Search

Steven Cole Watts

age ~73

from Lawrence, KS

Also known as:
  • Steven C Watts
Phone and address:
1649 Edgehill Rd, Lawrence, KS 66044

Steven Watts Phones & Addresses

  • 1649 Edgehill Rd, Laurence, KS 66044
  • Lawrence, KS
  • Oakland, CA
  • Kihei, HI
  • Wailuku, HI
  • Olathe, KS
  • Kula, HI
  • Greensburg, KS

Isbn (Books And Publications)

The People's Tycoon : Henry Ford and the American Century

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Author
Steven Watts

ISBN #
0375407359

The People's Tycoon: Henry Ford And the American Century

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Author
Steven Watts

ISBN #
0375707255

The Magic Kingdom: Walt Disney and the American Way of Life

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Author
Steven Watts

ISBN #
0395835879

The Republic Reborn: War and the Making of Liberal America, 1790-1820

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Author
Steven Watts

ISBN #
0801834201

The Republic Reborn: War and the Making of Liberal America, 1790-1820

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Author
Steven Watts

ISBN #
0801839416

The Romance of Real Life: Charles Brockden Brown and the Origins of American Culture

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Author
Steven Watts

ISBN #
0801846862

The Magic Kingdom: Walt Disney and the American Way of Life

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Author
Steven Watts

ISBN #
0826213790

License Records

Steven Charles Watts

License #:
21355 - Expired
Issued Date:
Dec 7, 2001
Renew Date:
Jun 1, 2004
Expiration Date:
May 31, 2006
Type:
Certified Public Accountant
Name / Title
Company / Classification
Phones & Addresses
Steven D Watts
Town & Country Ford Pell City, LLC
REAL/PERSONAL PROPERTY
Steven D Watts
Town & Country Ford, LLC
ANY LAWFUL ACTIVITY
Steven Watts
Lafayette Autoworks, LLC
Auto Service and Repair · Auto Repair
2040 N Main St, Walnut Creek, CA 94596
(925)9321447
Steven E. Watts
WATTS RESTAURANT LLC
Steven L. Watts
ETHEARENT, LLC
Steven R. Watts
EBS FIRST LIEN FUND, LLC
Steven R Watts
THE CONNOR GROUP REAL ESTATE INCOME AND GROWTH FUND XI, LLC
Steven R Watts
DIGITRON-CMI, LLC

Us Patents

  • Magnetic Tunneling Junction Elements Having Magnetic Substructures(S) With A Perpendicular Anisotropy And Memories Using Such Magnetic Elements

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  • US Patent:
    8546896, Oct 1, 2013
  • Filed:
    Nov 6, 2010
  • Appl. No.:
    12/941031
  • Inventors:
    Daniel Lottis - Sunnyvale CA, US
    Eugene Youjun Chen - Fremont CA, US
    Xueti Tang - Fremont CA, US
    Steven M. Watts - Mountain View CA, US
  • Assignee:
    Grandis, Inc. - San Jose CA
  • International Classification:
    H01L 29/82
  • US Classification:
    257421, 257E29323
  • Abstract:
    A method and system for providing a magnetic substructure usable in a magnetic device, as well as a magnetic element and memory using the substructure are described. The magnetic substructure includes a plurality of ferromagnetic layers and a plurality of nonmagnetic layers. The plurality of ferromagnetic layers are interleaved with the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are immiscible with and chemically stable with respect to the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are substantially free of a magnetically dead layer-producing interaction with the plurality of nonmagnetic layers. Further, the plurality of nonmagnetic layers induce a perpendicular anisotropy in the plurality of ferromagnetic layers. The magnetic substructure is configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic substructure.
  • Method And System For Providing Magnetic Tunneling Junction Elements Having Improved Performance Through Capping Layer Induced Perpendicular Anisotropy And Memories Using Such Magnetic Elements

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  • US Patent:
    20110031569, Feb 10, 2011
  • Filed:
    May 7, 2010
  • Appl. No.:
    12/776331
  • Inventors:
    Steven M. Watts - Mountain View CA, US
    Zhitao Diao - Fremont CA, US
    Xueti Tang - Fremont CA, US
  • Assignee:
    GRANDIS, INC. - Milpitas CA
  • International Classification:
    H01L 29/82
    H01L 21/00
  • US Classification:
    257421, 438 3, 257E29323, 257E21002
  • Abstract:
    A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.
  • Method And System For Providing Magnetic Tunneling Junction Elements Having Improved Performance Through Capping Layer Induced Perpendicular Anisotropy And Memories Using Such Magnetic Elements

