Scott N Sheppard
age ~34
from Germantown, TN
- Also known as:
-
- Scott Nelson Sheppard
- Sean Gregory Sheppard
- Sean G Sheppard
- Scott S Heppard
Scott Sheppard Phones & Addresses
- Germantown, TN
- San Diego, CA
- 800 Crawford St, Portsmouth, VA 23704
- Columbia, SC
- 6204 Tilden Park Dr, Raleigh, NC 27612
- Fuquay Varina, NC
- Holly Springs, NC
- 7821 S Nevada Dr, Raleigh, NC 27616 • (919)8502378
Work
-
Position:Precision Production Occupations
Education
-
Degree:Associate degree or higher
Wikipedia References
Scott S . Sheppard
Work:
Position:
Astronomer
Education:
Starting as a graduate student at the Institute for Astronomy at the University of Hawaii, he was credited with the discovery of many small moons of Jupiter, Saturn, Uranus, and Neptune.
Skills & Activities:
Master status:
Student
Name / Title
Company / Classification
Phones & Addresses
BUSINESS INTELLIGENCE GROUP, INC
License Records
Scott A Sheppard
License #:
7099 - Active
Category:
Tow Truck Operator (Incident Management)
Expiration Date:
Sep 9, 2017
Scott A Sheppard
License #:
919 - Active
Category:
VSF Employee
Expiration Date:
Jul 25, 2017
Scott Franklin Sheppard
License #:
MT028951T - Expired
Category:
Medicine
Type:
Graduate Medical Trainee
Resumes
Commercial Credit Supervisor
view sourceLocation:
Germantown, TN
Industry:
Automotive
Work:
Ford Motor Credit Company - Greater Nashville Area since Apr 2011
Commercial Credit Supervisor
Ford Motor Credit Company Aug 2008 - Apr 2011
Auditing Operations Manager
Ford Motor Credit Co. Mar 2007 - Aug 2008
Quality Assurance Specialist
Ford Motor Credit Co. Jun 1998 - 2007
Regional Credit Analyst
Ford Motor Credit Company Nov 1989 - Jun 1998
Dealer Services Supervisor
Commercial Credit Supervisor
Ford Motor Credit Company Aug 2008 - Apr 2011
Auditing Operations Manager
Ford Motor Credit Co. Mar 2007 - Aug 2008
Quality Assurance Specialist
Ford Motor Credit Co. Jun 1998 - 2007
Regional Credit Analyst
Ford Motor Credit Company Nov 1989 - Jun 1998
Dealer Services Supervisor
Education:
Memphis State University 1983 - 1989
Skills:
Commercial Real Estate
Financial Structuring
Financial Analysis
Credit
Credit Analysis
Training
Financial Risk
Finance
Portfolio Management
Management
Underwriting
Process Improvement
Operations Management
Credit Risk
Risk Management
Sales
Commercial Lending
Customer Satisfaction
Business Analysis
Loans
Relationship Management
Auditing
Banking
Consumer Lending
Forecasting
Analysis
Business Planning
Business Process Improvement
Financial Structuring
Financial Analysis
Credit
Credit Analysis
Training
Financial Risk
Finance
Portfolio Management
Management
Underwriting
Process Improvement
Operations Management
Credit Risk
Risk Management
Sales
Commercial Lending
Customer Satisfaction
Business Analysis
Loans
Relationship Management
Auditing
Banking
Consumer Lending
Forecasting
Analysis
Business Planning
Business Process Improvement
Interests:
Green Bay Packers
Harry Potter
Angry Birds (Game)
Hewlett Packard
The Lord of the Rings
Tv and Creative Franchise
Deadliest Catch
New York Giants
Rush (Band)
Tennessee Titans
Movies and Creative Franchise
The Matrix (1999 Movie)
Amazon
Firefly (Tv Series)
The Big Bang Theory (Tv Series)
Bush
The Next Generation
Star Trek
George W
Royal Caribbean
