Sung I Ahn

US Patent:

7015889, Mar 21, 2006

Filed:

Aug 30, 2002

Appl. No.:

10/232593

Inventors:

Sung Tae Ahn - Palo Alto CA, US
Yung Jin Jeon - Uwang-si, KR
Chan Young Jeong - Seongnam-si, KR
Keunmyung Lee - Palo Alto CA, US

Assignee:

Leadis Technology, Inc. - Sunnyvale CA

International Classification:

G09G 5/00

US Classification:

345 98, 345100

Abstract:

A scheme to reduce output variations in a column driver for a flat-panel display by sharing the characteristics of analog circuit is disclosed. An input multiplexer is provided between two neighboring digital inputs, and an output multiplexer is provided between two neighboring analog outputs so that the characteristics of neighboring analog circuits can be shared by multiplexing. The averaging effect by sharing reduces variations in the output. The multiplexing may be done either in time division or on a frame-by-frame basis.

US Patent:

52984354, Mar 29, 1994

Filed:

Sep 3, 1992

Appl. No.:

7/939982

Inventors:

Sheldon Aronowitz - San Jose CA
Courtney L. Hart - Los Gatos CA
Sung T. Ahn - Albany CA

Assignee:

National Semiconductor Corporation - Santa Clara CA

International Classification:

H01L 21265

US Classification:

437 24

Abstract:

A method of inhibiting dopant diffusion in silicon using germanium is provided. Germanium is distributed in substitutional sites in a silicon lattice to form two regions of germanium interposed between a region where dopant is to be introduced and a region from which dopant is to be excluded, the two germanium regions acting as a dopant diffusion barrier.

US Patent:

52801853, Jan 18, 1994

Filed:

Jul 31, 1991

Appl. No.:

7/738798

Inventors:

Sheldon Aronowitz - San Jose CA
Courtney L. Hart - Los Gatos CA
Sung T. Ahn - Albany CA

Assignee:

National Semiconductor Corporation - Santa Clara CA

International Classification:

H01L 31117
H01L 29167
H01L 29207
H01L 29227

US Classification:

257607

Abstract:

A structure of inhibiting dopant diffusion in silicon using germanium is provided. Germanium is distributed in substitutional sites in a silicon lattice to form two regions of germanium interposed between a region where dopant is to be introduced and a region from which dopant is to be excluded, the two germanium regions acting as a dopant diffusion barrier.