Siswanto Sutanto

US Patent:

7163896, Jan 16, 2007

Filed:

Dec 10, 2003

Appl. No.:

10/733858

Inventors:

Wenxian Zhu - Palo Alto CA, US
Jengyi Yu - San Jose CA, US
Siswanto Sutanto - San Jose CA, US
Pingsheng Sun - San Jose CA, US
Jeffrey Chih-Hou Lowe - Milpitas CA, US
Waikit Fung - Cupertino CA, US
Tze Wing Poon - Sunnyvale CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/311

US Classification:

438694, 257E21218

Abstract:

Biased plasma etch processes incorporating Hetch chemistries. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating etch chemistries which incorporate hydrogen as the etchant that can effectively fill high aspect ratio gaps while reducing or eliminating dielectric contamination by etchant chemical species.

US Patent:

7078312, Jul 18, 2006

Filed:

Sep 2, 2003

Appl. No.:

10/654113

Inventors:

Siswanto Sutanto - San Jose CA, US
Wenxian Zhu - Palo Alto CA, US
Waikit Fung - Cupertino CA, US
Mayasari Lim - Union CIty CA, US
Vishal Gauri - San Jose CA, US
George D. Papasouliotis - Cupertino CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/76

US Classification:

438424, 438435, 438443, 438699, 438402, 438778, 438959

Abstract:

Plasma etch processes incorporating etch chemistries which include hydrogen. In particular, high density plasma chemical vapor deposition-etch-deposition processes incorporating etch chemistries which include hydrogen that can effectively fill high aspect ratio (typically at least 3:1, for example 6:1, and up to 10:1 or higher), narrow width (typically sub 0. 13 micron, for example 0. 1 micron or less) gaps while reducing or eliminating chamber loading and redeposition and improving wafer-to-wafer uniformity relative to conventional deposition-etch-deposition processes which do not incorporate hydrogen in their etch chemistries.