Steven D Mcclure

US Patent:

6509589, Jan 21, 2003

Filed:

Jun 14, 1999

Appl. No.:

09/332599

Inventors:

Larry M. Tichauer - La Palma CA
Steven S. McClure - Long Beach CA

Assignee:

Hughes Electronics Corp. - El Segundo CA

International Classification:

H01L 2980

US Classification:

257270, 257365, 257391

Abstract:

A compensation circuit and method for compensating for the threshold shift in an irradiated MOSFET. The method determines the gate threshold voltage to body voltage relationship to vary the body voltage with radiation. The compensation circuit has at least one MOSFET having the same channel type as the MOSFET being compensated. The at least one matching MOSFET is connected to the gate of the MOSFET being compensated. At least one MOSFET having a channel type that is different from the channel type of the MOSFET being compensated is connected to the gate of the matching MOSFET. The result is that the compensation circuit controls a negative shift in the body voltage of the MOSFET being compensated resulting in a higher threshold voltage.

US Patent:

6600241, Jul 29, 2003

Filed:

Aug 23, 2002

Appl. No.:

10/226381

Inventors:

Larry M. Tichauer - La Palma CA
Steven S. McClure - La Crescenta CA

Assignee:

The Boeing Company - Chicago IL

International Classification:

H05B 3702

US Classification:

307117, 307297, 307308, 307304, 307307

Abstract:

A compensation circuit and method for compensating for the threshold shift in an irradiated MOSFET. The method determines the gate threshold voltage to body voltage relationship to vary the body voltage with radiation. The compensation circuit ( ) has at least one MOSFET (Q ) having the same channel type as the MOSFET being compensated (Q ). The at least one matching MOSFET (Q ) is connected to the gate of the MOSFET (Q ) being compensated. At least one MOSFET (Q , Q ) having a channel type that is different from the channel type of the MOSFET (Q ) being compensated is connected to the gate of the matching MOSFET (Q ). The result is that the compensation circuit ( ) controls a negative shift in the body voltage of the MOSFET (Q ) being compensated resulting in a higher threshold voltage.

US Patent:

20130290542, Oct 31, 2013

Filed:

Apr 30, 2013

Appl. No.:

13/874015

Inventors:

Scott Alan Leerssen - Atlanta GA, US
Steven Keith McClure - Mableton GA, US
Gregory Allen Jednaszewski - Mableton GA, US

Assignee:

Racemi, Inc. - Atlanta GA

International Classification:

H04L 29/08

US Classification:

709226

Abstract:

Systems and methods for migrating a server image between any physical, virtual, and cloud servers. The system includes a deploy agent that is run on the target server, a migration manager to control operations, an image library for optional long-term storage of the image, and mailbox-based communications mechanism to support management operations spanning multiple data centers and firewalls. While deploying an image to the target server, the deploy agent automatically adjusts the image to account for changes in server hardware, storage layout, and network infrastructure to ensure that any applications within the image continue to function properly.

US Patent:

57743185, Jun 30, 1998

Filed:

Nov 27, 1996

Appl. No.:

8/753647

Inventors:

Steven W. McClure - Playa Del Rey CA
Lloyd F. Linder - Agoura Hills CA

Assignee:

Raytheon Company - Lexington MA

International Classification:

H02H 900

US Classification:

361 56

Abstract:

A power supply terminal clamping circuit for use in an integrated circuit protects positive and negative voltage power supply terminals from both overvoltage and ESD events. A diode stack is connected between a protected power supply terminal and ground, with the number of diodes in the stack establishing a clamping voltage. The stack becomes forward-biased when the voltage on the protected terminal reaches the clamping voltage, which triggers a switch that provides a current path between the terminal and ground that clamps the terminal voltage. A bipolar transistor embodiment includes a diode stack made from diode-connected bipolar transistors and a bipolar Darlington pair switch.