Shu Shi Jin

US Patent:

57925224, Aug 11, 1998

Filed:

Sep 18, 1996

Appl. No.:

8/715109

Inventors:

Shu Jin - Sunnyvale CA
Xiao Chun Mu - Saratoga CA
Xing Chen - Cambridge MA
Lawrence Bourget - Reading MA

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H05H 130

US Classification:

427575

Abstract:

A method for forming a material in an opening on a substrate, such as a wafer, using an electron cyclotron resonance-assisted high density plasma physical vapor deposition system. The method comprises the steps of: maintaining a pressure in the range of approximately 1 mTorr to approximately 6 mTorr; generating a plasma by providing a microwave power in the range of approximately 3 kilowatts (kW) to approximately 5 kW; applying a direct current (DC) voltage to a target source of the material in the range of approximately (negative) -600 volts to approximately -1000 volts; providing a current of a predetermined amount to a first electromagnet; and providing a current to a second electromagnet that is less than said predetermined amount, wherein said second electromagnet is disposed below said first electromagnet; and forming a layer of the material in the opening.