Rms Titanic (Ship)
Harry Potter
Angry Birds (Game)
Hewlett Packard
The Lord of the Rings
Tv and Creative Franchise
Deadliest Catch
New York Giants
Rush (Band)
Tennessee Titans
Movies and Creative Franchise
The Matrix (1999 Movie)
Amazon
Firefly (Tv Series)
The Big Bang Theory (Tv Series)
Bush
The Next Generation
Star Trek
George W
Royal Caribbean
Rms Titanic (Ship)
Scott Sheppard
view source
Professional Investigator
view sourceWork:
Professional Investigator
Scott Sheppard
view source
Scott Sheppard
view source
Scott Sheppard
view source
Scott Sheppard
view sourceLocation:
United States
Medicine Doctors
Scott F. Sheppard
view sourceSpecialties:
Orthopaedic Surgery
Work:
Workwell Inc
1187 Thorn Run Rd STE 120, Coraopolis, PA 15108
(800)6622400 (phone), (412)2795394 (fax)
1187 Thorn Run Rd STE 120, Coraopolis, PA 15108
(800)6622400 (phone), (412)2795394 (fax)
Education:
Medical School
University of Michigan Medical School
Graduated: 1992
University of Michigan Medical School
Graduated: 1992
Languages:
English
Description:
Dr. Sheppard graduated from the University of Michigan Medical School in 1992. He works in Coraopolis, PA and specializes in Orthopaedic Surgery.
Scott Franklin Sheppard
view sourceSpecialties:
Neuromusculoskeletal Medicine & OMM
Amazon
William Willya and the Birthday Cake
view sourceChildren of all ages love William Willya! Pre-schoolers (2-4) are captivated by Sheppard's colorful illustrations and Masland's lively rhymes; Early Readers (4-6) benefit from the big, bold type and easy-to-read words; and older Elementary School Kids (7-9) are some of the book's most enthusiastic f...
Author
Skip Masland
Binding
Hardcover
Publisher
Moonglow Pubns
ISBN #
1883016045
EAN Code
9781883016043
ISBN #
6
William Willya and the Washing Machine
view sourceChildren of all ages love William Willya! Pre-schoolers (2-4) are captivated by Sheppard's colorful illustrations and Masland's lively rhymes; Early Readers (4-6) benefit from the big, bold type and easy-to-read words; and older Elementary School Kids (7-9) are some of the book's most enthusiastic f...
Author
Skip Masland
Binding
Hardcover
Publisher
Moonglow Publishing
ISBN #
1883016010
EAN Code
9781883016012
ISBN #
2
When the Husband is the Suspect: From Sam Sheppard to Scott Peterson - the Publi
view sourceBinding
Unknown Binding
Publisher
FORGE
ISBN #
9
Us Patents
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Semiconductor Component With Foreign Atoms Introduced By Ion Implantation And Process For Producing The Same
view source -
US Patent:6429459, Aug 6, 2002
-
Filed:Apr 17, 1998
-
Appl. No.:09/051716
-
Inventors:Wolfgang Wondrak - Frankfurt, DE
Vera Lauer - Griesheim, DE
Nando Kaminski - Moerfelden-Walldorf, DE
Raban Held - Moembris, DE
Gerhard Pensl - Herzogenaurach, DE
Scott T. Sheppard - Durham NC -
Assignee:DaimlerChrysler AG - Stuttgart
-
International Classification:H01L 310312
-
US Classification:257 77, 438530
-
Abstract:A semiconductor component having impurity atoms introduced by implantation which are subsequently electrically activated by way of an annealing process. Immediately after the annealing process, the component has a mean surface roughness of less than 15 nm and at least 10% of the implanted impurity atoms are electrically activated.
