provided by the insulator layer between the two metal layers. In one embodiment of the present invention, an ohmic MEMS switch, a capacitive MEMS switch, a fixed capacitive element, or any combination thereof may be integrated into a single semiconductor die.

Sangchae Kim