Stephen B. Ippolito - Tampa FL M. Selim Unlu - Jamaica Plain MA Bennett B Goldberg - Newton MA
Assignee:
The Trustees of Boston University - Boston MA
International Classification:
G02B 2102
US Classification:
359656, 359661
Abstract:
A viewing enhancement lens ( -NAIL) which functions to increase the numerical aperture or light gathering or focusing power of viewing optics such as a microscope ( ) used to view structure within a substrate such as a semiconductor wafer or chip or of imaging optics such as media recorders. The result is to increase the resolution of the system by a factor of between n, and n , where n is the index of retraction of the lens substrate.
Angular Spectrum Tailoring In Solid Immersion Microscopy For Circuit Analysis
Stephen Bradley Ippolito - Croton on Hudson NY, US Darrell L. Miles - Wappingers Falls NY, US Peilin Song - Lagrangeville NY, US John D. Sylvestri - Poughkeepsie NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G01N 21/00
US Classification:
3562371
Abstract:
A method and structure for locating a fault in a semiconductor chip. The chip includes a substrate on a dielectric interconnect. A first electrical response image of the chip, which includes a spot representing the fault, is overlayed on a first reflection image for monochromatic light in an optical path from an optical microscope through a SIL/NAIL and into the chip. The index of refraction of the substrate exceeds that of the dielectric interconnect and is equal to that of the SIL/NAIL. A second electrical response image of the chip is overlayed on a second reflection image for the monochromatic light in an optical path in which an optical stop prevents all subcritical angular components of the monochromatic light from being incident on the SIL/NAIL. If the second electrical response image includes or does not include the spot, then the fault is in the substrate or the dielectric interconnect, respectively.
Angular Spectrum Tailoring In Solid Immersion Microscopy For Circuit Analysis
Stephen Bradley Ippolito - Croton on Hudson NY, US Darrell L. Miles - Wappingers Falls NY, US Peilin Song - Lagrangeville NY, US John D. Sylvestri - Poughkeepsie NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G01N 21/00
US Classification:
3562371
Abstract:
A structure for locating a fault in a semiconductor chip. The chip includes a substrate on a dielectric interconnect. A first electrical response image of the chip, which includes a spot representing the fault, is overlayed on a first reflection image for monochromatic light in an optical path from an optical microscope through a SIL/NAIL and into the chip. The index of refraction of the substrate exceeds that of the dielectric interconnect and is equal to that of the SIL/NAIL. A second electrical response image of the chip is overlayed on a second reflection image for the monochromatic light in an optical path in which an optical stop prevents all subcritical angular components of the monochromatic light from being incident on the SIL/NAIL. If the second electrical response image includes or does not include the spot, then the fault is in the substrate or the dielectric interconnect, respectively.
Stephen Bradley Ippolito - Ossining NY, US Alan J. Weger - Mohegan Lake NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G01R 31/02
US Classification:
32476205, 32475603
Abstract:
A semiconductor wafer resting on a contact element has a spatially distributed force applied to its frontside and an equal and opposing force applied to its backside. The contact element comprises a solid immersion lens (SIL), and has an area less than the area of the wafer, but no less than the larger of the area of an optical collection area and an electrical probe assembly. The equal and opposing forces cause the wafer to conform to the shape of the contact element. Measurements, including electrical testing, optical probing and wafer characterization are performed on the wafer.
Stephen Bradley Ippolito - Yorktown Heights NY, US Alan J. Weger - Yorktown Heights NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G01R 31/00
US Classification:
324501, 32475016
Abstract:
A semiconductor wafer resting on a contact element has a spatially distributed force applied to its frontside and an equal and opposing force applied to its backside. The contact element comprises a solid immersion lens (SIL), and has an area less than the area of the wafer, but no less than the larger of the area of an optical collection area and an electrical probe assembly. The equal and opposing forces cause the wafer to conform to the shape of the contact element. Measurements, including electrical testing, optical probing and wafer characterization are performed on the wafer.
Method For Imaging A Feature Using A Scanning Probe Microscope
- Fremont CA, US Stephen Bradley Ippolito - Saint Petersburg FL, US Sean Zumwalt - Oxnard CA, US
Assignee:
DCG Systems, Inc. - Fremont CA
International Classification:
G01Q 60/30
Abstract:
Using a local-potential-driving probe drives a conductor to a known potential while adjacent lines are grounded through the sample body reduces electrostatic scanning microscope signal from adjacent lines, allows imaging of metal lines deeper in the sample. Providing different potentials locally on different conductive lines using multiple local-potential-driving probes allows different conductors to be highlighted in the same image, for example, by changing the phase of the signal being applied to the different local-potential-driving probes.
- Goleta CA, US Stephen Bradley Ippolito - Saint Petersburg FL, US
International Classification:
G01Q 20/02 G01Q 60/24 G02B 6/36 G01Q 60/38
Abstract:
A SPM head incorporates a probe and a cantilever on which the probe is mounted. The cantilever has a planar reflecting surface proximate a free end of the cantilever. The cantilever extends from a mechanical mount and a single-mode optical fiber is supported by the mechanical mount to provide a beam. A micromirror is mounted to reflect the beam substantially 90 to the planar reflecting surface.
A SPM head incorporates a probe and a cantilever on which the probe is mounted. The cantilever has a planar reflecting surface proximate a free end of the cantilever. The cantilever extends from a mechanical mount and a single-mode optical fiber is supported by the mechanical mount to provide a beam axis at an angle away from normal relative to the reflecting surface.