-
High Voltage, High Temperature Capacitor And Interconnection Structures
view source -
US Patent:6972436, Dec 6, 2005
-
Filed:Jun 11, 2001
-
Appl. No.:09/878442
-
Inventors:Mrinal Kanti Das - Durham NC, US
Lori A. Lipkin - Raleigh NC, US
John W. Palmour - Raleigh NC, US
Scott Sheppard - Chapel Hill NC, US
Helmut Hagleitner - Zebulon NC, US -
Assignee:Cree, Inc. - Durham NC
-
International Classification:H01L031/0312
H01L029/76 -
US Classification:257 77, 257760, 257763, 257532, 257411
-
Abstract:Capacitors and interconnection structures for silicon carbide are provided having an oxide layer, a layer of dielectric material and a second oxide layer on the layer of dielectric material. The thickness of the oxide layers may be from about 0. 5 to about 33 percent of the thickness of the oxide layers and the layer of dielectric material. Capacitors and interconnection structures for silicon carbide having silicon oxynitride layer as a dielectric structure are also provided. Such a dielectric structure may be between metal layers to provide a metal-insulator-metal capacitor or may be used as a inter-metal dielectric of an interconnect structure so as to provide devices and structures having improved mean time to failure. Methods of fabricating such capacitors and structures are also provided.
-
Nitride-Based Transistors And Methods Of Fabrication Thereof Using Non-Etched Contact Recesses
view source -
US Patent:6982204, Jan 3, 2006
-
Filed:Jul 11, 2003
-
Appl. No.:10/617843
-
Inventors:Adam William Saxler - Durham NC, US
Richard Peter Smith - Carrboro NC, US
Scott T. Sheppard - Chapel Hill NC, US -
Assignee:Cree, Inc. - Durham NC
-
International Classification:H01L 21/336
-
US Classification:438285
-
Abstract:Contacts for a nitride based transistor and methods of fabricating such contacts provide a recess through a regrowth process. The contacts are formed in the recess. The regrowth process includes fabricating a first cap layer comprising a Group III-nitride semiconductor material. A mask is fabricated and patterned on the first cap layer. The pattern of the mask corresponds to the pattern of the recesses for the contacts. A second cap layer comprising a Group III-nitride semiconductor material is selectively fabricated (e. g. grown) on the first cap layer utilizing the patterned mask. Additional layers may also be formed on the second cap layer. The mask may be removed to provide recess(es) to the first cap layer, and contact(s) may be formed in the recess(es). Alternatively, the mask may comprise a conductive material upon which a contact may be formed, and may not require removal.
-
Methods Of Fabricating High Voltage, High Temperature Capacitor And Interconnection Structures
view source -
US Patent:6998322, Feb 14, 2006
-
Filed:Mar 6, 2003
-
Appl. No.:10/382826
-
Inventors:Mrinal Kanti Das - Durham NC, US
Lori A. Lipkin - Raleigh NC, US
John W. Palmour - Raleigh NC, US
Scott Sheppard - Chapel Hill NC, US
Helmut Hagleitner - Zebulon NC, US -
Assignee:Cree, Inc. - Durham NC
-
International Classification:H01L 21/20
H01L 21/4763 -
US Classification:438393, 438396, 438624
-
Abstract:Capacitors and interconnection structures for silicon carbide are provided having an oxide layer, a layer of dielectric material and a second oxide layer on the layer of dielectric material. The thickness of the oxide layers may be from about 0. 5 to about 33 percent of the thickness of the oxide layers and the layer of dielectric material. Capacitors and interconnection structures for silicon carbide having silicon oxynitride layer as a dielectric structure are also provided. Such a dielectric structure may be between metal layers to provide a metal-insulator-metal capacitor or may be used as a inter-metal dielectric of an interconnect structure so as to provide devices and structures having improved mean time to failure. Methods of fabricating such capacitors and structures are also provided.
