Steven J Shannon

US Patent:

6667577, Dec 23, 2003

Filed:

Dec 18, 2001

Appl. No.:

10/025408

Inventors:

Steven Shannon - San Mateo CA
Daniel Hoffman - Saratoga CA
Chunshi Cui - San Jose CA
Yan Ye - Saratoga CA
Gerardo Delgadino - Santa Clara CA
Shiang-Bau Wang - Hsinchu, TW
Robert B. Hagen - Newark CA
Matthew L Miller - Newark CA
Stephen Thai - Milpitas CA

Assignee:

Applied Materials, Inc - Santa Clara CA

International Classification:

H01J 724

US Classification:

31511121, 31511181, 118723 I

Abstract:

An RF power applicator of the reactor includes inner and outer conductive radial spokes. The set of inner conductive spokes extends radially outwardly from and is electrically connected to the conductive post toward the conductive side wall. The set of outer conductive spokes extends radially inwardly toward the conductive post from and is electrically connected to the conductive side wall. In this way, the inner and outer sets of conductive spokes are electrically connected together, the combination of the inner and outer set of spokes with the conductive enclosure having a fundamental resonant frequency inversely proportional to the height of the conductive enclosure and the lengths of the inner and outer set of conductive spokes. An RF source power generator is coupled across the RF power applicator and has an RF frequency corresponding to the fundamental resonant frequency.

US Patent:

6879870, Apr 12, 2005

Filed:

Apr 16, 2002

Appl. No.:

10/124191

Inventors:

Steven C. Shannon - San Mateo CA, US
Daniel J. Hoffman - Saratoga CA, US
Michael Barnes - San Ramon CA, US
Lee LaBlanc - Sunnyvale CA, US

International Classification:

G01F019/00

US Classification:

700121

Abstract:

A method and apparatus for routing harmonic energy within a plasma to ground in a plasma enhanced semiconductor wafer processing reactor. A model of the chamber is used to determine the pathway for RF power and the harmonic energy of that RF power through the chamber. From this model, the placement and design of a harmonic routing circuit is determined to shunt the harmonic energy to ground.

US Patent:

7286948, Oct 23, 2007

Filed:

Jun 16, 2006

Appl. No.:

11/424705

Inventors:

Steven C. Shannon - San Mateo CA, US
Daniel J. Hoffman - Saratoga CA, US
Jeremiah T. P. Pender - San Jose CA, US
Tarreg Mawari - Manassas VA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G01R 23/16

US Classification:

702 76, 702118, 118712, 15634524, 15634528, 216 59, 216 61, 700108, 700121, 438 9

Abstract:

Methods for determining characteristics of a plasma are provided. In one embodiment, a method for determining characteristics of a plasma includes obtaining metrics of current and voltage information for first and second waveforms coupled to a plasma at different frequencies, determining at least one characteristic of the plasma using the metrics obtained from each different frequency waveform. In another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, and determining at least one characteristic of a plasma using model. In yet another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, measuring current and voltage for waveforms coupled to the plasma and having at least two different frequencies, and determining ion mass of a plasma from model and the measured current and voltage of the waveforms.

US Patent:

7326872, Feb 5, 2008

Filed:

Aug 26, 2004

Appl. No.:

10/927382

Inventors:

Steven C. Shannon - San Mateo CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B23K 10/00

US Classification:

21912141, 21912143, 118723 I, 15634547

Abstract:

In one implementation, a method is provided for testing a plasma reactor multi-frequency matching network comprised of multiple matching networks, each of the multiple matching networks having an associated RF power source and being tunable within a tunespace. The method includes providing a multi-frequency dynamic dummy load having a frequency response within the tunespace of each of the multiple matching networks at an operating frequency of its associated RF power source. The method further includes characterizing a performance of the multi-frequency matching network based on a response of the multi-frequency matching network while simultaneously operating at multiple frequencies. In one embodiment, a plasma reactor multi-frequency dynamic dummy load is provided that is adapted for a multi-frequency matching network having multiple matching networks. Each of the multiple matching networks being tunable within a tunespace. The plasma reactor dynamic dummy load being capable of simultaneously providing a frequency response within the tunespace of each of the multiple matching networks at the operating frequency of its associated RF power source.

