Scott S Dunham

US Patent:

6616766, Sep 9, 2003

Filed:

Dec 30, 2002

Appl. No.:

10/335404

Inventors:

Scott William Dunham - Fremont CA

Assignee:

Genus, Inc. - Sunnyvale CA

International Classification:

C23C 1600

US Classification:

118715, 2391323, 239132, 239424, 438758

Abstract:

A showerhead diffuser apparatus for a CVD process has a first channel region having first plural independent radially-concentric channels and individual gas supply ports from a first side of the apparatus to individual ones of the first channels, a second channel region having second plural independent radially-concentric channels and a pattern of diffusion passages from the second channels to a second side of the apparatus, and a transition region between the first channel region and the second channel region having at least one transition gas passage for communicating gas from each first channel in the first region to a corresponding second channel in the second region. The showerhead apparatus has a vacuum seal interface for mounting the showerhead apparatus to a CVD reactor chamber such that the first side and supply ports face away from the reactor chamber and the second side and the patterns of diffusion passages from the second channels open into the reactor chamber. In preferred embodiments the supply ports, transition passages, and diffusion passages into the chamber do not align, and there is a special plasma-quenching ring in each of the second channels preventing plasma ignition within the channels in the showerhead methods and systems using the showerhead are also taught.

US Patent:

6626998, Sep 30, 2003

Filed:

Nov 8, 2000

Appl. No.:

09/709228

Inventors:

Scott William Dunham - Fremont CA

Assignee:

Genus, Inc. - Sunnyvale CA

International Classification:

C23C 1600

US Classification:

118723, 118715, 118723 R

Abstract:

An RF electrode module for use with a gas-diffuser showerhead device in a CVD chamber has an electrically-conductive electrode ring with a ring, inside diameter (R-ID) and a ring outside diameter (R-OD). The ring has an upwardly-extending power post, and an internal water-cooling channel open to an upwardly extending inlet tube and an upwardly-extending outlet tube, the post and tubes parallel to a central axis of the ring. There is further an electrical-insulator ring having an insulator outside diameter (I-OD) equal to or greater than the R-OD and an insulator inside diameter (I-ID) equal to or smaller than the R-ID, and through-openings extending in the direction of the central axis of the ring and spaced such that the power post, inlet tube, and outlet tube extend through the through-openings in the insulator ring. In a preferred embodiment the I-ID is sized to engage a shoulder diameter of the gas diffuser showerhead device. The disclosure also teaches a split nut for providing a secure and removable connection of a fluid-supply apparatus to a tube in a manner to withstand substantial internal fluid pressure.

US Patent:

7018940, Mar 28, 2006

Filed:

Sep 4, 2003

Appl. No.:

10/655682

Inventors:

Scott William Dunham - Fremont CA, US

Assignee:

Genus, Inc. - Sunnyvale CA

International Classification:

H01L 21/30
C23C 16/00
B05B 1/24

US Classification:

438758, 427 99, 4272551, 118715, 2391323, 239132, 239424

Abstract:

A showerhead diffuser apparatus for a CVD process has a first channel region having first plural independent radially-concentric channels and individual gas supply ports from a first side of the apparatus to individual ones of the first channels, a second channel region having second plural independent radially-concentric channels and a pattern of diffusion passages from the second channels to a second side of the apparatus, and a transition region between the first channel region and the second channel region having at least one transition gas passage for communicating gas from each first channel in the first region to a corresponding second channel in the second region. The showerhead apparatus has a vacuum seal interface for mounting the showerhead apparatus to a CVD reactor chamber such that the first side and supply ports face away from the reactor chamber and the second side and the patterns of diffusion passages from the second channels open into the reactor chamber. In preferred embodiments the supply ports, transition passages, and diffusion passages into the chamber do not align, and there is a special plasma-quenching ring in each of the second channels preventing plasma ignition within the channels in the showerhead methods and systems using the showerhead are also taught.

