Donald R. Lampe - Ellicott City MD Samar Sinharoy - Monroeville PA Shu Y. Wu - Artesia CA Harry Buhay - Allison Park PA Maurice H. Francombe - Penn Hills PA S. Visvanathan Krishnaswamy - Monroeville PA
Assignee:
Westinghouse Electric Corp. - Pittsburgh PA
International Classification:
H01L 2968 H01L 2702 H01G 410
US Classification:
357 235
Abstract:
A ferroelectric device that comprises a polarizing thin film of BaMF. sub. 4 deposited on a substrate. Ba is barium, M is one of the metals of the group consisting of iron (FE), manganese (Mn), cobolt (Co), nickel (Ni), magnesium (Mg), and zinc (Zn). The substrate is silicon, sapphire, or gallium arsenide. A non-volatile NDRO and DRO memory cell and methods for depositing the thin film. A method of depositing bismuth titanate on a substrate are described.