Siu Sen Cheng

US Patent:

8278139, Oct 2, 2012

Filed:

Sep 25, 2009

Appl. No.:

12/566948

Inventors:

Siu F. Cheng - San Jose CA, US
Deenesh Padhi - Sunnyvale CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/02

US Classification:

438102, 438104, 438382, 438384, 438628, 257 4, 257E45002, 257E21003, 257E21004, 257E21005

Abstract:

A method and apparatus is provided for forming a resistive memory device having good adhesion among the components thereof. A first conductive layer is formed on a substrate, and the surface of the first conductive layer is treated to add adhesion promoting materials to the surface. The adhesion promoting materials may form a layer on the surface, or they may incorporate into the surface or merely passivate the surface of the first conductive layer. A variable resistance layer is formed on the treated surface, and a second conductive layer is formed on the variable resistance layer. Adhesion promoting materials may also be included at the interface between the variable resistance layer and the second conductive layer.

US Patent:

20090269512, Oct 29, 2009

Filed:

Apr 28, 2008

Appl. No.:

12/110879

Inventors:

Jianhua Zhou - San Jose CA, US
Deenesh Padhi - Sunnyvale CA, US
Karthik Janakiraman - San Jose CA, US
Hang Yu - Santa Clara CA, US
Siu F. Cheng - San Jose CA, US
Yoganand Saripalli - Sunnyvale CA, US
Tersem Summan - San Jose CA, US

International Classification:

C23C 16/44

US Classification:

427569, 118723 I

Abstract:

A method and apparatus for adjust local plasma density during a plasma process. One embodiment provides an electrode assembly comprising a conductive faceplate having a nonplanar surface. The nonplanar surface is configured to face a substrate during processing and the conductive faceplate is disposed so that the nonplanar surface is opposing a substrate support having an electrode. The conductive faceplate and the substrate support form a plasma volume. The nonplanar surface is configured to adjust electric field between the conductive plate and the electrode by varying a distance between the conductive plate and the electrode.

US Patent:

20110244142, Oct 6, 2011

Filed:

Mar 30, 2010

Appl. No.:

12/750378

Inventors:

SIU F. CHENG - San Jose CA, US
Jacob Janzen - Lorsch, DE
Deenesh Padhi - Sunnyvale CA, US
Bok Hoen Kim - San Jose CA, US

Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA

International Classification:

C23C 16/513

US Classification:

427569

Abstract:

Embodiments described herein generally relate to the fabrication of integrated circuits and more particularly to nitrogen doped amorphous carbon layers and processes for depositing nitrogen doped amorphous carbon layers on a semiconductor substrate. In one embodiment, a method of forming a nitrogen doped amorphous carbon layer on a substrate is provided. The method comprises positioning a substrate in a substrate processing chamber, introducing a nitrogen containing hydrocarbon source into the processing chamber, introducing a hydrocarbon source into the processing chamber, introducing a plasma-initiating gas into the processing chamber, generating a plasma in the processing chamber, and forming a nitrogen doped amorphous carbon layer on the substrate.