Steven W Hughes

US Patent:

20110220194, Sep 15, 2011

Filed:

Jul 14, 2010

Appl. No.:

12/836511

Inventors:

Juanita N. Kurtin - Hillsboro OR, US
Alex R. Guichard - Portland OR, US
Steven M. Hughes - Hillsboro OR, US
Alex C. Mayer - Portland OR, US
Oun Ho Park - Portland OR, US
Shawn R. Scully - Portland OR, US
Paul-Emile B. Trudeau - Portland OR, US
Colin C. Reese - Portland OR, US
Manav Sheoran - Portland OR, US
Georgeta Masson - Portland OR, US

Assignee:

Spectrawatt, Inc. - Hillsboro OR

International Classification:

H01L 31/0232
H01L 31/0224

US Classification:

136256, 136257

Abstract:

The light conversion efficiency of a solar cell () is enhanced by using an optical downshifting layer () in cooperation with a photovoltaic material (). The optical downshifting layer converts photons () having wavelengths in a supplemental light absorption spectrum into photons () having a wavelength in the primary light absorption spectrum of the photovoltaic material. The cost effectiveness and efficiency of solar cells platforms () can be increased by relaxing the range of the primary light absorption spectrum of the photovoltaic material. The optical downshifting layer can be applied as a low cost solution processed film composed of highly absorbing and emissive quantum dot heterostructure nanomaterial embedded in an inert matrix to improve the short wavelength response of the photovoltaic material. The enhanced efficiency provided by the optical downshifting layer permits advantageous modifications to the solar cell platform that enhances its efficiency as well.

US Patent:

20120305860, Dec 6, 2012

Filed:

Jun 28, 2012

Appl. No.:

13/536857

Inventors:

Juanita N. Kurtin - Hillsboro OR, US
Alex R. Guichard - Portland OR, US
Steven M. Hughes - Hillsboro OR, US
Alex C. Mayer - Portland OR, US
Oun Ho Park - Portland OR, US
Shawn R. Scully - Portland OR, US
Paul-Emile B. Trudeau - Portland OR, US
Colin C. Reese - Portland OR, US
Manav Sheoran - Portland OR, US
Georgeta Masson - Portland OR, US

International Classification:

H01B 1/00
H01B 1/10
H01B 1/12
H01B 1/08
B82Y 40/00
B82Y 30/00

US Classification:

2525194, 252500, 977773, 977774, 977890

Abstract:

The light conversion efficiency of a solar cell () is enhanced by using an optical downshifting layer () in cooperation with a photovoltaic material (). The optical downshifting layer converts photons () having wavelengths in a supplemental light absorption spectrum into photons () having a wavelength in the primary light absorption spectrum of the photovoltaic material. The cost effectiveness and efficiency of solar cells platforms () can be increased by relaxing the range of the primary light absorption spectrum of the photovoltaic material. The optical downshifting layer can be applied as a low cost solution processed film composed of highly absorbing and emissive quantum dot heterostructure nanomaterial embedded in an inert matrix to improve the short wavelength response of the photovoltaic material. The enhanced efficiency provided by the optical downshifting layer permits advantageous modifications to the solar cell platform that enhances its efficiency as well.

US Patent:

20130112940, May 9, 2013

Filed:

May 31, 2012

Appl. No.:

13/485756

Inventors:

Juanita Kurtin - Hillsboro OR, US
Matthew J. Carillo - Portland OR, US
Steven Hughes - Hillsboro OR, US

International Classification:

H01L 33/04
H01L 29/06
H01L 21/20
B82Y 40/00
B82Y 99/00

US Classification:

257 13, 257 14, 438478, 257E29005, 257E33008, 257E2109, 977755, 977840

Abstract:

Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell are described. In an example, a semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0. The semiconductor structure also includes a nanocrystalline shell composed of a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core.

US Patent:

20130112941, May 9, 2013

Filed:

May 31, 2012

Appl. No.:

13/485761

Inventors:

Juanita Kurtin - Hillsboro OR, US
Matthew J. Carillo - Portland OR, US
Steven Hughes - Hillsboro OR, US
Brian Theobald - Beaverton OR, US
Colin Reese - Portland OR, US
Georgeta Masson - Lafayette CA, US

International Classification:

H01L 33/06

US Classification:

257 13, 438 47, 257E33008

Abstract:

Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating are described. In an example, a semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0. The semiconductor structure also includes a nanocrystalline shell composed of a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.

