Brad Mays - San Jose CA, US Tetsuya Ishikawa - Saratoga CA, US Sergio Fukuda Shoji - San Jose CA, US
International Classification:
H01T023/00
US Classification:
361234
Abstract:
A method and apparatus for a mixed-mode operation of an electrostatic chuck in a semiconductor substrate processing system. The chuck is operated in a voltage mode before and after a processing and is operated in a current mode during the processing to suppress arcing during the processing of a substrate.
Synchronized Radio Frequency Pulsing For Plasma Etching
Bryan Liao - Saratoga CA, US Katsumasa Kawasaki - Los Gatos CA, US Yashaswini Pattar - Palo Alto CA, US Sergio Fukuda Shoji - San Jose CA, US Duy D. Nguyen - Milpitas CA, US Kartik Ramaswamy - San Jose CA, US Ankur Agarwal - Mountain View CA, US Phillip Stout - Santa Clara CA, US Shahid Rauf - Pleasanton CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/302
US Classification:
438714, 438706, 438710, 216 68
Abstract:
Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.
Methods And Apparatus For Tuning Matching Networks
Chunlei Zhang - Santa Clara CA, US Sergio F. Shoji - San Jose CA, US Andrey Semenin - Sunnyvale CA, US Kartik Ramaswamy - San Jose CA, US James P. Cruse - Santa Cruz CA, US Bryan Liao - Saratoga CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H03H 7/38
US Classification:
31511121, 118715
Abstract:
Methods and apparatus for tuning matching networks are provided herein. A method of tuning a matching network includes providing a matching network coupling an RF source to a load, the matching network having a tunable element disposed at a first set point; increasing a value of the tunable element by a first step above the first set point; sensing a first adjusted value of a reflected RF power; decreasing the value of the tunable element by the first step below the first set point; sensing a second adjusted value of the reflected RF power; comparing the first and the second adjusted values of the reflected RF power; and moving the tunable element to a second set point that corresponds to a position having a lowest adjusted value of the reflected RF power. The method may be repeated until the reflected RF power falls within an acceptable reflected RF power range.
A method of detecting arcing in a semiconductor substrate processing system. In one embodiment, the method includes monitoring a signal, identifying an indicia of arcing in the signal, and performing an action in response to the indicia of arcing when the indicia of arcing is identified.
Feedforward Temperature Control For Plasma Processing Apparatus
Walter R. MERRY - Sunnyvale CA, US Sergio Fukuda SHOJI - San Jose CA, US Chunlei ZHANG - Santa Clara CA, US Yashaswini B. PATTAR - Palo Alto CA, US Duy D. NGUYEN - Milpitas CA, US Tina TSONG - San Jose CA, US Shane C. NEVIL - Livermore CA, US Fernando M. SILVEIRA - Livermore CA, US Brad L. MAYS - San Jose CA, US Kartik RAMASWAMY - San Jose CA, US Hamid NOORBAKHSH - Fremont CA, US
Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.
Component Temperature Control By Coolant Flow Control And Heater Duty Cycle Control
Kartik Ramaswamy - San Jose CA, US Bryan Liao - Saratoga CA, US Sergio Shoji - San Jose CA, US Duy D. Nguyen - Milpitas CA, US Hamid Noorbakhsh - Fremont CA, US David Palagashvili - Mountain View CA, US
Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.
Synchronized Radio Frequency Pulsing For Plasma Etching
APPLIED MATERIALS, INC. - , US KATSUMASA KAWASAKI - Los Gatos CA, US YASHASWINI PATTAR - Palo Alto CA, US SERGIO FUKUDA SHOJI - San Jose CA, US DUY D. NGUYEN - Milpitas CA, US KARTIK RAMASWAMY - San Jose CA, US ANKUR AGARWAL - Mountain View CA, US PHILLIP STOUT - Santa Clara CA, US SHAHID RAUF - Pleasanton CA, US
Assignee:
APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:
C23F 1/00
US Classification:
216 71, 216 67
Abstract:
Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.
Serial Transmission System For Controlling A Network Of I/O Devices
Bahman Radjabi - San Jose CA Sergio Shoji - San Jose CA Mary Nagata - Arcadia CA
Assignee:
SMC Pneumatics, Inc. - San Jose CA
International Classification:
H04J 302 H04L 12403
US Classification:
370449
Abstract:
A serial transmission system for controlling a network of input/output devices is provided. The serial transmission system includes: a three wire serial link; a master unit for controlling communication over the serial link; multiple input remote units for receiving information from the input devices; and multiple output remote units for controlling the output devices. The master unit includes a programmable optically isolated microcontroller adapted to initiate a synchronous data link control (SDLC) communications protocol with the remote units. In addition the master unit includes memory tables for storing input/output, error, diagnostic, status and node availability information. This information can be shared with a PC or host controller. In addition, the PC or host controller can include programs for directing the master unit and remote units to initialize, reset, scan, or maintain an idle condition.