Steven S Berger

US Patent:

55610080, Oct 1, 1996

Filed:

Jan 27, 1995

Appl. No.:

8/379052

Inventors:

Steven D. Berger - Basking Ridge NJ
James A. Liddle - Scotch Plains NJ
George P. Watson - Harrison NJ

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

G03F 900

US Classification:

430 4

Abstract:

The invention is directed to a method and apparatus of projection lithography in which the contrast introduced into a radiation sensitive material caused by the proximity effect is effectively removed in a single exposure. Patterned radiation is transmitted through a lens system with at least one lens and a back focal plane filter. The back focal plane filter has at least two apertures, an image aperture and a proximity effect correction aperture. Patterned radiation is transmitted through the image aperture and introduces the desired image into the energy sensitive resist material. A portion of the inverse pattern radiation is transmitted through the proximity effect correction aperture and onto the energy sensitive resist material to effectively remove the contrast therein caused by the proximity effect.

US Patent:

57010145, Dec 23, 1997

Filed:

Jun 25, 1996

Appl. No.:

8/673705

Inventors:

Steven David Berger - Basking Ridge NJ
James Alexander Liddle - Scotch Plains NJ
George Patrick Watson - Harrison NJ

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

H01J 37317

US Classification:

25049222

Abstract:

The invention is directed to a method and apparatus of projection lithography in which the contrast introduced into a radiation sensitive material caused by the proximity effect is effectively removed in a single exposure. Patterned radiation is transmitted through a lens system with at least one lens and a back focal plane filter. The back focal plane filter has at least two apertures, an image aperture and a proximity effect correction aperture. Patterned radiation is transmitted through the image aperture and introduces the desired image into the energy sensitive resist material. A portion of the inverse pattern radiation is transmitted through the proximity effect correction aperture and onto the energy sensitive resist material to effectively remove the contrast therein caused by the proximity effect.

US Patent:

53168798, May 31, 1994

Filed:

Jul 14, 1992

Appl. No.:

7/913508

Inventors:

Steven D. Berger - Chatham NJ
James A. Liddle - Chatham NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

G03F 900

US Classification:

430 5

Abstract:

Fabrication of sub-micron design rule integrated circuits entails imposition of patterning information, consisting of degree of scattering, on a projected scanning beam of accelerated electrons by means of a mask, imaging being dependent upon passage through a back focal plane filter including a plurality of apertures for selectively passing relatively unscattered electrons.

US Patent:

51302136, Jul 14, 1992

Filed:

Mar 23, 1990

Appl. No.:

7/498179

Inventors:

Steven D. Berger - Chatham NJ
John M. Gibson - Morristown NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

G03F 900

US Classification:

430 4

Abstract:

Fabrication of devices of micron and submicron minimum feature size is accomplished by lithographic processing involving a back focal plane filter. A particularly important fabrication approach depends upon mask patterns which produce images based on discrimination as between scattered and unscattered radiation by accelerated electrons.

US Patent:

RE369640, Nov 21, 2000

Filed:

Apr 29, 1994

Appl. No.:

8/236742

Inventors:

Steven David Berger - Basking Ridge NJ
John Murray Gibson - Champaign IL

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

B05D 512
B05D 306
B05D 304

US Classification:

430296

Abstract:

Fabrication of devices of micron and submicron minimum feature size is accomplished by lithographic processing involving a back focal plane filter. A particularly important fabrication approach depends upon mask patterns which produce images based on discrimination as between scattered and unscattered radiation by accelerated electrons.

US Patent:

52799255, Jan 18, 1994

Filed:

Dec 16, 1992

Appl. No.:

7/991832

Inventors:

Steven D. Berger - Basking Ridge NJ
James A. Liddle - Scotch Plains NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

G03F 900

US Classification:

430246

Abstract:

It has been found that for a SCALPEL lithographic system thermal effects dictate that the acceleration voltage for the exposing electrons be maintained within a specific range. This range depends on a variety of factors but is generally in the 50 to 150 KeV region. Additionally, thermal considerations also dictate the method of scanning the mask to print an entire wafer.

US Patent:

53824989, Jan 17, 1995

Filed:

Dec 16, 1992

Appl. No.:

7/991685

Inventors:

Steven D. Berger - Basking Ridge NJ

Assignee:

AT&T Corp. - Murray Hill NJ

International Classification:

G03F 900

US Classification:

430296

Abstract:

Projection lithographic systems relying on radiant energy such as electrons and ion beams are substantially affected by the distance between the projection mask and the substrate. In particular, to avoid undesirable limitation of the obtainable resolution, this distance should be a meter or less.

US Patent:

50791125, Jan 7, 1992

Filed:

Aug 7, 1989

Appl. No.:

7/390139

Inventors:

Steven D. Berger - Chatham NJ
John M. Gibson - Morristown NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

G03F 900

US Classification:

430 4

Abstract:

Fabrication of devices of micron and submicron minimum feature size is accomplished by lithographic processing involving a back focal plane filter. A particularly important fabrication approach depends upon mask patterns which produce images based on descrimination as between scattered and unscattered radiation.