US Patent:

7431857, Oct 7, 2008

Filed:

May 12, 2004

Appl. No.:

10/843914

Inventors:

Steven C. Shannon - San Mateo CA, US
Alex Paterson - San Jose CA, US
Theodoros Panagopoulos - Santa Clara CA, US
John P. Holland - San Jose CA, US
Dennis Grimard - Ann Arbor MI, US
Yashushi Takakura - Chiba, JP

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G01R 31/00

US Classification:

216 59, 216 61, 216 67, 438706, 438710, 438714

Abstract:

A method and apparatus for generating and controlling a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method includes the steps of supplying a first RF signal from the source to an electrode within the processing chamber at a first frequency and supplying a second RF signal from the source to the electrode within the processing chamber at a second frequency. The second frequency is different from the first frequency by an amount equal to a desired frequency. Characteristics of a plasma formed in the chamber establish a sheath modulation at the desired frequency.

US Patent:

7440859, Oct 21, 2008

Filed:

Dec 29, 2006

Appl. No.:

11/617802

Inventors:

Steven C. Shannon - San Mateo CA, US
Daniel J. Hoffman - Saratoga CA, US
Jeremiah T. P. Pender - San Jose CA, US
Tarreg Mawari - Manassas VA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G01R 23/16

US Classification:

702 76, 702118, 118712, 15634524, 15634528, 216 59, 216 61, 700108, 700121, 438 9

Abstract:

Methods for determining characteristics of a plasma are provided. In one embodiment, a method for determining characteristics of a plasma includes obtaining metrics of a plasma at two different frequencies, and determining at least one characteristic of the plasma utilizing the metrics. In another embodiment, a method for determining characteristics of a plasma includes obtaining metrics of current and voltage information for first and second waveforms coupled to a plasma at different frequencies, determining at least one characteristic of the plasma using the metrics obtained from each different frequency waveform. In another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, and determining at least one characteristic of a plasma using model.

US Patent:

7510665, Mar 31, 2009

Filed:

May 2, 2006

Appl. No.:

11/416468

Inventors:

Steven C. Shannon - San Mateo CA, US
Alexander Paterson - San Jose CA, US
Theodoros Panagopoulos - San Jose CA, US
John P. Holland - San Jose CA, US
Dennis S. Grimard - Ann Arbor MI, US
Daniel J. Hoffman - Saratoga CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G01R 31/00

US Classification:

216 59, 216 61, 216 67, 438706, 438710, 438714

Abstract:

A method for controlling a plasma in a semiconductor substrate processing chamber is provided. The method includes the steps of supplying a first RF signal to a first electrode within the processing chamber at a first frequency selected to cause plasma sheath oscillation at the first frequency; and supplying a second RF signal from the source to the first electrode at a second frequency selected to cause plasma sheath oscillation at the second frequency, wherein the second frequency is different from the first frequency by a differential equal to a desired frequency selected to cause plasma sheath oscillation at the desired frequency.

US Patent:

7554334, Jun 30, 2009

Filed:

Sep 28, 2006

Appl. No.:

11/536197

Inventors:

Steven C. Shannon - San Mateo CA, US
Daniel J. Hoffman - Saratoga CA, US
Steven Lane - San Jose CA, US
Walter R. Merry - Sunnyvale CA, US
Jivko Dinev - Cupertino CA, US

Assignee:

Applied Marterials, Inc. - Santa Clara CA

International Classification:

G01R 31/02

US Classification:

324535, 324600, 333 32

Abstract:

Embodiments of a method of calculating the equivalent series resistance of a matching network using variable impedance analysis and matching networks analyzed using the same are provided herein. In one embodiment, a method of calculating the equivalent series resistance of a matching network includes the steps of connecting the matching network to a load; measuring an output of the matching network over a range of load impedances; and calculating the equivalent series resistance of the matching network based upon a relationship between the measured output and the load resistance. The load may be a surrogate load or may be a plasma formed in a process chamber.