Seunghyun Chae

US Patent:

20170309549, Oct 26, 2017

Filed:

Apr 21, 2016

Appl. No.:

15/135318

Inventors:

- Dallas TX, US
Seunghyun Chae - Allen TX, US
Benjamin Stassen Cook - Rockwall TX, US

International Classification:

H01L 23/495
H01L 21/48
H01L 23/495
H01L 21/60

Abstract:

An integrated circuit die may be fabricating to have a plurality of contacts. A metal post may be formed on each of the plurality of contacts. A plurality of bumps may be formed on a plurality of contact regions of a leadframe or on the posts, in which the plurality of bumps are formed with a material that includes metal nanoparticles. The IC die may be attached to the leadframe by aligning the metal posts to the leadframe and sintering the metal nanoparticles in the plurality of bumps to form a sintered metal bond between each metal post and corresponding contact region of the leadframe.