Sean Jeffrey Barstow from 5424 Eileen Dr, San Jose, CA 95129, age 49, Phone: (916)2209497

Us Patents

Methods For Forming Resistive-Switching Metal Oxides For Nonvolatile Memory Elements
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US Patent:

7863087, Jan 4, 2011
Filed:

May 2, 2008
Appl. No.:

12/114655
Inventors:

Pragati Kumar - Santa Clara CA, US
Sandra G. Malhotra - San Jose CA, US
Sean Barstow - San Jose CA, US
Tony Chiang - Campbell CA, US
Assignee:

Intermolecular, Inc - San Jose CA
International Classification:

H01L 21/00
H01L 21/16
H01L 21/20
H01L 21/36
US Classification:

438104, 438678, 257E21078, 257E21158
Abstract:

Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed from resistive-switching metal oxide layers. Metal oxide layers may be formed using sputter deposition at relatively low sputtering powers, relatively low duty cycles, and relatively high sputtering gas pressures. Dopants may be incorporated into a base oxide layer at an atomic concentration that is less than the solubility limit of the dopant in the base oxide. At least one oxidation state of the metal in the base oxide is preferably different than at least one oxidation sate of the dopant. The ionic radius of the dopant and the ionic radius of the metal may be selected to be close to each other. Annealing and oxidation operations may be performed on the resistive switching metal oxides. Bistable metal oxides with relatively large resistivities and large high-state-to-low state resistivity ratios may be produced.

Methods For Forming Resistive-Switching Metal Oxides For Nonvolatile Memory Elements
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US Patent:

7977153, Jul 12, 2011
Filed:

Dec 14, 2010
Appl. No.:

12/967530
Inventors:

Pragati Kumar - Santa Clara CA, US
Sandra G. Malhotra - San Jose CA, US
Sean Barstow - San Jose CA, US
Tony Chiang - Campbell CA, US
Assignee:

Intermolecular, Inc. - San Jose CA
International Classification:

H01L 21/00
H01L 21/16
H01L 21/20
H01L 21/36
US Classification:

438104, 438678, 257E21078, 257E21158
Abstract:

Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed from resistive-switching metal oxide layers. Metal oxide layers may be formed using sputter deposition at relatively low sputtering powers, relatively low duty cycles, and relatively high sputtering gas pressures. Dopants may be incorporated into a base oxide layer at an atomic concentration that is less than the solubility limit of the dopant in the base oxide. At least one oxidation state of the metal in the base oxide is preferably different than at least one oxidation state of the dopant. The ionic radius of the dopant and the ionic radius of the metal may be selected to be close to each other. Annealing and oxidation operations may be performed on the resistive switching metal oxides. Bistable metal oxides with relatively large resistivities and large high-state-to-low state resistivity ratios may be produced.

Methods For Forming Resistive Switching Memory Elements By Heating Deposited Layers
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US Patent:

8143092, Mar 27, 2012
Filed:

Mar 9, 2009
Appl. No.:

12/400655
Inventors:

Pragati Kumar - Santa Clara CA, US
Sean Barstow - San Jose CA, US
Sunil Shanker - Santa Clara CA, US
Tony Chiang - Campbell CA, US
International Classification:

H01L 21/00
US Classification:

438104, 257 43, 257E45002
Abstract:

Resistive switching nonvolatile memory elements are provided. A metal-containing layer and an oxide layer for a memory element can be heated using rapid thermal annealing techniques. During heating, the oxide layer may decompose and react with the metal-containing layer. Oxygen from the decomposing oxide layer may form a metal oxide with metal from the metal-containing layer. The resulting metal oxide may exhibit resistive switching for the resistive switching memory elements.

Resistive-Switching Nonvolatile Memory Elements
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US Patent:

8144498, Mar 27, 2012
Filed:

May 2, 2008
Appl. No.:

12/114667
Inventors:

Pragati Kumar - Santa Clara CA, US
Sandra G. Malhotra - San Jose CA, US
Sean Barstow - San Jose CA, US
Tony Chiang - Campbell CA, US
Assignee:

Intermolecular, Inc. - San Jose CA
International Classification:

G11C 11/00
US Classification:

365148, 365100, 365163
Abstract:

Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed in one or more layers on an integrated circuit. Each memory element may have a first conductive layer, a metal oxide layer, and a second conductive layer. Electrical devices such as diodes may be coupled in series with the memory elements. The first conductive layer may be formed from a metal nitride. The metal oxide layer may contain the same metal as the first conductive layer. The metal oxide may form an ohmic contact or a Schottky contact with the first conductive layer. The second conductive layer may form an ohmic contact or a Schottky contact with the metal oxide layer. The first conductive layer, the metal oxide layer, and the second conductive layer may include sublayers. The second conductive layer may include an adhesion or barrier layer and a workfunction control layer.

