Steven Cole Watts

US Patent:

8546896, Oct 1, 2013

Filed:

Nov 6, 2010

Appl. No.:

12/941031

Inventors:

Daniel Lottis - Sunnyvale CA, US
Eugene Youjun Chen - Fremont CA, US
Xueti Tang - Fremont CA, US
Steven M. Watts - Mountain View CA, US

Assignee:

Grandis, Inc. - San Jose CA

International Classification:

H01L 29/82

US Classification:

257421, 257E29323

Abstract:

A method and system for providing a magnetic substructure usable in a magnetic device, as well as a magnetic element and memory using the substructure are described. The magnetic substructure includes a plurality of ferromagnetic layers and a plurality of nonmagnetic layers. The plurality of ferromagnetic layers are interleaved with the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are immiscible with and chemically stable with respect to the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are substantially free of a magnetically dead layer-producing interaction with the plurality of nonmagnetic layers. Further, the plurality of nonmagnetic layers induce a perpendicular anisotropy in the plurality of ferromagnetic layers. The magnetic substructure is configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic substructure.

US Patent:

20110031569, Feb 10, 2011

Filed:

May 7, 2010

Appl. No.:

12/776331

Inventors:

Steven M. Watts - Mountain View CA, US
Zhitao Diao - Fremont CA, US
Xueti Tang - Fremont CA, US

Assignee:

GRANDIS, INC. - Milpitas CA

International Classification:

H01L 29/82
H01L 21/00

US Classification:

257421, 438 3, 257E29323, 257E21002

Abstract:

A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.

US Patent:

20110032644, Feb 10, 2011

Filed:

Aug 10, 2009

Appl. No.:

12/538489

Inventors:

Steven M. Watts - Mountain View CA, US
Zhitao Diao - Fremont CA, US
Xueti Tang - Fremont CA, US

Assignee:

GRANDIS, INC. - Milpitas CA

International Classification:

G11B 5/127

US Classification:

36032412, G9B 504

Abstract:

A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.

US Patent:

20120155156, Jun 21, 2012

Filed:

Feb 25, 2011

Appl. No.:

13/035726

Inventors:

Steven M. Watts - Mountain View CA, US
Zhitao Diao - Fremont CA, US
Xueti Tang - Fremont CA, US
Kiseok Moon - Pleasanton CA, US
Mohamad Towfik Krounbi - San Jose CA, US

Assignee:

Grandis, Inc. - Milpitas CA

International Classification:

G11C 11/02
G11B 5/84
G11B 5/64

US Classification:

365158, 428826, 427123

Abstract:

A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.

US Patent:

20120261776, Oct 18, 2012

Filed:

Dec 20, 2011

Appl. No.:

13/332328

Inventors:

Xueti Tang - Fremont CA, US
Vladimir Nikitin - Campbell CA, US
Dmytro Apalkov - San Jose CA, US
Kiseok Moon - Pleasanton CA, US
Steven M. Watts - Mountain View CA, US

Assignee:

Samsung Electronics Co., LTD. - Gyeonggi-Do

International Classification:

H01L 29/82
H01L 21/18

US Classification:

257421, 438 3, 257E29323, 257E21085

Abstract:

A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, and at least one damping reduction layer. The free layer has an intrinsic damping constant. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one damping reduction layer is adjacent to at least a portion of the free layer and configured to reduce the intrinsic damping constant of the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

US Patent:

20130154036, Jun 20, 2013

Filed:

Dec 20, 2011

Appl. No.:

13/332305

Inventors:

Xueti Tang - Fremont CA, US
Dmytro Apalkov - San Jose CA, US
Steven M. Watts - Mountain View CA, US
Kiseok Moon - Pleasanton CA, US
Vladimir Nikitin - Campbell CA, US

Assignee:

Samsung Electronics Co., LTD. - Gyeonggi-Do

International Classification:

H01L 43/10
H01L 43/12

US Classification:

257421, 438 3, 257E43005, 257E43006

Abstract:

A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, at least one insulating layer, and at least one magnetic insertion layer adjoining the at least one insulating layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one insulating layer is adjacent to at least one of the free layer and the pinned layer. The at least one magnetic insertion layer adjoins the at least one insulating layer. In some aspects, the insulating layer(s) include at least one of magnesium oxide, aluminum oxide, tantalum oxide, ruthenium oxide, titanium oxide, and nickel oxide The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

US Patent:

57489521, May 5, 1998

Filed:

May 10, 1995

Appl. No.:

8/438558

Inventors:

Atul Chadha - Milpitas CA
Donald J. Haderle - Los Gatos CA
Akira Shibamiya - Los Altos CA
Robert W. Lyle - San Jose CA
Steven J. Watts - San Jose CA

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G06F 1730

US Classification:

395602

Abstract:

The present invention provides a system and method for utilizing the proximity of keys in sequential or near sequential index probes to avoid complete index tree traversal. Page information from three pages (LAST, PARENT and NEXT) are stored in separate information fields within an Index Lookaside Buffer. The LAST information field contains information on the most recent leaf page accessed during an index probe in a read key or an insert key operation, the PARENT information field contains information on the parent page of the most recently accessed leaf page described in the LAST information field, and the NEXT information field contains information on the most recent leaf page accessed during a fetch-next key or delete key operation. On a subsequent index probe, the LAST, NEXT and PARENT information fields are sequentially analyzed to determine if the search key is contained within the leaf page described by the LAST or NEXT information fields or if the search key is contained within one of the leaf pages pointed to by the parent page described by the PARENT information field. If none of the LAST, NEXT or PARENT information fields identify the leaf page containing the search key then the default root-to-leaf traversal would commence.

US Patent:

60385626, Mar 14, 2000

Filed:

Sep 5, 1996

Appl. No.:

8/708512

Inventors:

Vaishnavi Anjur - Emeryville CA
Atul Chadha - Milpitas CA
Piyush Goel - Monte Sereno CA
Balakrishna Raghavendra Iyer - San Jose CA
Venkatachary Srinivasan - Santa Clara CA
Steven John Watts - Morgan Hill CA

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G06F 1730

US Classification:

707 10

Abstract:

Many web applications require access to a relational database. The requirements of such web applications are different from conventional applications that access a database. Web applications need to have selective recoverability and need to have support for different transaction structures, other than the flat transaction structure of conventional database applications, including nested and chained transactions. To achieve this, an interface between the application and database has the following functional features: 1) the interface to the database is connection oriented, i. e. , the connection is retained across several invocations of the application; 2) the backend of the interface is long living, i. e. , it exists across multiple invocations; 3) state information about a session in progress is maintained, and more specifically, it is distributed between the backend of the interface and the hidden fields of the HTML output document.