Shih Chun Chang

age ~55

from Arlington, TX

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Also known as:

Connected to:

Shih Chang Phones & Addresses

Corporate and Partnership Law • Corporate Financings (Public and Private) • Intellectual Property • Venture Capital and Private Equity

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Address:

Mastercard Worldwide

Licenses:

New York - Currently registered 1998

Education:

Syracuse University

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Specialties:

Corporate and Partnership Law
Corporate Financings (Public and Private)
Intellectual Property
Venture Capital and Private Equity

ISLN:

909878090

Admitted:

1994

University:

University of Southern California, B.S., 1991

Law School:

Syracuse University, College of Law, J.D., 1994

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Hsu shih chang.jpg. This is a Chinese name; the family name is Xu. Xu Shichang (Chinese: ; pinyin: X Shchng; WadeGiles: Hs Shih-ch'ang, Styled ...

Name / Title

Company / Classification

Phones & Addresses

Shih Lang Chang
Director

Chang's Roy Orr Management, LLC
Management Services

1900 California Ln, Arlington, TX 76015

In-Situ Plasma Treatment For Thin Film Resistors
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US Patent:

20190198603, Jun 27, 2019
Filed:

Dec 27, 2017
Appl. No.:

15/855635
Inventors:

- Dallas TX, US
DHISHAN KANDE - DALLAS TX, US
QI-ZHONG HONG - RICHARDSON TX, US
SHIH CHANG CHANG - ALLEN TX, US
International Classification:

H01L 49/02
H01L 21/3213
Abstract:

A method of fabricating integrated circuits (ICs) includes depositing a dielectric liner layer on a substrate including a semiconductor surface having a plurality of IC die formed therein each including functional circuitry including a plurality of interconnected transistors. A thin film resistor (TFR) layer including chromium (Cr) is deposited on the dielectric liner layer. The substrate is loaded into a hardmask layer deposition tool that includes a plasma source. The TFR layer is in-situ plasma pre-treated including flowing at least one inert gas and at least one oxidizing gas while in the hardmask layer deposition tool. A hardmask layer is deposited after the plasma pre-treating while remaining in the hardmask layer deposition tool. A pattern is formed on the hardmask layer, and the hardmask layer and TFR layer are etched stopping in the dielectric liner layer to form at least one resistor from the defined TFR layer.