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  • US Patent:
    20110032644, Feb 10, 2011
  • Filed:
    Aug 10, 2009
  • Appl. No.:
    12/538489
  • Inventors:
    Steven M. Watts - Mountain View CA, US
    Zhitao Diao - Fremont CA, US
    Xueti Tang - Fremont CA, US
  • Assignee:
    GRANDIS, INC. - Milpitas CA
  • International Classification:
    G11B 5/127
  • US Classification:
    36032412, G9B 504
  • Abstract:
    A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.
  • Method And System For Providing Magnetic Tunneling Junction Elements Having Improved Performance Through Capping Layer Induced Perpendicular Anisotropy And Memories Using Such Magnetic Elements

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  • US Patent:
    20120155156, Jun 21, 2012
  • Filed:
    Feb 25, 2011
  • Appl. No.:
    13/035726
  • Inventors:
    Steven M. Watts - Mountain View CA, US
    Zhitao Diao - Fremont CA, US
    Xueti Tang - Fremont CA, US
    Kiseok Moon - Pleasanton CA, US
    Mohamad Towfik Krounbi - San Jose CA, US
  • Assignee:
    Grandis, Inc. - Milpitas CA
  • International Classification:
    G11C 11/02
    G11B 5/84
    G11B 5/64
  • US Classification:
    365158, 428826, 427123
  • Abstract:
    A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.
  • Method And System For Providing Magnetic Layers Having Insertion Layers For Use In Spin Transfer Torque Memories

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  • US Patent:
    20120261776, Oct 18, 2012
  • Filed:
    Dec 20, 2011
  • Appl. No.:
    13/332328
  • Inventors:
    Xueti Tang - Fremont CA, US
    Vladimir Nikitin - Campbell CA, US
    Dmytro Apalkov - San Jose CA, US
    Kiseok Moon - Pleasanton CA, US
    Steven M. Watts - Mountain View CA, US
  • Assignee:
    Samsung Electronics Co., LTD. - Gyeonggi-Do
  • International Classification:
    H01L 29/82
    H01L 21/18
  • US Classification:
    257421, 438 3, 257E29323, 257E21085
  • Abstract:
    A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, and at least one damping reduction layer. The free layer has an intrinsic damping constant. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one damping reduction layer is adjacent to at least a portion of the free layer and configured to reduce the intrinsic damping constant of the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
  • Method And System For Providing Magnetic Junctions Having Improved Characteristics

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  • US Patent:
    20130154036, Jun 20, 2013
  • Filed:
    Dec 20, 2011
  • Appl. No.:
    13/332305
  • Inventors:
    Xueti Tang - Fremont CA, US
    Dmytro Apalkov - San Jose CA, US
    Steven M. Watts - Mountain View CA, US
    Kiseok Moon - Pleasanton CA, US
    Vladimir Nikitin - Campbell CA, US
  • Assignee:
    Samsung Electronics Co., LTD. - Gyeonggi-Do
  • International Classification:
    H01L 43/10
    H01L 43/12
  • US Classification:
    257421, 438 3, 257E43005, 257E43006
  • Abstract:
    A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, at least one insulating layer, and at least one magnetic insertion layer adjoining the at least one insulating layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one insulating layer is adjacent to at least one of the free layer and the pinned layer. The at least one magnetic insertion layer adjoins the at least one insulating layer. In some aspects, the insulating layer(s) include at least one of magnesium oxide, aluminum oxide, tantalum oxide, ruthenium oxide, titanium oxide, and nickel oxide The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
  • System And Method For Avoiding Complete Index Tree Traversals In Sequential And Almost Sequential Index Probes

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  • US Patent:
    57489521, May 5, 1998
  • Filed:
    May 10, 1995
  • Appl. No.:
    8/438558
  • Inventors:
    Atul Chadha - Milpitas CA
    Donald J. Haderle - Los Gatos CA
    Akira Shibamiya - Los Altos CA
    Robert W. Lyle - San Jose CA
    Steven J. Watts - San Jose CA
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    G06F 1730
  • US Classification:
    395602
  • Abstract:
    The present invention provides a system and method for utilizing the proximity of keys in sequential or near sequential index probes to avoid complete index tree traversal. Page information from three pages (LAST, PARENT and NEXT) are stored in separate information fields within an Index Lookaside Buffer. The LAST information field contains information on the most recent leaf page accessed during an index probe in a read key or an insert key operation, the PARENT information field contains information on the parent page of the most recently accessed leaf page described in the LAST information field, and the NEXT information field contains information on the most recent leaf page accessed during a fetch-next key or delete key operation. On a subsequent index probe, the LAST, NEXT and PARENT information fields are sequentially analyzed to determine if the search key is contained within the leaf page described by the LAST or NEXT information fields or if the search key is contained within one of the leaf pages pointed to by the parent page described by the PARENT information field. If none of the LAST, NEXT or PARENT information fields identify the leaf page containing the search key then the default root-to-leaf traversal would commence.
  • Interface To Support State-Dependent Web Applications Accessing A Relational Database

