Seth Robert Bank

US Patent:

20090014061, Jan 15, 2009

Filed:

Jul 8, 2008

Appl. No.:

12/217818

Inventors:

Homan B. Yuen - Sunnyvale CA, US
Seth R. Bank - Austin TX, US
Mark A. Wistey - Santa Barbara CA, US
David B. Jackrel - Pacifica CA, US

Assignee:

The Board of Trustees of the Leland Stanford Junior University - Palo Alto CA

International Classification:

H01L 31/00

US Classification:

136255

Abstract:

A high efficiency triple-junction solar cell and method of manufacture therefor is provided wherein junctions are formed between different types of III-V semiconductor alloy materials, one alloy of which contains a combination of an effective amount of antimony (Sb) with gallium (Ga), indium (In), nitrogen (N, the nitride component) and arsenic (As) to form the dilute nitride semiconductor layer GaInNAsSb which has particularly favorable characteristics in a solar cell. In particular, the bandgap and lattice matching promote efficient solar energy conversion.

US Patent:

20210408324, Dec 30, 2021

Filed:

Jun 25, 2021

Appl. No.:

17/358157

Inventors:

- Austin TX, US
Seth Bank - Austin TX, US
Andrew Briggs - Austin TX, US
Leland Nordin - Austin TX, US

International Classification:

H01L 33/06
H01L 33/00
H01L 33/30

Abstract:

Mid-IR light emitting diodes (LEDs) based on type-II quantum dot (QD) active regions grown with monolithically integrated semiconductor metal layers are provided. These LEDs comprise layers of type-II semiconductor (e.g., InGaSb) quantum dots integrated into a pn junction diode (e.g., InAs) grown above a highly doped backplane, such as an n++ InAs backplane, all in the same epitaxial growth. Aspects described herein minimize non-radiate recombination times and significantly increase radiative recombination rates by controlling the emission of the emitting QDs in the near field of an optical metal.

US Patent:

20170244002, Aug 24, 2017

Filed:

Feb 22, 2017

Appl. No.:

15/438870

Inventors:

- Charlottesville VA, US
Min Ren - Charlottesville VA, US
Madison Woodson - Virginia Beach VA, US
Yaojia Chen - Jersey City NJ, US
Seth Bank - Austin TX, US
Scott Maddox - Austin TX, US

Assignee:

University of Virginia Patent Foundation - Charlottesville VA

International Classification:

H01L 31/107
H01L 31/0304

Abstract:

An avalanche photodiode, and related method of manufacture and method of use thereof, that includes a first contact layer; a multiplication layer, wherein the multiplication layer includes AlInAsSb; a charge, wherein the charge layer includes AlInAsSb; an absorption, wherein the absorption layer includes AlInAsSb; a blocking layer; and a second contact layer.