-
Method Of Forming Vias In Silicon Carbide And Resulting Devices And Circuits
view source -
US Patent:7125786, Oct 24, 2006
-
Filed:Feb 25, 2005
-
Appl. No.:11/067543
-
Inventors:Zoltan Ring - Durham NC, US
Scott Sheppard - Chapel Hill NC, US
Helmut Hagleitner - Zebulon NC, US -
Assignee:Cree, Inc. - Durham NC
-
International Classification:H01L 21/44
-
US Classification:438571, 438716, 438707, 438712, 438730, 438740, 257E21603, 257E31049, 257E29104, 257E21182
-
Abstract:A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating a semiconductor device in epitaxial layers on a surface of a silicon carbide substrate and with at least one metal contact for the device on the uppermost surface of the epitaxial layer. The opposite surface of the substrate is then ground and polished until it is substantially transparent. The method then includes masking the polished surface of the silicon carbide substrate to define a predetermined location for at least one via that is opposite the device metal contact on the uppermost surface of the epitaxial layer and etching the desired via in steps. The first etching step etches through the silicon carbide substrate at the desired masked location until the etch reaches the epitaxial layer. The second etching step etches through the epitaxial layer to the device contacts.
-
Transistors Having Buried N-Type And P-Type Regions Beneath The Source Region
view source -
US Patent:7456443, Nov 25, 2008
-
Filed:Nov 23, 2004
-
Appl. No.:10/996249
-
Inventors:Adam William Saxler - Durham NC, US
Scott Sheppard - Chapel Hill NC, US
Richard Peter Smith - Carrboro NC, US -
Assignee:Cree, Inc. - Durham NC
-
International Classification:H01L 21/00
H01L 29/74 -
US Classification:257194, 257219, 257234, 438157, 438172
-
Abstract:High electron mobility transistors are provided that include a non-uniform aluminum concentration AlGaN based cap layer having a high aluminum concentration adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. High electron mobility transistors are provided that include a cap layer having a doped region adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. Graphitic BN passivation structures for wide bandgap semiconductor devices are provided. SiC passivation structures for Group III-nitride semiconductor devices are provided. Oxygen anneals of passivation structures are also provided. Ohmic contacts without a recess are also provided.
-
Passivation Of Wide Band-Gap Based Semiconductor Devices With Hydrogen-Free Sputtered Nitrides
view source -
US Patent:7525122, Apr 28, 2009
-
Filed:Jun 29, 2005
-
Appl. No.:11/169378
-
Inventors:Zoltan Ring - Durham NC, US
Helmut Hagleitner - Zebulon NC, US
Jason Patrick Henning - Carrboro NC, US
Andrew Mackenzie - Cary NC, US
Scott Allen - Apex NC, US
Scott Thomas Sheppard - Chapel Hill NC, US
Richard Peter Smith - Carrboro NC, US
Saptharishi Sriram - Cary NC, US
Allan Ward, III - Durham NC, US -
Assignee:Cree, Inc. - Durham NC
-
International Classification:H01L 29/15
H01L 31/0256 -
US Classification:257 76, 257 99, 257E29104
-
Abstract:A passivated semiconductor structure and associated method are disclosed. The structure includes a silicon carbide substrate or layer; an oxidation layer on the silicon carbide substrate for lowering the interface density between the silicon carbide substrate and the thermal oxidation layer; a first sputtered non-stoichiometric silicon nitride layer on the thermal oxidation layer for reducing parasitic capacitance and minimizing device trapping; a second sputtered non-stoichiometric silicon nitride layer on the first layer for positioning subsequent passivation layers further from the substrate without encapsulating the structure; a sputtered stoichiometric silicon nitride layer on the second sputtered layer for encapsulating the structure and for enhancing the hydrogen barrier properties of the passivation layers; and a chemical vapor deposited environmental barrier layer of stoichiometric silicon nitride for step coverage and crack prevention on the encapsulant layer.
