Steven Francis Leboeuf

US Patent:

6921929, Jul 26, 2005

Filed:

Jun 27, 2003

Appl. No.:

10/609040

Inventors:

Steven Francis LeBoeuf - Schenectady NY, US
Stanton Earl Weaver - Northville NY, US

Assignee:

Lockheed Martin Corporation - Bethesda MD

International Classification:

H01J029/24
H01J001/62
H01L029/24

US Classification:

257100, 257 98, 313512, 313501, 313502, 313503

Abstract:

A lens and encapsulant made of an amorphous fluoropolymer for a light-emitting diode (LED) or diode laser, such as an ultraviolet (UV) LED (UVLED). A semiconductor diode die () is formed by growing a diode () on a substrate layer () such as sapphire. The diode die () is flipped so that it emits light () through the face () of the layer (). An amorphous fluoropolymer encapsulant encapsulates the emitting face of the diode die (), and may be shaped as a lens to form an integral encapsulant/lens. Or, a lens () of amorphous fluoropolymer may be joined to the encapsulant (). Additional joined or separate lenses () may also be used. The encapsulant/lens is transmissive to UV light as well as infrared light. Encapsulating methods are also provided.

US Patent:

7009215, Mar 7, 2006

Filed:

Oct 24, 2003

Appl. No.:

10/693803

Inventors:

Mark Philip D'Evelyn - Niskayuna NY, US
Xian-An Cao - Clifton Park NY, US
Anping Zhang - Niskayuna NY, US
Steven Francis LeBoeuf - Schenectady NY, US
Huicong Hong - Niskayuna NY, US
Kristi Jean Narang - Voorheesville NY, US

Assignee:

General Electric Company - Niskayuna NY

International Classification:

H01L 33/00

US Classification:

257 98, 257 99, 257100, 257102, 257103, 372 98, 372 99

Abstract:

In a method for producing a resonant cavity light emitting device, a seed gallium nitride crystal () and a source material () are arranged in a nitrogen-containing superheated fluid () disposed in a sealed container () disposed in a multiple-zone furnace (). Gallium nitride material is grown on the seed gallium nitride crystal () to produce a single-crystal gallium nitride substrate (′). Said growing includes applying a temporally varying thermal gradient (′) between the seed gallium nitride crystal () and the source material () to produce an increasing growth rate during at least a portion of the growing. A stack of group III-nitride layers () is deposited on the single-crystal gallium nitride substrate (′), including a first mirror sub-stack () and an active region () adapted for fabrication into one or more resonant cavity light emitting devices ().

US Patent:

7053413, May 30, 2006

Filed:

Apr 26, 2004

Appl. No.:

10/831865

Inventors:

Mark Philip D'Evelyn - Niskayuna NY, US
Nicole Andrea Evers - Niskayuna NY, US
Steven Francis LeBoeuf - Schenectady NY, US
Xian-An Cao - Clifton Park NY, US
An-Ping Zhang - Niskaryuna NY, US

Assignee:

General Electric Company - Niskayuna NY

International Classification:

H01L 27/15

US Classification:

257 79, 257 86, 257 94, 257103

Abstract:

A light emitting device, such as a light emitting diode or a laser diode. The light emitting device comprises a light emitting semiconductor active region disposed on a substrate. The substrate comprises an optical absorption coefficient below about 100 cmat wavelengths between 700 and 465 nm a GaN single crystal having a dislocation density of less than 10per cmand an optical absorption coefficient below about 100 cmat wavelengths between 700 and 465 nm. A method of making such a light emitting device is also provided.

US Patent:

7078731, Jul 18, 2006

Filed:

Dec 13, 2004

Appl. No.:

11/010507

Inventors:

Mark Philip D'Evelyn - Niskayuna NY, US
Steven Francis LeBoeuf - Schenectady NY, US
Larry Burton Rowland - Scotia NY, US
Kristi Jean Narang - Voorheeesville NY, US
Huicong Hong - Niskayuna NY, US
Stephen Daley Arthur - Glenville NY, US
Peter Micah Sandvik - Clifton Park NY, US

Assignee:

General Electric Company - Niskayuna NY

International Classification:

H01L 33/00

US Classification:

257 94, 257103

Abstract:

A GaN crystal having up to about 5 mole percent of at least one of aluminum, indium, and combinations thereof. The GaN crystal has at least one grain having a diameter greater than 2 mm, a dislocation density less than about 10cm, and is substantially free of tilt boundaries.

