Scott A Mcpherson

US Patent:

6483130, Nov 19, 2002

Filed:

Mar 24, 1999

Appl. No.:

09/275632

Inventors:

Wei X. Yang - Minnetonka MN
Thomas E. Nohava - Apple Valley MN
Scott A. McPherson - Eagan MN
Robert C. Torreano - Coon Rapids MN
Subash Krishnankutty - Minneapolis MN
Holly A. Marsh - St. Louis Park MN

Assignee:

Honeywell International Inc. - Morristown NJ

International Classification:

H01L 310304

US Classification:

257189, 257184, 257201, 257458

Abstract:

A p-i-n photodiode having a high responsivity and quantum efficiency due to an AlGaN heterojunction where photons are absorbed within the p-n junction thereby eliminating carrier losses due to surface recombination and diffusion processes. Ultraviolet light comes through a transparent substrate, such as sapphire, a transparent AlN buffer and an n-doped AlGaN layer, and to an undoped AlGaN layer where the light is absorbed. The undoped layer is sandwiched between the n-doped AlGaN layer and a p-doped AlGaN layer. Metal contacts are formed on the doped layers to obtain the current caused by the absorbed light in the undoped layer. The mole fractions of the Al and Ga in the undoped and doped layers may be adjusted to obtain a desired wavelength bandpass of light to be detected.

US Patent:

61371238, Oct 24, 2000

Filed:

Aug 17, 1999

Appl. No.:

9/376114

Inventors:

Wei Yang - Minnetonka MN
Thomas E. Nohava - Apple Valley MN
Scott A. McPherson - Eagan MN
Robert C. Torreano - Coon Rapids MN
Holly A. Marsh - St. Louis Park MN
Subash Krishnankutty - Minneapolis MN

Assignee:

Honeywell International Inc. - Morristown NJ

International Classification:

H01L 310328
H01L 310336
H01L 31072
H01L 31109

US Classification:

257184

Abstract:

A GaN/AlGaN heterojunction bipolar phototransistor having AlGaN contact, i-GaN absorbing, p-GaN base and n-GaN emitter layers formed, in that order, on a UV transparent substrate. The phototransistor has a gain greater than 10. sup. 5. From 360 nm to 400 nm, eight orders of magnitude drop in responsivity was achieved. The phototransistor features a rapid electrical quenching of persistent photoconductivity, and exhibits high dark impedance and no DC drift. By changing the frequency of the quenching cycles, the detection speed of the phototransistor can be adjusted to accommodate specific applications. These results represent an internal gain UV detector with significantly improved performance over GaN based photo conductors.

US Patent:

56835949, Nov 4, 1997

Filed:

Mar 24, 1994

Appl. No.:

8/217044

Inventors:

G. Benjamin Hocker - Minnetonka MN
David W. Burns - Minneapolis MN
Akintunde I. Akinwande - Bloomington MN
Robert D. Horning - Burnsville MN
Amir R. Mirza - Golden Valley MN
Thomas G. Stratton - Roseville MN
Deidrich J. Saathoff - Burnsville MN
James K. Carney - Eden Prairie MN
Scott A. McPherson - Eagan MN

Assignee:

Honeywell, Inc. - Minneapolis MN

International Classification:

B32B 3100

US Classification:

216 33

Abstract:

This patent relates to the fabrication of diaphragm-based microstructures used primarily for sensing physical phenomena by detecting a change in deflection, resonance, or curvature of the diaphragm. The methods of fabrication described and claimed herein relate primarily to diaphragm-based diaphragms made of silicon, either single crystal or polycrystalline in form, although other materials may be used.

US Patent:

52953955, Mar 22, 1994

Filed:

Feb 7, 1991

Appl. No.:

7/652148

Inventors:

G. Benjamin Hocker - Minnetonka MN
David W. Burns - Minneapolis MN
Akintunde I. Akinwande - Bloomington MN
Robert D. Horning - Burnsville MN
Amir R. Mirza - Golden Valley MN
Thomas G. Stratton - Roseville MN
Deidrich J. Saathoff - Burnsville MN
James K. Carney - Eden Prairie MN
Scott A. McPherson - Eagan MN

International Classification:

G01L 1302

US Classification:

73721

Abstract:

The formation of diaphragms by silicon wafer bonding provides for a structure having at least two such diaphragms with cavities in the wafers to which the diaphragm layer is bonded. Passageways through the wafers provide for communication of a fluid to the diaphragms. In some locations less than all of a plurality of diaphragms may be bonded to only one wafter having a cavity adjacent the diaphragm.

US Patent:

59239530, Jul 13, 1999

Filed:

Jan 27, 1997

Appl. No.:

8/789036

Inventors:

Barbara Goldenberg Barany - Falcon Heights MN
Scott A. McPherson - Eagan MN
Scott T. Reimer - Otsego MN
Robert P. Ulmer - Hopkins MN
J. David Zook - Minneapolis MN
Maurice L. Hitchell - late of Lakeville MN

Assignee:

Honeywell Inc. - Minneapolis MN

International Classification:

H01L 2102

US Classification:

438 93

Abstract:

A process for forming a UV sensitive gallium nitride layer includes a step of depositing a layer of aluminum nitride on which the gallium nitride layer is deposited. Two tests, sheet resistance and photoluminescent response of the gallium nitride layer, allow one to determine that a particular gallium nitride layer produced by the process will have the required response to UV radiation. Either a careful calibration which determines a required length of the aluminum nitride deposition time, or the introduction of silicon into the gallium nitride layer during its deposition, has been found to result in deposit of a gallium nitride layer which has superior UV sensing characteristics.

US Patent:

20210322469, Oct 21, 2021

Filed:

Apr 20, 2021

Appl. No.:

17/235518

Inventors:

- Minneapolis MN, US
Scott W. McPherson - Edina MN, US

International Classification:

A61K 33/34
A61K 31/375
A61K 31/355
A61K 31/047
A61K 9/00
A61K 33/30

Abstract:

This disclosure describes methods for prophylaxis and treatment of coronavirus in vulnerable populations and infected individuals. The methods include the administration of zinc and in some embodiments copper. In some embodiments, an amount of zinc is administered sufficient to raise serum zinc levels to 60 μg/dL. In some aspects, the coronavirus is the SARS-CoV-2 virus and/or the infection is COVID-19.