Shannon Owen Dugan

US Patent:

20150187968, Jul 2, 2015

Filed:

Feb 20, 2015

Appl. No.:

14/627350

Inventors:

- Wilmington DE, US
DMITRY POPLAVSKYY - SAN JOSE CA, US
DANIEL ANEURIN INNS - PALO ALTO CA, US
KARIM LOTFI BENDIMERAD - SAN FRANCISCO CA, US
SHANNON DUGAN - SUNNYVALE CA, US

International Classification:

H01L 31/0224
H01L 31/02

Abstract:

A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) doping the rear surface of the substrate homogeneously with boron in a blanket pattern, thereby forming a p+ region on the rear surface of the silicon substrate; (c) forming a silicon dioxide layer on the front and rear surface; (d) depositing a phosphorus-containing doping paste on the rear surface in a second pattern; (e) heating the silicon substrate to locally diffuse phosphorus into the rear surface of the silicon substrate, thereby forming an n+ region on the rear surface of the silicon substrate through the second pattern, wherein the p+ region and the n+ region on the rear surface collectively form an interdigitated pattern; and (f) removing the second silicon dioxide layer from the silicon substrate.

US Patent:

20150140725, May 21, 2015

Filed:

Nov 20, 2013

Appl. No.:

14/084982

Inventors:

- Wilmington DE, US
Dmitry Poplavskyy - San Jose CA, US
Daniel Aneurin Inns - Palo Alto CA, US
Karim Lotfi Bendimerad - San Francisco CA, US
Shannon Dugan - Sunnyvale CA, US

Assignee:

E I DU PONT DE NEMOURS AND COMPANY - Wilmington DE

International Classification:

H01L 31/18
H01L 31/0224

US Classification:

438 98, 438 57

Abstract:

A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) forming a first silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the first silicon dioxide layer of the rear surface in a first pattern; (d) heating the silicon substrate; (e) removing the first silicon dioxide layer; (f) forming a second silicon dioxide layer on the front surface and the rear surface; (g) depositing a phosphorus-containing doping paste on the second dioxide layer of the rear surface in a second pattern; (h) heating the silicon substrate; and (i) removing the second silicon dioxide layer from the silicon substrate, wherein the first pattern and the second pattern collectively form an interdigitated pattern.