US Patent:

7098487, Aug 29, 2006

Filed:

Dec 27, 2002

Appl. No.:

10/329981

Inventors:

Mark Philip D'Evelyn - Niskayuna NY, US
Steven LeBoeuf - Schenectady NY, US
Larry Rowland - Scotia NY, US
Kristi Narang - Voorheesville NY, US
Huicong Hong - Niskayuna NY, US
Peter M. Sandvik - Guilderland NY, US

Assignee:

General Electric Company - Niskayuna NY

International Classification:

H01L 33/00

US Classification:

257103, 257 22, 257 64, 257613

Abstract:

There is provided a GaN single crystal at least about 2 millimeters in diameter, with a dislocation density less than about 10cm, and having no tilt boundaries. A method of forming a GaN single crystal is also disclosed. The method includes providing a nucleation center, a GaN source material, and a GaN solvent in a chamber. The chamber is pressurized. First and second temperature distributions are generated in the chamber such that the solvent is supersaturated in the nucleation region of the chamber. The first and second temperature distributions have different temperature gradients within the chamber.

US Patent:

7119372, Oct 10, 2006

Filed:

Oct 24, 2003

Appl. No.:

10/693126

Inventors:

Edward B. Stokes - Charlotte NC, US
Mark P. D'Evelyn - Niskayuna NY, US
Stanton E. Weaver - Northville NY, US
Peter M. Sandvik - Albany NY, US
Abasifreke U. Ebong - Clifton Park NY, US
Xian-an Cao - Clifton Park NY, US
Steven F. LeBoeuf - Schenectady NY, US
Nikhil R. Taskar - Scarsdale NY, US

Assignee:

GELcore, LLC - Valley View OH

International Classification:

H01L 27/15

US Classification:

257 79, 257104, 257 86, 257 94, 257 98, 257103, 257 13, 257 96, 257778

Abstract:

A flip chip light emitting diode die (″) includes a light-transmissive substrate (″) and semiconductor layers (″) that are selectively patterned to define a device mesa (″). A reflective electrode (″) is disposed on the device mesa (″). The reflective electrode (″) includes a light-transmissive insulating grid () disposed over the device mesa (″), an ohmic material () disposed at openings of the insulating grid () and making ohmic contact with the device mesa (″), and an electrically conductive reflective film (″) disposed over the insulating grid () and the ohmic material (). The electrically conductive reflective film (″) electrically communicates with the ohmic material ().

US Patent:

7122827, Oct 17, 2006

Filed:

Oct 15, 2003

Appl. No.:

10/686136

Inventors:

Azar Alizadeh - Wilton NY, US
Pradeep Sharma - Saratoga Springs NY, US
Steven Francis LeBoeuf - Schenectady NY, US
Suryaprakash Ganti - Guilderland NY, US
Mark Philip D'Evelyn - Niskayuna NY, US
Kenneth Roger Conway - Clifton Park NY, US
Peter Micah Sandvik - Guilderland NY, US
Loucas Tsakalakos - Niskayuna NY, US

Assignee:

General Electric Company - Schenectady NY

International Classification:

H01L 29/06

US Classification:

257 17, 257 14, 257 22

Abstract:

The present invention is directed toward a method for fabricating low-defect nanostructures of wide bandgap materials and to optoelectronic devices, such as light emitting sources and lasers, based on them. The invention utilizes nanolithographically-defined templates to form nanostructures of wide bandgap materials that are energetically unfavorable for dislocation formation. In particular, this invention provides a method for the fabrication of phosphor-less monolithic white light emitting diodes and laser diodes that can be used for general illumination and other applications.

US Patent:

7145178, Dec 5, 2006

Filed:

Dec 14, 2004

Appl. No.:

11/011729

Inventors:

Edward Brittain Stokes - Niskayuna NY, US
Danielle Marie Walker - Clifton Park NY, US
Xian-an Cao - Clifton Park NY, US
Steven Francis LeBoeuf - Schenectady NY, US

Assignee:

General Electric Company - Niskayuna NY

International Classification:

H01L 27/15
H01L 29/06

US Classification:

257 79, 257 14

Abstract:

A method for increasing carrier concentration in a semiconductor includes providing a group III nitride semiconductor device, determining a wavelength that increases carrier concentration in the semiconductor device, and directing at least one infrared light source, at the determined wavelength, into a semiconductor device excitation band.