Song Fang F Cheng

US Patent:

20170125625, May 4, 2017

Filed:

Oct 28, 2016

Appl. No.:

15/337798

Inventors:

- Toledo OH, US
Alvin D. Compaan - Holland OH, US
Victor V. Plotnikov - Toledo OH, US
Ambalanath Shan - Toledo OH, US
Anthony J. Matthews - Toledo OH, US
Robert D. Fisher - Toledo OH, US
Song Cheng - Flat Rock MI, US

International Classification:

H01L 31/115
H01L 31/0296
G01T 3/08
H01L 31/0352
H01L 31/0224
H01L 31/0368
H01L 31/0216

Abstract:

A particle detector includes a support member. A front electrode layer is disposed over the support member. A semiconductor heterojunction is disposed over the front electrode layer. The semiconductor heterojunction has at least a polycrystalline n-type layer and at least a polycrystalline p-type layer. A back electrode layer is disposed over the semiconductor heterojunction. The back electrode includes at least one removed portion that separates a first portion of the back electrode layer from a second portion of the back electrode layer. The particle detector also includes a first body of electrically insulating material which separates a first portion of the semiconductor heterojunction from a second portion of the semiconductor heterojunction. The first body of electrically insulating material also separates a first portion of the front electrode layer from a second portion of the front electrode layer.