US Patent:

20130112942, May 9, 2013

Filed:

May 31, 2012

Appl. No.:

13/485762

Inventors:

Juanita Kurtin - Hillsboro OR, US
Matthew J. Carillo - Portland OR, US
Steven M. Hughes - Walla Walla WA, US
Brian Theobald - Beaverton OR, US
Colin Reese - Portland OR, US
Georgeta Masson - Lafayette CA, US

International Classification:

H01L 33/06

US Classification:

257 13, 438 22, 257E33008

Abstract:

Composites having semiconductor structures embedded in a matrix are described. In an example, a composite includes a matrix material. A plurality of semiconductor structures is embedded in the matrix material. Each semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0. Each semiconductor structure also includes a nanocrystalline shell composed of a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core. An insulator layer encapsulates each nanocrystalline shell and anisotropic nanocrystalline core pairing.

US Patent:

20130206219, Aug 15, 2013

Filed:

Jul 27, 2011

Appl. No.:

13/814210

Inventors:

Juanita N. Kurtin - Hillsboro OR, US
Alex R. Guichard - Durham NC, US
Alex C. Mayer - Portland OR, US
Shawn R. Scully - San Francisco CA, US
Steven M. Hughes - Walla Walla WA, US
Paul-Emile B. Trudeau - Ottawa, CA
Colin C. Reese - Portland OR, US
Manav Sheoran - Beverly MA, US
Georgeta Masson - Lafayette CA, US

International Classification:

H01L 31/06

US Classification:

136255

Abstract:

Photovoltaic cells () of different materials may be integrated at the network () or panel level to optimize independent and cooperative efficiencies and manufacturing techniques of the different materials. The sizes and numbers of the photovoltaic cells () in the separate photovoltaic networks () may differ. Separate fabrication of the different photovoltaic networks () permits optimization of an interlayer material (), which can be insulating or noninsulating and can include one or more of light-scattering or light-emitting particles, photonic crystals, metallic materials, an optical grating, or a refractive index grading. For example, adaptations of increased emitter layer thickness, lower sheet resistance, increased gridline spacing, smoother photovoltaic material surface, and/or increased AR coating thickness are made to a multicrystalline silicon photovoltaic cell () for optimization as a bottom network () of a tandem solar module. In some embodiments, a photovoltaic device includes two component cells, () having substantially similar primary bandgap energies (or absorption spectra), and at least a third component cell () having a different primary bandgap energy.

US Patent:

20130256633, Oct 3, 2013

Filed:

May 28, 2013

Appl. No.:

13/903890

Inventors:

Juanita N. KURTIN - Hillsboro OR, US
Matthew J. CARILLO - Portland OR, US
Steven M. HUGHES - Walla Walla WA, US
Brian THEOBALD - Beaverton OR, US
Colin C. REESE - Portland OR, US
Georgeta MASSON - Lafayette CA, US

International Classification:

H01L 33/06

US Classification:

257 13

Abstract:

Lighting apparatus including a light emitting diode and a plurality of semiconductor structures. Each semiconductor structure includes a quantum dot comprising a nanocrystalline core comprising a first semiconductor material and a nanocrystalline shell comprising a second, different, semiconductor material at least partially surrounding the nanocrystalline core, the quantum dot having a photoluminescence quantum yield (PLQY) of at least 90%. An insulator layer encapsulates the quantum dot.

US Patent:

20130320298, Dec 5, 2013

Filed:

May 28, 2013

Appl. No.:

13/903883

Inventors:

Juanita N. KURTIN - Hillsboro OR, US
Matthew J. CARILLO - Portland OR, US
Steven M. HUGHES - Walla Walla WA, US
Brian THEOBALD - Beaverton OR, US
Colin C. REESE - Portland OR, US
Georgeta MASSON - Lafayette CA, US

International Classification:

H01L 33/04

US Classification:

257 13, 977774

Abstract:

A semiconductor structure comprises a nanocrystalline core of a first semiconductor material, a nanocrystalline shell of a second, different, semiconductor material at least partially surrounding the nanocrystalline core, and an insulator layer encapsulating the nanocrystalline shell and core, wherein an outer surface of the insulator layer is ligand-functionalized.