Steven C Maxwell

US Patent:

7786015, Aug 31, 2010

Filed:

Apr 28, 2008

Appl. No.:

12/149151

Inventors:

Yung-Tin Chen - Santa Clara CA, US
Chun-Ming Wang - Fremont CA, US
Steven J. Radigan - Fremont CA, US
Christopher J. Petti - Mountain View CA, US
Steven Maxwell - Sunnyvale CA, US

Assignee:

SanDisk 3D LLC - Milpitas CA

International Classification:

H01L 21/311

US Classification:

438703, 438702, 438759, 438128, 438129, 438130, 257774, 257E2164, 257E21453, 257E21585, 257E21626, 216 41

Abstract:

A method of making a semiconductor device includes forming at least one device layer over a substrate, forming at least two spaced apart features over the at least one device layer, forming sidewall spacers on the at least two features, selectively removing the spaced apart features, filling a space between a first sidewall spacer and a second sidewall spacer with a filler feature, selectively removing the sidewall spacers to leave a plurality of the filler features spaced apart from each other, and etching the at least one device layer using the filler feature as a mask.

US Patent:

7846756, Dec 7, 2010

Filed:

Dec 31, 2008

Appl. No.:

12/318590

Inventors:

Bing K. Yen - Cupertino CA, US
Chun-Ming Wang - Fremont CA, US
Yung-Tin Chen - Santa Clara CA, US
Steven Maxwell - Sunnyvale CA, US

Assignee:

SanDisk 3D LLC - Milpitas CA

International Classification:

H01L 21/00

US Classification:

438 42, 438 39, 438696, 438699, 438702, 438703

Abstract:

A method of making a device is disclosed including: forming a first hard mask layer over an underlying layer; forming a first imprint resist layer over the underlying layer; forming first features over the first hard mask layer by bringing a first imprint template in contact with the first imprint resist layer; forming a first spacer layer over the first features; etching the first spacer layer to form a first spacer pattern and to expose top of the first features; removing the first features; patterning the first hard mask, using the first spacer pattern as a mask, to form first hard mask features; and etching at least part of the underlying layer using the first hard mask features as a mask.

US Patent:

7846782, Dec 7, 2010

Filed:

Sep 28, 2007

Appl. No.:

11/864532

Inventors:

Steven Maxwell - Sunnyvale CA, US
Michael Konevecki - San Jose CA, US
Mark H. Clark - Santa Clara CA, US
Usha Raghuram - San Jose CA, US

Assignee:

SanDisk 3D LLC - Milpitas CA

International Classification:

H01L 21/82

US Classification:

438131, 257530, 257 50, 257390, 257209, 257142

Abstract:

A method of making a non-volatile memory device includes providing a substrate having a substrate surface, and forming a non-volatile memory array over the substrate surface. The non-volatile memory array includes an array of semiconductor diodes, and each semiconductor diode of the array of semiconductor diodes is disposed substantially parallel to the substrate surface.

US Patent:

7927977, Apr 19, 2011

Filed:

Jul 15, 2009

Appl. No.:

12/458543

Inventors:

Raghuveer S. Makala - Sunnyvale CA, US
Vance Dunton - San Jose CA, US
Yoichiro Tanaka - Santa Clara CA, US
Steven Maxwell - Sunnyvale CA, US
Tong Zhang - Palo Alto CA, US
Steven J. Radigan - Fremont CA, US

Assignee:

SanDisk 3D LLC - Milpitas CA

International Classification:

H01L 21/20
H01L 21/36

US Classification:

438478, 257E21017, 257E2109, 257E21102, 438 44, 438360, 438488, 438496, 438700

Abstract:

A method of making a semiconductor device includes forming a first layer comprising a seed material over an underlying layer, forming a second layer comprising a sacrificial material over the first layer, the sacrificial material being different from the seed material, patterning the first layer and the second layer into a plurality of separate features, forming an insulating filling material between the plurality of the separate features, removing the sacrificial material from the separate features to form a plurality of openings in the insulating filling material such that the seed material is exposed in the plurality of openings, and growing a semiconductor material on the exposed seed material in the plurality of openings.

US Patent:

8076056, Dec 13, 2011

Filed:

Oct 6, 2008

Appl. No.:

12/285466

Inventors:

Chun-Ming Wang - Fremont CA, US
Steven Maxwell - Sunnyvale CA, US
Paul Wai Kie Poon - Fremont CA, US
Yung-Tin Chen - Santa Clara CA, US

Assignee:

SanDisk 3D LLC - Milpitas CA

International Classification:

G03F 7/26

US Classification:

430313

Abstract:

A method of making a device includes forming an underlying mask layer over an underlying layer, forming a first mask layer over the underlying mask layer, patterning the first mask layer to form first mask features, undercutting the underlying mask layer to form underlying mask features using the first mask features as a mask, removing the first mask features, and patterning the underlying layer using at least the underlying mask features as a mask.

US Patent:

8183121, May 22, 2012

Filed:

Mar 31, 2009

Appl. No.:

12/415011

Inventors:

April D. Schricker - Palo Alto CA, US
Steven Maxwell - Sunnyvale CA, US

Assignee:

SanDisk 3D LLC - Milpitas CA

International Classification:

H01L 21/20
H01L 29/00

US Classification:

438381, 257528

Abstract:

Methods in accordance with aspects of this invention form microelectronic structures in accordance with other aspects this invention, such as non-volatile memories, that include (1) a bottom electrode, (2) a resistivity-switchable layer disposed above and in contact with the bottom electrode, and (3) a top electrode disposed above and in contact with the resistivity-switchable layer; wherein the resistivity-switchable layer includes a carbon-based material and a dielectric filler material. Numerous additional aspects are provided.

US Patent:

8268678, Sep 18, 2012

Filed:

Nov 18, 2010

Appl. No.:

12/949056

Inventors:

Steven Maxwell - Sunnyvale CA, US
Michael Konevecki - San Jose CA, US
Mark H. Clark - Santa Clara CA, US
Usha Raghuram - San Jose CA, US

Assignee:

SanDisk 3D LLC - Milpitas CA

International Classification:

H01L 21/82

US Classification:

438131, 257202

Abstract:

A method of making a non-volatile memory device includes providing a substrate having a substrate surface, and forming a non-volatile memory array over the substrate surface. The non-volatile memory array includes an array of semiconductor diodes, and each semiconductor diode of the array of semiconductor diodes is disposed substantially parallel to the substrate surface.

US Patent:

8389375, Mar 5, 2013

Filed:

Feb 11, 2010

Appl. No.:

12/703907

Inventors:

Steven Maxwell - Sunnyvale CA, US

Assignee:

SanDisk 3D LLC - Milpitas CA

International Classification:

H01L 29/93
G11C 11/21

US Classification:

438397, 438255

Abstract:

In a first aspect, a method of forming a memory cell is provided, the method including: (1) forming a pillar above a substrate, the pillar comprising a steering element and a metal hardmask layer; (2) selectively removing the metal hardmask layer to create a void; and (3) forming a carbon-based switching material within the void. Numerous other aspects are provided.