Nonvolatile Memory Element Including Resistive Switching Metal Oxide Layers
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US Patent:

8294219, Oct 23, 2012
Filed:

Jul 24, 2008
Appl. No.:

12/179538
Inventors:

Sandra G. Malhotra - San Jose CA, US
Pragati Kumar - Santa Clara CA, US
Sean Barstow - San Jose CA, US
Tony Chiang - Campbell CA, US
Prashant B. Phatak - San Jose CA, US
Wen Wu - Pleasanton CA, US
Sunil Shanker - Santa Clara CA, US
Assignee:

Intermolecular, Inc. - San Jose CA
International Classification:

H01L 21/02
US Classification:

257382, 257 68, 257296, 257 71, 257309, 257905, 257908, 257E27084, 257E27075, 257E27097, 257758, 257308
Abstract:

Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer.

Nonvolatile Memory Elements
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US Patent:

8318573, Nov 27, 2012
Filed:

Dec 27, 2011
Appl. No.:

13/337611
Inventors:

Sandra G. Malhotra - San Jose CA, US
Pragati Kumar - Santa Clara CA, US
Sean Barstow - San Jose CA, US
Tony Chiang - Campbell CA, US
Prashant B. Phatak - San Jose CA, US
Wen Wu - Pleasanton CA, US
Sunil Shanker - Santa Clara CA, US
Assignee:

Intermolecular, Inc. - San Jose CA
International Classification:

H01L 21/02
US Classification:

438382, 257E21004, 257E27084, 257E27075, 257E27097, 257 68, 257296
Abstract:

Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer.

Method For Generating Graphene Structures
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US Patent:

8361813, Jan 29, 2013
Filed:

Dec 9, 2011
Appl. No.:

13/315524
Inventors:

Sandip Niyogi - San Jose CA, US
Sean Barstow - San Jose CA, US
Assignee:

Intermolecular, Inc. - San Jose CA
International Classification:

G01R 31/26
H01L 21/20
US Classification:

438 17, 977842, 977734, 977755, 977831, 977832, 257E5104, 438584
Abstract:

A method for depositing graphene is provided. The method includes depositing a layer of non-conducting amorphous carbon over a surface of a substrate and depositing a transition metal in a pattern over the amorphous carbon. The substrate is annealed at a temperature below 500 C. , where the annealing converts the non-conducting amorphous carbon disposed under the transition metal to conducting amorphous carbon. A portion of the pattern of the transition metal is removed from the surface of the substrate to expose the conducting amorphous carbon.

Methods For Forming Resistive-Switching Metal Oxides For Nonvolatile Memory Elements
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US Patent:

8367463, Feb 5, 2013
Filed:

May 19, 2011
Appl. No.:

13/111230
Inventors:

Pragati Kumar - Santa Clara CA, US
Sandra G. Malhotra - San Jose CA, US
Sean Barstow - San Jose CA, US
Tony Chiang - Campbell CA, US
Assignee:

Intermolecular, Inc. - San Jose CA
International Classification:

H01L 21/00
H01L 21/16
H01L 21/20
H01L 21/36
US Classification:

438104, 438678, 257E21078, 257E21158
Abstract:

Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed from resistive-switching metal oxide layers. Metal oxide layers may be formed using sputter deposition at relatively low sputtering powers, relatively low duty cycles, and relatively high sputtering gas pressures. Dopants may be incorporated into a base oxide layer at an atomic concentration that is less than the solubility limit of the dopant in the base oxide. At least one oxidation state of the metal in the base oxide is preferably different than at least one oxidation sate of the dopant. The ionic radius of the dopant and the ionic radius of the metal may be selected to be close to each other. Annealing and oxidation operations may be performed on the resistive switching metal oxides. Bistable metal oxides with relatively large resistivities and large high-state-to-low state resistivity ratios may be produced.