Simeon K Ma

US Patent:

20040244692, Dec 9, 2004

Filed:

Jun 4, 2003

Appl. No.:

10/454428

Inventors:

Jiong Chen - San Jose CA, US
Simeon Ma - Danvers MA, US

Assignee:

Advanced Ion Beam Technology, Inc.

International Classification:

C23C016/00

US Classification:

118/7230CB

Abstract:

An ion implantation method is disclosed that includes a step of carrying out a built-in early check to ensure accurate and correct operation parameters are employed when the setup operation is started. By applying built-in check processes, the repeatability of ion beam setup processes can be enhanced. The ion beam setup method includes a formula-based searching algorithm to accurately and rapidly determines the atomic mass unit (AMU) using a feedback data other than the beam current. The same formula is used to check for subsystems consistency and reliability to ensure accuracy of the ion beam being set up. The searching algorithm further implements a peaking algorithm to avoid the common pitfalls of misinterpretation of data and achieve an accurate, reliable, and fast tuning with the help of “Trusty Recipes” as initial conditions and “Limits Parameters” as constraints. In order to enhance and facilitate the human-system interactions, graphic user interface (GUI) is used to minimize human errors and to monitor and to rapidly react to abnormal operation conditions. By reducing the ion beam setup time, it is feasible to shutoff the ion source generation and deflection subsystem during a wafer exchange period. The shutoff operation enables the cost reductions by reducing wastes of materials; manpower and other system resources while increase the overall system productivities.