Satish Yeldandi

US Patent:

20150137353, May 21, 2015

Filed:

Nov 19, 2013

Appl. No.:

14/084037

Inventors:

- Boise ID, US
Jaspreet S. Gandhi - Boise ID, US
Christopher J. Gambee - Caldwell ID, US
Satish Yeldandi - Boise ID, US

Assignee:

MICRON TECHNOLOGY, INC. - Boise ID

International Classification:

H01L 23/00
H01L 23/48

US Classification:

257737, 438614

Abstract:

The present technology is directed to manufacturing semiconductor dies with under-bump metal (UBM) structures for die-to-die and/or package-to-package interconnects or other types of interconnects. In one embodiment, a method for forming under-bump metal (UBM) structures on a semiconductor die comprises constructing a UBM pillar by plating a first material onto first areas of a seed structure and depositing a second material over the first material. The first material has first electrical potential and the second material has a second electrical potential greater than the first electrical potential. The method further comprises reducing the difference in the electrical potential between the first material and the second material, and then removing second areas of the seed structure between the UBM pillars thereby forming UBM structures on the semiconductor die.