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  • US Patent:
    60385626, Mar 14, 2000
  • Filed:
    Sep 5, 1996
  • Appl. No.:
    8/708512
  • Inventors:
    Vaishnavi Anjur - Emeryville CA
    Atul Chadha - Milpitas CA
    Piyush Goel - Monte Sereno CA
    Balakrishna Raghavendra Iyer - San Jose CA
    Venkatachary Srinivasan - Santa Clara CA
    Steven John Watts - Morgan Hill CA
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    G06F 1730
  • US Classification:
    707 10
  • Abstract:
    Many web applications require access to a relational database. The requirements of such web applications are different from conventional applications that access a database. Web applications need to have selective recoverability and need to have support for different transaction structures, other than the flat transaction structure of conventional database applications, including nested and chained transactions. To achieve this, an interface between the application and database has the following functional features: 1) the interface to the database is connection oriented, i. e. , the connection is retained across several invocations of the application; 2) the backend of the interface is long living, i. e. , it exists across multiple invocations; 3) state information about a session in progress is maintained, and more specifically, it is distributed between the backend of the interface and the hidden fields of the HTML output document.

Resumes

Steven Watts Photo 1

Steven Watts

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Steven Watts Photo 2

Steven Watts

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Industry:
Public Policy
Steven Watts Photo 3

Security Officer

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Work:

Security Officer
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Steven Watts

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Lawyers & Attorneys

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Steven Watts - Lawyer

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Office:
Dinsmore & Shohl LLP
Specialties:
Banking & Financial Services
Business
Corporate & Transactional
Finance
Franchise and Distribution
Mergers & Acquisitions
Private Placements
Public Company Compliance & Governance
Public Offerings
Securities & Corporate Finance
Securities Law
Venture Capital
Securities Offerings
Contracts & Agreements
Securities & Corporate Finance
ISLN:
902921892
Admitted:
1981
University:
The Ohio State University, B.A., 1978
Law School:
University of Dayton School of Law, J.D., 1981
Steven Watts Photo 6

Steven Watts - Lawyer

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Office:
Steven R. Watts
Specialties:
Family Law
Children
ISLN:
902921908
Admitted:
1974
University:
Illinois Wesleyan University, B.A.
Law School:
University of Iowa, J.D.

Plaxo

Steven Watts Photo 7

Steven Watts/Claudia Watts

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cabinetmaker/teacher at Exhibit Associates/KCMO Sc...
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Steven Watts

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ASMA

Facebook

Steven Watts Photo 9

Steven Watts

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Steven Watts Photo 10

Steven Pimpjucie Watts

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Steven Watts Photo 11

Steven Likeachamp Watts

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Steven Watts Photo 12

Steven R. Watts

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Steven Watts Photo 13

Steven Ray Watts

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Steven Watts Photo 14

Steven Clay Watts

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Steven Watts Photo 15

Steven Michael Watts

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Steven Watts Photo 16

Steven Watts

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Youtube

Steven Watts #72 OT Saddleback College

wk5 Football Highlights

  • Category:
    Sports
  • Uploaded:
    14 Oct, 2010
  • Duration:
    2m 57s

Lady Gaga - Born This Way (DJ Steve Watts Clu...

Lady Gaga Born This Way ,The DJ Steve Watts Clubmix. DJ Steve Watts Wo...

  • Category:
    Music
  • Uploaded:
    06 Mar, 2011
  • Duration:
    10m 6s

St Kilda,a wee visit by Steven Watts,Neilston

Steven Watts visits the archipelago of St Kilda, the remotest part of ...

  • Category:
    Travel & Events
  • Uploaded:
    23 Jan, 2009
  • Duration:
    3m 18s

Steven Watts #72 OT San Clemente HS

Steven Watts #72 Offensive Tackle oline football

  • Category:
    Sports
  • Uploaded:
    10 Jan, 2009
  • Duration:
    5m 7s

Book TV: Steven Watts, "Self-Help Messiah: Da...

Steven Watts talks about the life and lasting impact of Dale Carnegie,...

