Soo B Lee

US Patent:

6346605, Feb 12, 2002

Filed:

Mar 31, 1998

Appl. No.:

09/052089

Inventors:

Soo Young Lee - New York NY
Yongwon Choi - New York NY

Assignee:

The Rockfeller University - New York NY

International Classification:

C07K 1447

US Classification:

530350, 530351, 514 2

Abstract:

A novel component of the TRAF (TNF Receptor Associated Factor) signaling complex, designated TRIP (TRAF Interacting Protein) which associates with the TNFR2 or CD30 signaling complex through its interaction with the TRAF2 protein and influences signals responsible for cell activation, cell proliferation and cell death.

US Patent:

6900050, May 31, 2005

Filed:

Nov 20, 2000

Appl. No.:

09/716536

Inventors:

Soo Young Lee - New York NY, US
Yongwon Choi - New York NY, US

Assignee:

The Rockefeller University - New York NY

International Classification:

C12N015/12
C12N005/10

US Classification:

4353201, 435325, 536 235

Abstract:

A novel component of the TRAF (TNF Receptor Associated Factor) signaling complex, designated TRIP (TRAF Interacting Protein) which associates with the TNFR2 or CD30 signaling complex through its interaction with the TRAF2 protein and influences signals responsible for cell activation, cell proliferation and cell death.

US Patent:

20070111241, May 17, 2007

Filed:

Oct 16, 2006

Appl. No.:

11/582008

Inventors:

Nezih Cereb - Ossining NY, US
Soo Lee - Ossining NY, US

International Classification:

C12Q 1/68
G06F 19/00

US Classification:

435006000, 702020000

Abstract:

The present invention relates to a system and method for accessing, tracking and editing sequence analysis and software to accomplish the same. The present invention includes embodiments that permit a party, for example a customer, to track the status of the samples (e.g., tissue, blood, or DNA) that the party sends for sequence based typing (“SBT”) analysis. The party can also participate in the analysis by accessing the sequencing data for the submitted samples. A party is able to remotely access tools for sequence based typing (e.g., Histomatcher), and using such tools, the party can review and edit the data. The party can also generate reports via the accessed tools.

US Patent:

20160359004, Dec 8, 2016

Filed:

Jun 3, 2015

Appl. No.:

14/729741

Inventors:

- Plainview NY, US
George Papasouliotis - Warren NJ, US
Balakrishnan Krishnan - Bridgewater NJ, US
Soo Min Lee - Bridgewater NJ, US

International Classification:

H01L 29/15
H01L 29/205
H01L 29/20

Abstract:

Stress control using superlattice structures for epitaxy on base wafer substrates, including AlN/GaN superlattices for epitaxy of GaN on silicon {111} substrates. Crack-free GaN cap layers can be grown over superlattice structures containing AlN/GaN superlattice layers. Compressive and tensile stress can be precisely adjusted by changing the thickness of the superlattice layers and the number of superlattice layers. For a constant period thickness, growth conditions, such as growth rate of GaN, V/III ratio during AlN growth, and growth temperature, can be adjusted.