Seth Robert Bank from Austin, TX, age 46

Us Patents

Gainnassb Solar Cells Grown By Molecular Beam Epitaxy
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US Patent:

20090014061, Jan 15, 2009
Filed:

Jul 8, 2008
Appl. No.:

12/217818
Inventors:

Homan B. Yuen - Sunnyvale CA, US
Seth R. Bank - Austin TX, US
Mark A. Wistey - Santa Barbara CA, US
David B. Jackrel - Pacifica CA, US
Assignee:

The Board of Trustees of the Leland Stanford Junior University - Palo Alto CA
International Classification:

H01L 31/00
US Classification:

136255
Abstract:

A high efficiency triple-junction solar cell and method of manufacture therefor is provided wherein junctions are formed between different types of III-V semiconductor alloy materials, one alloy of which contains a combination of an effective amount of antimony (Sb) with gallium (Ga), indium (In), nitrogen (N, the nitride component) and arsenic (As) to form the dilute nitride semiconductor layer GaInNAsSb which has particularly favorable characteristics in a solar cell. In particular, the bandgap and lattice matching promote efficient solar energy conversion.

Enhanced Room Temperature Mid-Ir Leds With Integrated Semiconductor 'Metals'
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US Patent:

20210408324, Dec 30, 2021
Filed:

Jun 25, 2021
Appl. No.:

17/358157
Inventors:

- Austin TX, US
Seth Bank - Austin TX, US
Andrew Briggs - Austin TX, US
Leland Nordin - Austin TX, US
International Classification:

H01L 33/06
H01L 33/00
H01L 33/30
Abstract:

Mid-IR light emitting diodes (LEDs) based on type-II quantum dot (QD) active regions grown with monolithically integrated semiconductor metal layers are provided. These LEDs comprise layers of type-II semiconductor (e.g., InGaSb) quantum dots integrated into a pn junction diode (e.g., InAs) grown above a highly doped backplane, such as an n++ InAs backplane, all in the same epitaxial growth. Aspects described herein minimize non-radiate recombination times and significantly increase radiative recombination rates by controlling the emission of the emitting QDs in the near field of an optical metal.

Alinassb Avalanche Photodiode And Related Method Thereof
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US Patent:

20170244002, Aug 24, 2017
Filed:

Feb 22, 2017
Appl. No.:

15/438870
Inventors:

- Charlottesville VA, US
Min Ren - Charlottesville VA, US
Madison Woodson - Virginia Beach VA, US
Yaojia Chen - Jersey City NJ, US
Seth Bank - Austin TX, US
Scott Maddox - Austin TX, US
Assignee:

University of Virginia Patent Foundation - Charlottesville VA
International Classification:

H01L 31/107
H01L 31/0304
Abstract:

An avalanche photodiode, and related method of manufacture and method of use thereof, that includes a first contact layer; a multiplication layer, wherein the multiplication layer includes AlInAsSb; a charge, wherein the charge layer includes AlInAsSb; an absorption, wherein the absorption layer includes AlInAsSb; a blocking layer; and a second contact layer.

Resumes

Associate Professor And Temple Foundation Faculty Fellow At The University Of Texas At Austin

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Position:

Associate Professor and Temple Foundation Faculty Fellow at The University of Texas at Austin

Location:

Austin, Texas Area

Industry:

Semiconductors

Work:

The University of Texas at Austin - Austin, Texas Area since Aug 2012
Associate Professor and Temple Foundation Faculty Fellow
University of Texas at Austin 2007 - Aug 2012
Assistant Professor
University of California, Santa Barbara Jan 2006 - Dec 2006
Post-Doctoral Scholar

Education:

Stanford University 2003 - 2006
Ph.D., Electrical Engineering Stanford University 2000 - 2003
M.S., Electrical Engineering University of Illinois at Urbana-Champaign 1995 - 2000
B.S., Electrical Engineering