Russell J. Low - Rowley MA, US Jonathan Gerald England - Horsham, GB Stephen E. Krause - Ipswich MA, US Eric D. Hermanson - Georgetown MA, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
H01J 37/317
US Classification:
25049221
Abstract:
Techniques for reducing effects of photoresist outgassing are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for reducing effects of photoresist outgassing in an ion implanter. The apparatus may comprise a drift tube located between an end-station and an upstream beamline component. The apparatus may also comprise a first variable aperture between the drift tube and the end-station. The apparatus may further comprise a second variable aperture between the drift tube and the upstream beamline component. The first variable aperture and the second variable aperture can be adjusted to facilitate differential pumping.
Techniques For Preventing Parasitic Beamlets From Affecting Ion Implantation
Russell J. Low - Rowley MA, US Jonathan Gerald England - Horsham, GB Stephen E. Krause - Ipswich MA, US Eric D. Hermanson - Georgetown MA, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
H01J 37/317
US Classification:
250396R, 25049221
Abstract:
Techniques for preventing parasitic beamlets from affecting ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for preventing parasitic beamlets from affecting ion implantation. The apparatus may comprise a controller that is configured to scan a spot beam back and forth, thereby forming an ion beam spanning a predetermined width. The apparatus may also comprise an aperture mechanism that, if kept stationary, allows the spot beam to pass through. The apparatus may further comprise a synchronization mechanism, coupled to the controller and the aperture mechanism, that is configured to cause the aperture mechanism to move in synchronization with the scanned spot beam, allowing the scanned spot beam to pass through but blocking one or more parasitic beamlets associated with the spot beam.
Techniques For Controlling A Charged Particle Beam
Piotr R. Lubicki - Peabody MA, US Russell J. Low - Rowley MA, US Stephen E. Krause - Ipswich MA, US Frank Sinclair - Quincy MA, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
H05H 9/00
US Classification:
315505, 315 542
Abstract:
Techniques for controlling a charged particle beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a charged particle acceleration/deceleration system. The charged particle acceleration/deceleration system may comprise an accelerator column, which may comprise a plurality of electrodes. The plurality of electrodes may have apertures through which a charged particle beam may pass. The charged particle acceleration/deceleration system may also comprise a voltage grading system. The voltage grading system may comprise a first fluid reservoir and a first fluid circuit. The first fluid circuit may have conductive connectors connecting to at least one of the plurality of electrodes. The voltage grading system may further comprise fluid in the first fluid circuit. The fluid may have an electrical resistance.
Douglas E. May - Melrose MA, US Kasegn D. Tekletsadik - Rexford NY, US Eric Hermanson - Georgetown MA, US Piotr R. Lubicki - Peabody MA, US Russell J. Low - Rowley MA, US Joseph C. Olson - Beverly MA, US Stephen E. Krause - Ipswich MA, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
H01H 9/00
US Classification:
200 6113, 200277, 200503, 200 1918
Abstract:
Techniques for making high voltage connections are disclosed. In one particular exemplary embodiment, the techniques may be realized as an electrical switch. The electrical switch may comprise a component extending from a first electrical contact to a second electrical contact. The component may also comprise a non-conductive section and a conductive section. In a first mode of operation, at least a portion of the non-conductive section may be positioned between the two electrical contacts to insulate the two electrical contacts. In a second mode of operation, the conductive section may be positioned between the two electrical contacts to connect the two electrical contacts.
Stephen Krause - Ipswich MA, US Eric R. Cobb - Danvers MA, US Russell Low - Rowley MA, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
B25B 3/00
US Classification:
269 6, 269 3, 29270, 29466, 81 944, 81427
Abstract:
A method and clamp system for use on an ion implanter system for aligning a cathode and filament relative to one another in-situ are disclosed. The invention includes a clamp system having a clamp including a first clamp member separably coupled to a second clamp member, and an opening to a mount portion of one of the cathode and the filament in at least one of the clamp members. Each clamp member includes a surface to engage a mount portion of one of the cathode and the filament. The opening is adapted to receive a positioning tool to position the cathode and the filament relative to one another by moving the mount portion when the clamp is released. The mount portion may include a tool receiving member to facilitate accurate positioning.
Stephen E. Krause - Ipswich MA, US Russell J. Low - Rowley MA, US Kasegn D. Tekletsadik - Rexford NY, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
H01T 23/00 H01P 1/10 H01H 47/00
US Classification:
361233, 361236
Abstract:
An apparatus and method for trapping particles in a housing is disclosed. A high voltage terminal/structure is situated within a housing. A conductive material, having a plurality of holes, such as a mesh, is disposed a distance away from an interior surface of the housing, such as the floor of the housing, forming a particle trap. The conductive mesh is biased so that the electrical field within the trap is either non-existent or pushing toward the floor, so as to retain particles within the trap. Additionally, a particle mover, such as a fan or mechanical vibration device, can be used to urge particles into the openings in the mesh. Furthermore, a conditioning phase may be used prior to operating the high voltage terminal, whereby a voltage is applied to the conductive mesh so as to attract particles toward the particle trap.
Douglas E. MAY - Melrose MA, US Kasegn D. Tekletsadik - Middleton MA, US Eric Hermanson - Georgetown MA, US Piotr R. Lubicki - Peabody MA, US Russell J. Low - Rowley MA, US Joseph C. Olson - Beverly MA, US Stephen E. Krause - Ipswich MA, US
Assignee:
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. - Gloucester MA
International Classification:
H01H 1/00 H01H 3/54
US Classification:
200238, 200329, 200330
Abstract:
Techniques for making high voltage connections are disclosed. In one particular exemplary embodiment, the techniques may be realized as an electrical switch. The electrical switch may comprise a component extending from a first electrical contact to a second electrical contact. The component may also comprise a non-conductive section and a conductive section. In a first mode of operation, at least a portion of the non-conductive section may be positioned between the two electrical contacts to insulate the two electrical contacts. In a second mode of operation, the conductive section may be positioned between the two electrical contacts to connect the two electrical contacts.
Our Lady of the Visitation School Paramus NJ 1980-1984
Community:
Solaida Mamsaang, Susan Lee, Gia Trapani, Tom Pace, Lynn Johnson, Elizabeth Salazar, Luc Bernard, Terence English, Kristen Sheeran, Erika Camacho, Helen Schneider, Karen Faller