Steven E Lester

US Patent:

20210126164, Apr 29, 2021

Filed:

Oct 27, 2020

Appl. No.:

17/081935

Inventors:

- Menlo Park CA, US
David HWANG - Waterloo, CA
Steven David LESTER - Redmond WA, US
Anurag TYAGI - Kirkland WA, US
Michael GRUNDMANN - Kirkland WA, US
Guillaume LHEUREUX - Cork, IE
Alexander TONKIKH - Cork, IE

International Classification:

H01L 33/30
H01L 33/00
H01L 33/06
H01L 25/075

Abstract:

A light source includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the p-type semiconductor layer and the n-type semiconductor layer and configured to emit light. The active region includes a plurality of barrier layers and one or more quantum well layers. The plurality of barrier layers of the active region includes at least one n-doped barrier layer that includes an n-type dopant. The active region is characterized by a lateral linear dimension equal to or less than about 10 μm. The n-type dopant includes, for example, silicon, selenium, or tellurium.