Steven Todd Rogers

US Patent:

46564977, Apr 7, 1987

Filed:

Oct 3, 1985

Appl. No.:

6/783717

Inventors:

Steven H. Rogers - Midwest City OK
Randall S. Mundt - Colorado Springs CO
Denise A. Kaya - Woodland Park CO

Assignee:

NCR Corporation - Dayton OH

International Classification:

H01L 2704
H01L 2934
H01L 2904
H01L 2978

US Classification:

357 50

Abstract:

A method for forming trench isolation oxide using doped silicon dioxide which is reflowed at elevated temperatures to collapse any voids therein and produce surface planarity. An underlying layered composite selected from oxide, polysilicon and silicon nitride permits the formation and reflow of the doped isolation oxide and remains in place in the trench to contribute to the trench isolation structure.

US Patent:

57375194, Apr 7, 1998

Filed:

Aug 22, 1995

Appl. No.:

8/518105

Inventors:

Ghassan Maurice Abdelnour - Oklahoma City OK
Steven Hill Rogers - Norman OK
Horace David Chandler - Oklahoma City OK

Assignee:

Seagate Technology, Inc. - Scotts Valley CA

International Classification:

G06F 1134

US Classification:

39518315

Abstract:

Apparatus and method for the early detection of faults in a head-disc assembly (HDA) from a disc drive manufacturing process. Parametrics are obtained from an HDA at a parametric station and provided to a pattern recognition system for estimating an error rate category from the measured HDA parametrics. The estimated error rate category and the parametrics are provided to a fuzzy inferencing system, which uses linguistic rules to classify the HDA as GOOD, MARGINAL or BAD, based upon the parametrics and the estimated error rate category. HDAs classified as GOOD or MARGINAL continue processing through dynamic burn-in (DBI), while HDAs classified as BAD are subjected to rework. The pattern recognition system includes a reference database containing historical parametric and associated error rate data, which is updated over time by the subsequent inclusion of selected parametrics and measured error rates for HDAs subjected to DBI.

US Patent:

46303570, Dec 23, 1986

Filed:

Aug 2, 1985

Appl. No.:

6/761945

Inventors:

Steven H. Rogers - Midwest City OK
Thomas J. Hwang - Fremont CA

Assignee:

NCR Corporation - Dayton OH

International Classification:

H01L 21285
H01L 2188

US Classification:

29590

Abstract:

A method of forming improved contacts between interconnect layers of an integrated circuit including sputter depositing a metallic lower layer of interconnect material on a target, and patterning the layer of interconnect material to form an interconnect layer. A dielectric layer is then deposited over the interconnect layer, and via holes are formed through the dielectric layer. A polysilicon layer is deposited over the dielectric layer, including the side walls and bottom of the via holes, and then removed from the dielectric layer and the bottom of the via holes, by anisotropic etching, leaving polysilicon on the side walls. Tungsten is then selectively deposited on the bottom and side walls of the via holes forming metal plugs therein, and a second layer of interconnect material is sputter deposited over the dielectric layer and the metal plugs in the via holes thereby forming contacts between the first and second layers of interconnect material.

US Patent:

45718199, Feb 25, 1986

Filed:

Nov 1, 1984

Appl. No.:

6/667181

Inventors:

Steven H. Rogers - Midwest City OK
Randall S. Mundt - Colorado Springs CO
Denise A. Kaya - Woodland Park CO

Assignee:

NCR Corporation - Dayton OH

International Classification:

H01L 2195

US Classification:

29576W

Abstract:

A method for forming trench isolation oxide using doped silicon dioxide which is reflowed at elevated temperatures to collapse any voids therein and produce surface planarity. An underlying layered composite selected from oxide, polysilicon and silicon nitride permits the formation and reflow of the doped isolation oxide and remains in place in the trench to contribute to the trench isolation structure.