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Scott R Chegwidden

age ~53

from Mountain View, CA

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Also known as:
  • Scott Raymond Chegwidden
  • Scott Te Chegwidden
  • Scott R Jepsen
  • Scott Chagwidden
Phone and address:
300 Chatham Way, Mountain View, CA 94040
(650)9642434
Related to:
Connected to:

Scott Chegwidden Phones & Addresses

  • 300 Chatham Way, Mountain View, CA 94040 • (650)9642434
  • 910 Bush St, Mountain View, CA 94041 • (650)9642434
  • Seattle, WA
  • San Jose, CA
  • Santa Clara, CA
  • Berkeley, CA
  • 300 Chatham Way, Mountain View, CA 94040

Work

  • Position:
    Senior process engineer

Education

  • Degree:
    High school graduate or higher

Us Patents

  • Dual-Layer Euv Mask Absorber With Trenches Having Opposing Sidewalls That Are Straight And Parallel

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  • US Patent:
    7410733, Aug 12, 2008
  • Filed:
    Jun 3, 2005
  • Appl. No.:
    11/144550
  • Inventors:
    Hsing-Chien Ma - Fremont CA, US
    Scott R. Chegwidden - Mountain View CA, US
  • Assignee:
    Intel Corporation - Santa Clara CA
  • International Classification:
    G03F 1/00
  • US Classification:
    430 5
  • Abstract:
    A composite extreme ultraviolet light (EUV) mask absorber structure and method are disclosed to address the structural and processing requirements of EUV lithography. A first mask absorber layer anisotropically etched with minimal etch bias at a relatively fast etch rate, is combined with a highly-selective second mask absorber layer, to produce a mask absorber with desirable hybrid performance properties.

  • Double-Metal Euv Mask Absorber

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  • US Patent:
    20040124174, Jul 1, 2004
  • Filed:
    Dec 28, 2002
  • Appl. No.:
    10/334177
  • Inventors:
    Hsing-Chien Ma - Fremont CA, US
    Scott Chegwidden - Mountain View CA, US
  • International Classification:
    C03C025/68
  • US Classification:
    216/054000
  • Abstract:
    A composite extreme ultraviolet light (EUV) mask absorber structure and method are disclosed to address the structural and processing requirements of EUV lithography. A first mask absorber layer anisotropically etched with minimal etch bias at a relatively fast etch rate, is combined with a highly-selective second mask absorber layer, to produce a mask absorber with desirable hybrid performance properties.

Resumes

Scott Chegwidden Photo 1

Senior Process Engineer

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Location:
Mountain View, CA
Work:

Senior Process Engineer

Youtube

Bearsharks of 2009 Dining Out Video

Bearsharks of 2009 Dining Out Video

This is the video slide show for the 25th company dining out.

  • Category:
    Entertainment
  • Uploaded:
    13 Apr, 2008
  • Duration:
    5m 40s

Mylife

Scott Chegwidden Photo 2

Scott Chegwidden Mountai...

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Scott Chegwidden s

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