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Shunsaku Tokito

age ~53

from Austin, TX

Shunsaku Tokito Phones & Addresses

  • Austin, TX

Us Patents

  • Methods And Apparatus For Low Power Sram Using Evaluation Circuit

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  • US Patent:
    7423900, Sep 9, 2008
  • Filed:
    Nov 15, 2006
  • Appl. No.:
    11/559982
  • Inventors:
    Shunsaku Tokito - Austin TX, US
  • Assignee:
    Sony Computer Entertainment Inc. - Tokyo
  • International Classification:
    G11C 11/00
  • US Classification:
    365154, 365203, 365189011
  • Abstract:
    Methods and apparatus provide for controlling an SRAM memory, the SRAM memory including a plurality of memory cells arranged in an array of rows (word lines) and columns (bit lines), including: mirroring logic values of at least one of the bit lines to a global bit line; driving the global bit line to a pre-charge logic value in response to a clock signal that cycles at least one time during successive read and write operations to the memory cell; maintaining the global bit line at the pre-charge logic value during a write operation in which a logic value is written to the bit line that is opposite to the pre-charge logic value.
  • Method And System For Rebooting A Processor In A Multi-Processor System

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  • US Patent:
    7676683, Mar 9, 2010
  • Filed:
    Aug 24, 2006
  • Appl. No.:
    11/509493
  • Inventors:
    Atsushi Tsuji - Kanagawa, JP
    Chiaki Takano - Austin TX, US
    Masaaki Nozaki - Kanagawa, JP
    Shunsaku Tokito - Austin TX, US
    Hiroaki Terakawa - Austin TX, US
  • Assignee:
    Sony Computer Entertainment Inc. - Tokyo
  • International Classification:
    G06F 1/00
    G06F 9/00
    G06F 13/00
    G06F 12/00
  • US Classification:
    713323, 713 1, 713300, 710104, 710242
  • Abstract:
    Processors arranged in a multi-processor configuration for substantially parallel operations receive their initialization data in order to start operations, such as graphics computations, real-time multimedia streaming, etc. Due to a change in the processing load, one or more processors might be deactivated. Subsequently, the load increases to such a level that requires all or some of the deactivated processors to be active again. In this case, the boot-up process of the entire system is not carried out as it would be time-consuming and wasteful; instead, responsive to a control signal only those processors that were previously in inactive mode are re-initialized by selecting a configuration data supplied by another processor, controller or any other intelligent programmable device. Alternatively, the configuration data may be accessed and retrieved from a local storage medium individually located in each processor, thereby re-booting only those inactive processors and without re-initializing the entire system.
  • Methods And Apparatus For Low Power Sram Based On Stored Data

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  • US Patent:
    7684231, Mar 23, 2010
  • Filed:
    Dec 12, 2006
  • Appl. No.:
    11/609631
  • Inventors:
    Atsushi Hayashi - Kanagawa, JP
    Shunsaku Tokito - Austin TX, US
    Hiroshi Yoshihara - Round Rock TX, US
    Yuuki Fujiyama - Tokyo, JP
  • Assignee:
    Sony Computer Entertainment Inc. - Tokyo
  • International Classification:
    G11C 11/00
  • US Classification:
    365154, 36518907, 365190, 365227
  • Abstract:
    Methods and apparatus provide for controlling an SRAM memory, the SRAM memory including a plurality of memory cells arranged in an array of rows (word lines) and columns (bit lines), comprising: inverting a state of data for input to one or more columns of the array; and storing the inverted data in one or more memory cells of the one or more columns.
  • Methods And Apparatus For Low Power Sram

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  • US Patent:
    20070047349, Mar 1, 2007
  • Filed:
    Sep 1, 2005
  • Appl. No.:
    11/218009
  • Inventors:
    Shunsaku Tokito - Austin TX, US
  • International Classification:
    G11C 7/00
  • US Classification:
    365203000
  • Abstract:
    Methods and apparatus provide for pre-charging a bit line and a complementary bit line of an SRAM memory cell of the SRAM memory to a voltage level below a power supply level, Vdd, of the SRAM memory prior to writing data to the memory cell.

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