  • Duration:
    10m 1s

Three questions with Disney historian Steven ...

University of Missouri professor Steven Watts is one of a handful of f...

  • Duration:
    2m 52s

Classmates

Steven Watts Photo 17

Steven Watts

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Schools:
Secondary High School Clearwater Saudi Arabia 1976-1980
Community:
Laurie Tompkins, Lavonne Tobin, Lorie Bourelle
Steven Watts Photo 18

Steven Jay Watts

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Schools:
Rittman High School Rittman OH 1978-1982
Community:
Becky Damron, Rhonda Watson
Steven Watts Photo 19

Steven Watts

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Schools:
Saint Francis Xavier School Lake Station IN 1968-1976
Community:
Edna Maturkanich, Rod Dennison, Kevin Durning
Steven Watts Photo 20

Steven Watts

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Schools:
Trinity Preparatory School Ilchester MD 1963-1965
Community:
Mary Amend, Alice Krieg, Robert Louis, Michael Gesker
Steven Watts Photo 21

Steven Watts

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Schools:
Letcher County Central High School Whitesburg KY 1982-1986
Community:
Barbara Hale
Steven Watts Photo 22

Steven Watts

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Schools:
Gettysburg High School Gettysburg PA 2004-2008
Community:
Diana Snell, Janet Kennell
Steven Watts Photo 23

Steven Watts

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Schools:
Goodrich Elementary School Woodridge IL 1992-1996
Community:
Alan Bruchas
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Steven Watts

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Schools:
Hazelwood High School Florissant MO 1966-1970
Community:
Rosemarie Moss, Jeff Pfeifer, Beverly Forden

News

Police Seize Large Quantity Of Drugs With Street Value Of Nearly $9 Million

Police seize large quantity of drugs with street value of nearly $9 million

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  • We are talking about a very, very significant seizure of product, Insp. Steven Watts told reporters on Thursday. It is a hypothetical in terms of how much violence this could reduce or prevent but drugs and firearms and violence do go together. That is the nature of the business.
  • Date: Oct 13, 2016
  • Source: Google

Bill Cosby's legacy, recast: Accusers speak in detail about sexual-assault ...

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  • Cosby was a familiar face on the party circuit, knocking around with Hefner, author Shel Silverstein and John Dante, the second-in-command at Playboy, according to Mr. Playboy: Hugh Hefner and the American Dream, by Steven Watts.
  • Date: Nov 22, 2014
  • Category: Entertainment
  • Source: Google

Kelly wins Run 4 Missions road race

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  • Justin Brownridge of Valdosta finished seventh, crossing the finish line in 27:12. Rick Mazurkiewicz of Valdosta took eighth, with a time of 27:15. Jacob Bearrentine of Valdosta was ninth, finishing in 27:27. Steven Watts of Hahira came in 10th, with a time of 29:28.
  • Date: Jan 22, 2013
  • Category: World
  • Source: Google

Myspace

Steven Watts Photo 25

Steven Watts

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Locality:
Gourock, Scotland
Gender:
Male
Birthday:
1934
Steven Watts Photo 26

Steven watts

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Locality:
The Woodlands
Gender:
Male
Birthday:
1946
Steven Watts Photo 27

steven watts

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Locality:
lisle, Illinois
Gender:
Male
Birthday:
1942
Steven Watts Photo 28

Steven Watts

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Locality:
Taylorsville, North Carolina
Gender:
Male
Birthday:
1943
Steven Watts Photo 29

Steven Watts

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Locality:
Warner Vegas, Georgia
Gender:
Male
Birthday:
1948
Steven Watts Photo 30

Steven Watts

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Locality:
DA WESTSIDE GP YA DIGG, Mississippi
Gender:
Male
Birthday:
1950

Flickr

Googleplus

Steven Watts Photo 39

Steven Watts

Work:
Doe & Ingalls of Ca, LLC (2009-2012)
Inland Empire Utilities Agency - Inventory (2012)
Relationship:
In_a_relationship
Tagline:
It is what it is.
Steven Watts Photo 40

Steven Watts

Education:
California State University, Fullerton - English
Tagline:
So this is cool?
Bragging Rights:
Am pretty cool yet still super humble
Steven Watts Photo 41

Steven Watts

Steven Watts Photo 42

Steven Watts

Steven Watts Photo 43

Steven Watts

Steven Watts Photo 44

Steven Watts

Steven Watts Photo 45

Steven Watts

Tagline:
I'm a very laid back guy and very easy to get along with.
Steven Watts Photo 46

Steven Watts


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