-
Nitride-Based Transistors And Methods Of Fabrication Thereof Using Non-Etched Contact Recesses
view source -
US Patent:7550784, Jun 23, 2009
-
Filed:Sep 7, 2005
-
Appl. No.:11/221343
-
Inventors:Adam William Saxler - Durham NC, US
Richard Peter Smith - Carrboro NC, US
Scott T. Sheppard - Chapel Hill NC, US -
Assignee:Cree, Inc. - Durham NC
-
International Classification:H01L 29/775
-
US Classification:257194, 257192, 257E29246, 257E29248, 257E29249, 257E29253, 257 12
-
Abstract:Contacts for a nitride based transistor and methods of fabricating such contacts provide a recess through a regrowth process. The contacts are formed in the recess. The regrowth process includes fabricating a first cap layer comprising a Group III-nitride semiconductor material. A mask is fabricated and patterned on the first cap layer. The pattern of the mask corresponds to the pattern of the recesses for the contacts. A second cap layer comprising a Group III-nitride semiconductor material is selectively fabricated (e. g. grown) on the first cap layer utilizing the patterned mask. Additional layers may also be formed on the second cap layer. The mask may be removed to provide recess(es) to the first cap layer, and contact(s) may be formed in the recess(es). Alternatively, the mask may comprise a conductive material upon which a contact may be formed, and may not require removal.
Wikipedia
Scott S. Sheppard
view sourceScott S. Sheppard is an astronomer in the Department of Terrestrial Magnetism at the Carnegie Institution for Science in Washington, DC. He attended Oberlin...
ISBN #
13
Scott S. Sheppard
view sourceScott S. Sheppard is an astronomer in the Department of Terrestrial Magnetism at the Carnegie Institution for Science. Starting as a graduate student at the...
ISBN #
2
Lawyers & Attorneys
Myspace
Plaxo
Scott Sheppard
view sourceIndianapolis, INI'm in inside sales for Utility-Peterbilt of Indianapolis. I sell new and used trucks. I have a long background in the transportation industry as a driver, as a... I'm in inside sales for Utility-Peterbilt of Indianapolis. I sell new and used trucks. I have a long background in the transportation industry as a driver, as a heavy duty wrecker operator, heavy machinery hauler, and other areas mostly in the vocational fields. I have also managed a transport...
Scott Sheppard
view sourceScottsdale, AZScott is currently a Program Manager for Autodesk Labs. In October of 2009 he relocated back to the Bay Area and now works at One Market Street in San... Scott is currently a Program Manager for Autodesk Labs. In October of 2009 he relocated back to the Bay Area and now works at One Market Street in San Francisco. Scott earned his undergraduate degree in Computer Science from the University of Louisiana at Lafayette (anyone remember Honeywell...
Scott Sheppard
view source
Scott Sheppard
view sourceFranklin, TN
News
If Planet Nine is out there, this telescope might actually find it
view source- The observatory will be a game-changer in the hunt for Planet 9, agrees Scott Sheppard of Carnegie Science, one of the researchers who first suggested that a big planet could be the culprit that was messing with the orbits of some small solar system bodies.
- Date: Apr 09, 2025
- Category: Science
- Source: Google
'Planet killer' asteroids are hiding in the sun's glare. Can we stop them in time?
view source- "Aten asteroids are the most dangerous, because they cross Earth's orbit just barely at their most distant point," Scott Sheppard, a staff scientist at the Carnegie Institution for Science, told Live Science. "You would never see one coming, to some degree, because they're never in the darkness of t
- Date: Nov 12, 2023
- Category: Science
- Source: Google
Saturn’s Rings May Have Formed in a Surprisingly Recent Crash of 2 Moons
view source- y aid scientists in studying not only the genesis of Saturns rings, but of all worlds. With its myriad satellites, Saturn can be considered a mini-solar system, said Scott Sheppard, an astronomer at the Carnegie Institution for Science in Washington, who was not involved with the new study. Saturn
- Date: Sep 30, 2023
- Category: Science
- Source: Google
20 new moons were just discovered orbiting Saturn, and you can help name them
view source- "Using some of the largest telescopes in the world, we are now completing the inventory of small moons around the giant planets," Scott Sheppard, a Carnegie astronomer who led the discovery team, said in a press release. "They play a crucial role in helping us determine how our solar system's planet
- Date: Oct 07, 2019
- Category: Science
- Source: Google
Discovery of new object supports theory of 'super-Earth' at edge of solar system
view source- "We think the big object is between 500 to 1,000 astronomical units away. And we think it's at its most distant point on its elongated orbit, so it's very far away," said Scott Sheppard, co-author of the paper in The Astronomical Journal and astronomer at the Carnegie Institution for Science.
