Stuart R Ducker

US Patent:

8466747, Jun 18, 2013

Filed:

Apr 8, 2011

Appl. No.:

13/082800

Inventors:

David R. Helms - Tyngsboro MA, US
John Ditri - Huntingdon Valley PA, US
Stuart R. Ducker - Hainesport NJ, US
Dana J. Sturzebecher - Cary NC, US

Assignee:

Lockheed Martin Corporation - Bethesda MD

International Classification:

H03F 3/14

US Classification:

330307, 330302

Abstract:

An integrated circuit comprises a GaAs substrate thermally and mechanically mounted on a SiC substrate. The GaAs substrate is doped to define first and second transistors. Circuit conductors are defined on the GaAs substrate, which conductors interconnect the source of the first transistor to neutral and the drain to the source of the second transistor. Conductors connect the gate of the second transistor to neutral, to define a cascode amplifier. The SiC substrate supports first and second matching circuits, one of which is connected to the gate of the first transistor, and the other of which is connected to the drain of the second transistor.