Sean Michael O'Brien

US Patent:

7424699, Sep 9, 2008

Filed:

Jun 10, 2005

Appl. No.:

11/150624

Inventors:

Sean C. O'Brien - Dallas TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

G06F 17/50

US Classification:

716 20, 716 8, 716 9, 716 10, 716 11, 716 19, 716 21, 430 5

Abstract:

Modifying sub-resolution assist features includes receiving a mask pattern for a photolithographic mask. The mask pattern includes main features, and the photolithographic mask is operable to pattern a wafer pattern for a semiconductor wafer. Placement of sub-resolution assist features for the main features is estimated. The following is repeated for one or more iterations: correcting the main features using a wafer pattern model operable to estimate the wafer pattern; evaluating the sub-resolution assist features according to the wafer pattern model; and modifying at least one sub-resolution assist feature in accordance with the evaluation.

US Patent:

7451428, Nov 11, 2008

Filed:

Apr 26, 2005

Appl. No.:

11/114558

Inventors:

Sean C. O'Brien - Dallas TX, US
Guohong Zhang - Plano TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

G06F 17/50

US Classification:

716 19

Abstract:

Merging sub-resolution assist features includes receiving a mask pattern that includes the sub-resolution assist features. A first sub-resolution assist feature is selected to merge with a second sub-resolution assist feature. A merge bar width of a merge bar is established. A distance between the first sub-resolution assist feature and the second sub-resolution assist feature is determined. A merging technique is determined in accordance with the distance and the merge bar width. The first sub-resolution assist feature and the second sub-resolution assist feature are merged according to the identified merging technique.

US Patent:

7461367, Dec 2, 2008

Filed:

Apr 26, 2005

Appl. No.:

11/114582

Inventors:

Sean C. O'Brien - Dallas TX, US
Scott W. Jessen - Allen TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

G06F 17/50

US Classification:

716 19, 716 20, 716 21, 430 5, 430 30

Abstract:

Modifying merged sub-resolution assist features includes receiving a mask pattern comprising the merged sub-resolution assist features, where a segmenting sub-resolution assist feature intersects a segmented sub-resolution assist feature at an intersection. Each sub-resolution assist feature is represented by an axis of the sub-resolution assist feature. The length of at least one axis is established, and an axis is modified in accordance with the length. Each axis is converted to a sub-resolution assist feature to yield the modified merged sub-resolution assist features.

US Patent:

7571419, Aug 4, 2009

Filed:

Feb 9, 2007

Appl. No.:

11/673225

Inventors:

Sean C. O'Brien - Dallas TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

G06F 17/50

US Classification:

716 19, 716 10

Abstract:

A design application improves design checking by utilizing a template. During the checking process, the design application divides the design layout into regions. To further improve processing speed, the design application utilizes the template. The template maps the location of the regions of a design layout during a checking process. The template comprises information such as the dimensions and location of the regions in human-readable form. Because the human-readable template is computationally simple to process, the design application may locate, divide, manage, and merge the regions of the design layout more quickly.

US Patent:

7682759, Mar 23, 2010

Filed:

Oct 31, 2006

Appl. No.:

11/554725

Inventors:

Sean C. O'Brien - Dallas TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

G03F 1/00

US Classification:

430 5

Abstract:

A method is provided for determining pitch of lithographic features of a mask. The method includes determining a bias based on an interaction between a plurality of reference features positioned according to a lithographic parameter of the mask, applying the bias to a plurality of lithographic features of the mask, and determining pitch of the plurality of lithographic features based on interactions between the biased plurality of lithographic features of the mask.

US Patent:

7904854, Mar 8, 2011

Filed:

Aug 4, 2006

Appl. No.:

11/498834

Inventors:

Sean C. O'Brien - Dallas TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

G06F 17/50

US Classification:

716 53, 716 54

Abstract:

In accordance with the invention, there is provided a system and method for checking a mask layout including sub-resolution assist features (SRAFs). A checking program divides each edge of each main feature into sections, forms a set of segments by searching perpendicularly over a distance to determine if any portion of a feature is located within the distance. Segments are then flagged based on whether a feature located within proximity to that segment. A classification program may then classify each of the main features based on the segment data.

US Patent:

8056029, Nov 8, 2011

Filed:

Oct 3, 2008

Appl. No.:

12/244917

Inventors:

Sean C O'Brien - Dallas TX, US
Guohong Zhang - Plano TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

G06F 17/50

US Classification:

716 56, 716 50, 716 53, 716 55

Abstract:

Merging sub-resolution assist features includes receiving a mask pattern that includes the sub-resolution assist features. A first sub-resolution assist feature is selected to merge with a second sub-resolution assist feature. A merge bar width of a merge bar is established. A distance between the first sub-resolution assist feature and the second sub-resolution assist feature is determined. A merging technique is determined in accordance with the distance and the merge bar width. The first sub-resolution assist feature and the second sub-resolution assist feature are merged according to the identified merging technique.

US Patent:

8291354, Oct 16, 2012

Filed:

Sep 20, 2011

Appl. No.:

13/236856

Inventors:

Sean C. O'Brien - Dallas TX, US
Guohong Zhang - Plano TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

G06F 17/50

US Classification:

716 55, 716 50, 716 53

Abstract:

Merging sub-resolution assist features includes receiving a mask pattern that includes the sub-resolution assist features. A first sub-resolution assist feature is selected to merge with a second sub-resolution assist feature. A merge bar width of a merge bar is established. A distance between the first sub-resolution assist feature and the second sub-resolution assist feature is determined. A merging technique is determined in accordance with the distance and the merge bar width. The first sub-resolution assist feature and the second sub-resolution assist feature are merged according to the identified merging technique.