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Sangchae Kim

from Plano, TX

Also known as:
  • Sang C Kim

Sangchae Kim Phones & Addresses

  • Plano, TX
  • Irvine, CA
  • Huntersville, NC
  • Wesley Chapel, FL
  • Charlotte, NC
  • Tampa, FL

Us Patents

  • Package For An Electronic Device

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  • US Patent:
    8159056, Apr 17, 2012
  • Filed:
    Jan 15, 2008
  • Appl. No.:
    12/014665
  • Inventors:
    Sangchae Kim - Huntersville NC, US
    Steven Crist - Charlotte NC, US
  • Assignee:
    RF Micro Devices, Inc. - Greensboro NC
  • International Classification:
    H01L 23/02
  • US Classification:
    257678, 257416, 257682, 310313 R, 333193, 438106, 438456, 216 2, 216 58, 216 83
  • Abstract:
    A method of forming a device is provided. A substrate having a component is provided and a sacrificial layer is formed over the component. The sacrificial layer includes a cavity portion disposed about the component and a tunnel portion adjacent to the cavity portion. In addition, an encapsulation layer having a cover portion and a perimeter portion is formed over the sacrificial layer. The cover portion encapsulates the cavity portion such that the cavity portion forms a cavity within the cover portion. The perimeter portion is disposed over the tunnel portion. Moreover, an access hole is formed in the perimeter portion of the encapsulation layer.
  • Insulator Layer Based Mems Devices

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  • US Patent:
    8399333, Mar 19, 2013
  • Filed:
    Apr 29, 2011
  • Appl. No.:
    13/097989
  • Inventors:
    Sangchae Kim - Irvine CA, US
    Tony Ivanov - Summerfield NC, US
    Julio Costa - Oak Ridge NC, US
  • Assignee:
    RF Micro Devices, Inc. - Greensboro NC
  • International Classification:
    H01L 21/20
    H01L 21/02
  • US Classification:
    438396, 438381, 257532
  • Abstract:
    The present invention relates to using an insulator layer between two metal layers of a semiconductor die to provide a micro-electromechanical systems (MEMS) device, such as an ohmic MEMS switch or a capacitive MEMS switch. In an ohmic MEMS switch, the insulator layer may be used to reduce metal undercutting during fabrication, to prevent electrical shorting of a MEMS actuator to a MEMS cantilever, or both. In a capacitive MEMS switch, the insulator layer may be used as a capacitive dielectric between capacitive plates, which are provided by the two metal layers. A fixed capacitive element may be provided by the insulator layer between the two metal layers. In one embodiment of the present invention, an ohmic MEMS switch, a capacitive MEMS switch, a fixed capacitive element, or any combination thereof may be integrated into a single semiconductor die.
  • Package For An Electronic Device

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  • US Patent:
    8636912, Jan 28, 2014
  • Filed:
    Feb 20, 2012
  • Appl. No.:
    13/400355
  • Inventors:
    Sangchae Kim - Huntersville NC, US
    Steven Crist - Charlotte NC, US
  • Assignee:
    RF Micro Devices, Inc. - Greensboro NC
  • International Classification:
    C23F 1/00
    H01L 23/02
  • US Classification:
    216 2, 216 58, 216 83, 438106, 438456, 257416, 257678, 333193, 310313 R
  • Abstract:
    A method of forming a device is provided. A substrate having a component is provided and a sacrificial layer is formed over the component. The sacrificial layer includes a cavity portion disposed about the component and a tunnel portion adjacent to the cavity portion. In addition, an encapsulation layer having a cover portion and a perimeter portion is formed over the sacrificial layer. The cover portion encapsulates the cavity portion such that the cavity portion forms a cavity within the cover portion. The perimeter portion is disposed over the tunnel portion. Moreover, an access hole is formed in the perimeter portion of the encapsulation layer.
  • Composite Sacrificial Structure For Reliably Creating A Contact Gap In A Mems Switch

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  • US Patent:
    20120156820, Jun 21, 2012
  • Filed:
    Dec 20, 2010
  • Appl. No.:
    12/973105
  • Inventors:
    Sangchae Kim - Irvine CA, US
  • Assignee:
    RF MICRO DEVICES, INC. - Greensboro NC
  • International Classification:
    H01L 21/02
  • US Classification:
    438 50, 257E21002
  • Abstract:
    The present Disclosure provides for fabrication devices and methods for manufacturing a micro-electromechanical system (MEMS) switch on a substrate. The MEMS fabrication device may have a first and second sacrificial layer that form the mold of an actuation member. The actuation member is formed over the first and second sacrificial layers to manufacture a MEMS switch from the MEMS fabrication device.
  • Insulator Layer Based Mems Devices

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  • US Patent:
    7956429, Jun 7, 2011
  • Filed:
    Jul 29, 2008
  • Appl. No.:
    12/181356
  • Inventors:
    Sangchae Kim - Huntersville NC, US
    Tony Ivanov - Summerfield NC, US
    Julio Costa - Summerfield NC, US
  • Assignee:
    RF Micro Devices, Inc. - Greensboro NC
  • International Classification:
    H01L 29/84
    H01L 21/00
  • US Classification:
    257415, 257414, 438 50, 438 52, 438 53
  • Abstract:
    The present invention relates to using an insulator layer between two metal layers of a semiconductor die to provide a micro-electromechanicalsystems (MEMS) device, such as an ohmic MEMS switch or a capacitive MEMS switch. In an ohmic MEMS switch, the insulator layer may be used to reduce metal undercutting during fabrication, to prevent electrical shorting of a MEMS actuator to a MEMS cantilever, or both. In a capacitive MEMS switch, the insulator layer may be used as a capacitive dielectric between capacitive plates, which are provided by the two metal layers. A fixed capacitive element may be provided by the insulator layer between the two metal layers. In one embodiment of the present invention, an ohmic MEMS switch, a capacitive MEMS switch, a fixed capacitive element, or any combination thereof may be integrated into a single semiconductor die.

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