Shu Q Wu from Rockville, MD, age 69

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Work:

Montclair International 1989 - 2015
President

Skills:

国际贸易

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Position:

cio at GD Consulting

Location:

Aland Islands

Industry:

Accounting

Work:

GD Consulting
cio

Education:

ewerwe 2007 - 2012

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Location:

United States

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Location:

United States

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Specialties:

Allergy & Immunology
Internal Medicine
Pediatric Allergy & Immunology

Education:

Wayne State University (2006)

Ferroelectric Thin Film Material, Method Of Deposition, And Devices Using Same
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US Patent:

51462990, Sep 8, 1992
Filed:

Mar 2, 1990
Appl. No.:

7/487056
Inventors:

Donald R. Lampe - Ellicott City MD
Samar Sinharoy - Monroeville PA
Shu Y. Wu - Artesia CA
Harry Buhay - Allison Park PA
Maurice H. Francombe - Penn Hills PA
S. Visvanathan Krishnaswamy - Monroeville PA
Assignee:

Westinghouse Electric Corp. - Pittsburgh PA
International Classification:

H01L 2968
H01L 2702
H01G 410
US Classification:

357 235
Abstract:

A ferroelectric device that comprises a polarizing thin film of BaMF. sub. 4 deposited on a substrate. Ba is barium, M is one of the metals of the group consisting of iron (FE), manganese (Mn), cobolt (Co), nickel (Ni), magnesium (Mg), and zinc (Zn). The substrate is silicon, sapphire, or gallium arsenide. A non-volatile NDRO and DRO memory cell and methods for depositing the thin film. A method of depositing bismuth titanate on a substrate are described.