- Date: Oct 02, 2018
- Category: Headlines
- Source: Google
New dwarf planet spotted at the very fringe of our solar system
view source- The Goblin is about 300 kilometers in diameter, on the small end of a dwarf planet, said Scott Sheppard, an astronomer at the Carnegie Institution for Science in Washington who discovered the object along with colleagues at Northern Arizona University, University of Hawaii and the University of Ok
- Date: Oct 02, 2018
- Category: Headlines
- Source: Google
Newfound Dwarf Planet 'The Goblin' May Lead to Mysterious Planet Nine
view source- "These distant objects are like breadcrumbs leading us to Planet X," study leader Scott Sheppard, of the Carnegie Institution for Science in Washington, D.C., said in a statement. [The Evidence for 'Planet Nine' in Our Solar System (Gallery)]
- Date: Oct 02, 2018
- Category: Headlines
- Source: Google
Is there a mysterious Planet Nine lurking in our solar system beyond Neptune?
view source- the outermost reaches of the solar system followed suspiciously similar paths around the sun. If things are in the same orbit, then somethings pushing them, said Scott Sheppard, an astronomer at the Carnegie Institution for Science in Washington and the co-discoverer of the 2014 planetoid.
- Date: Sep 02, 2018
- Category: Headlines
- Source: Google
Mylife
Scott Sheppard
view sourceTags:
Male, Age: 33, Independent Construction Professional
Locality:
Ashland, OH
Scott Sheppard
view sourceTags:
Male, Age: 42, Site Safety and Health Officer
Locality:
Marksville, LA
Youtube
Googleplus
Scott Sheppard
Work:
Quest Diagnostics - Route Service Representative (2012)
Relationship:
Married
Scott Sheppard
Work:
DISABLE
Tagline:
LET GO LET GOD
Scott Sheppard
Lived:
Clayton, North Carolina
Scott Sheppard
Scott Sheppard
Scott Sheppard
Scott Sheppard
Scott Sheppard
Classmates
Scott Kernan (Sheppard)
view sourceSchools:
Forrest Sherman High School Naples RI 1964-1967
Community:
Julia Hawthorne, Keith West, Sandra Hoag, Rebecca Miller
Biography:
Life
Hi to all! I left Naples at the end of my jr. year but still claim it as "my"...
Scott Sheppard
view sourceSchools:
Labrador City Collegiate High School Labrador City Peru 1989-1993
Community:
Michel Cayouette, Karen Chaulk
Scott Sheppard
view sourceSchools:
Moreau High School Hayward CA 1981-1985
Community:
Rick Leroux, Philip Darbo, Patricia Crowley
Scott Sheppard
view sourceSchools:
St. Mark School Wheaton IL 1963-1969
Community:
Judith Doyle, Lisa Myers
Scott Sheppard
view sourceSchools:
St. Joseph's Central High School Lamaline Peru 1990-1994
Community:
Bernadette Lockyer, David Stacey
Scott Sheppard
view sourceSchools:
St. Joseph's Central High School Lamaline Peru 1990-1994
Community:
Bernadette Lockyer, David Stacey
Scott Sheppard
view sourceSchools:
Sycamore Lane Elementary School Lower Sackville Swaziland 1970-1972, Sidney Stephen Junior High School Bedford Swaziland 1972-1975
Community:
Kenneth Laplaunt, Jeffrey Elliott, Lee Morrison
Scott Sheppard
view sourceSchools:
St. Joseph's High School St. George's Peru 1988-1992
Community:
Ivan White, Ralph Howell, Deanna Barry, Kathy Foster
Flickr
Scott Sheppard
view source
Hibiscus Lodge Scott Shep...
view source
Gerald Scott Sheppard
view source
Paula Scott Sheppard
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Kenneth Scott Sheppard
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Scott A. Sheppard
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Scott Sheppard
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Scott Sheppard
view sourceGet Report for Scott N Sheppard from Germantown, TN, age ~34