US Patent:

20010054391, Dec 27, 2001

Filed:

Aug 23, 2001

Appl. No.:

09/939272

Inventors:

Scott Dunham - Fremont CA, US

International Classification:

H01L021/31
H01L021/469
C23C016/00

US Classification:

118/733000, 438/788000, 438/792000, 118/715000

Abstract:

A showerhead diffuser apparatus for a CVD process has a first channel region having first plural independent radially-concentric channels and individual gas supply ports from a first side of the apparatus to individual ones of the first channels, a second channel region having second plural independent radially-concentric channels and a pattern of diffusion passages from the second channels to a second side of the apparatus, and a transition region between the first channel region and the second channel region having at least one transition gas passage for communicating gas from each first channel in the first region to a corresponding second channel in the second region. The showerhead apparatus has a vacuum seal interface for mounting the showerhead apparatus to a CVD reactor chamber such that the first side and supply ports face away from the reactor chamber and the second side and the patterns of diffusion passages from the second channels open into the reactor chamber. In preferred embodiments the supply ports, transition passages, and diffusion passages into the chamber do not align, and there is a special plasma-quenching ring in each of the second channels preventing plasma ignition within the channels in the showerhead. methods and systems using the showerhead are also taught.

US Patent:

62069721, Mar 27, 2001

Filed:

Jul 8, 1999

Appl. No.:

9/350417

Inventors:

Scott William Dunham - Fremont CA

Assignee:

Genus, Inc. - Sunnyvale CA

International Classification:

C23C16/00
7
B05B1/24

US Classification:

118715

Abstract:

A showerhead diffuser apparatus for a CVD process has a first channel region having first plural independent radially-concentric channels and individual gas supply ports from a first side of the apparatus to individual ones of the first channels, a second channel region having second plural independent radially-concentric channels and a pattern of diffusion passages from the second channels to a second side of the apparatus, and a transition region between the first channel region and the second channel region having at least one transition gas passage for communicating gas from each first channel in the first region to a corresponding second channel in the second region. The showerhead apparatus has a vacuum seal interface for mounting the showerhead apparatus to a CVD reactor chamber such that the first side and supply ports face away from the reactor chamber and the second side and the patterns of diffusion passages from the second channels open into the reactor chamber. In preferred embodiments the supply ports, transition passages, and diffusion passages into the chamber do not align, and there is a special plasma-quenching ring in each of the second channels preventing plasma ignition within the channels in the showerhead. Methods and systems using the showerhead are also taught.

US Patent:

62846736, Sep 4, 2001

Filed:

Jan 24, 2001

Appl. No.:

9/769634

Inventors:

Scott William Dunham - Fremont CA

Assignee:

Genus Inc. - Sunnyvale CA

International Classification:

H01L 2131
H01L 2126
C23C 800

US Classification:

438758

Abstract:

A showerhead diffuser apparatus for a CVD process has a first channel region having first plural independent radially-concentric channels and individual gas supply ports from a first side of the apparatus to individual ones of the first channels, a second channel region having second plural independent radially-concentric channels and a pattern of diffusion passages from the second channels to a second side of the apparatus, and a transition region between the first channel region and the second channel region having at least one transition gas passage for communicating gas from each first channel in the first region to a corresponding second channel in the second region. The showerhead apparatus has a vacuum seal interface for mounting the showerhead apparatus to a CVD reactor chamber such that the first side and supply ports face away from the reactor chamber and the second side and the patterns of diffusion passages from the second channels open into the reactor chamber. In preferred embodiments the supply ports, transition passages, and diffusion passages into the chamber do not align, and there is a special plasma-quenching ring in each of the second channels preventing plasma ignition within the channels in the showerhead methods and systems using the showerhead are also taught.

US Patent:

20160225608, Aug 4, 2016

Filed:

Jan 28, 2016

Appl. No.:

15/008663

Inventors:

- Herzogenrath, DE
Shahab Khandan - Pleasanton CA, US
Scott Dunham - Fremont CA, US
Tac van Huynh - Fremont CA, US
Kenneth B.K. Teo - Great Cambourne, GB

Assignee:

AIXTRON - Herzogenrath

International Classification:

H01L 21/02
H01L 21/67

Abstract:

Provided is a method of epitaxial deposition, which involves dry-etching a semiconductor substrate with a fluorine containing species and exposing the dry-etched substrate to hydrogen atoms, prior to epitaxially depositing a semiconductor layer to the surface of the substrate.