Sung Wook Yoon

age ~40

from Fort Washington, PA

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Also known as:

Sung W Yoon
Su Yoon

Connected to:

Sung Yoon Phones & Addresses

Fort Washington, PA
Glen Mills, PA
Philadelphia, PA
Havertown, PA
Drexel Hill, PA
Havertown, PA

Work

Company:

Institute for research in electronics and applied physics
2006
Position:

Graduate research assistant

Education

School / High School:

University of Maryland- College Park, MD
2008
Specialities:

Doctor of Philosophy in Electrical and Computer Engineering

Skills

SKILLS High Intensity Pulsed Laser... • design/building and maintenance of mode-... • regenerative amplifiers and Chirped Puls... • 800 nm • 36 fs • 830 mJ) and a non-commercial Nd:YAG syst... • 1064 nm • 100 ps • 1 J). Adaptive Optical systems: Ex... • transverse interferometer with sub-picos... • spectral interferometer • electron/ion spectrometer • optical spectrometer. EUV Spectros... • including the use of sub-micrometer thic... • L-I-V measurements Surface charact... • atomic force microscopy • scanning electron microscopy • surface profiler Semiconductor pro... • mask aligner for photolithography • lift-off process • thermal evaporation deposition • sputtering deposition • wet-etching • reactive ion etching • thermal oxidation • thermal annealing • Electronics: Sub-nanosecond timing and s... • Mathematica and LabVIEW. Some experience... • PSpice • Java • C++ • knowledge of data structures

Ranks

Licence:

New York - Currently registered
Date:

1996

Us Patents

Atomic Emission Spectroscopy On A Chip
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US Patent:

20090298193, Dec 3, 2009
Filed:

Apr 30, 2009
Appl. No.:

12/433448
Inventors:

Hong Koo Kim - Pittsburgh PA, US
Sung Jun Yoon - Pittsburgh PA, US
International Classification:

G01N 21/76
B01J 19/00
G01N 21/75
H01L 31/00
US Classification:

436172, 204164, 422 8205, 257429, 257431, 257E31001
Abstract:

A method of inducing explosive atomization of materials is provided using a metal-oxide-semiconductor (MOS)-based structure under electrical excitation. Explosive atomization of the gate electrode and surrounding dielectric materials creates a microplasma that is substantially confined with the device at the metal/dielectric interface. The device can generate a microplasma in either the accumulation or inversion regime. The high degree of confinement of the microplasma allows chip-scale implementation of atomic emission spectroscopy and detection using a minimal amount of analyte.

Lawyers & Attorneys

Sung Keun Yoon - Lawyer

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Address:

Seoul High Court

Licenses:

New York - Currently registered 1996

Education:

University of Michigan Law School

Specialties:

Arbitration - 100%

Sung Yoon - Lawyer

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ISLN:

1000754518

Admitted:

2016

Resumes

Sung Yoon

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Sung Yoon

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Location:

United States

Sung Yoon

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Location:

United States

Sung Yoon College Park, MD

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Work:

Institute for Research in Electronics and Applied Physics

2006 to 2008
Graduate Research Assistant Institute for Research in Electronics and Applied Physics

2006 to 2008
Graduate Research Assistant, Petersen Institute of Nano Science and Engineering

Education:

University of Maryland
College Park, MD
2008 to 2000
Doctor of Philosophy in Electrical and Computer Engineering University of Pittsburgh
Pittsburgh, PA
2006 to 2008
Master of Science in Electrical and Computer Engineering

Skills:

SKILLS High Intensity Pulsed Laser Systems: Expert in the operation, design/building and maintenance of mode- locked oscillators, regenerative amplifiers and Chirped Pulse Amplification systems (CPA). Experience with a commercial (Coherent) Ti:sapphire pulsed system (10 Hz, 800 nm, 36 fs, 830 mJ) and a non-commercial Nd:YAG system (10 Hz, 1064 nm, 100 ps, 1 J). Adaptive Optical systems: Experienced in operating deformable mirror and wavefront sensor to optimize laser focus. Design and build an optical setup to generate modulated plasma waveguide with spatial light modulator and axicon. Experimental Diagnostic devices: Design and build single-shot autocorrelator, transverse interferometer with sub-picosecond resolution, spectral interferometer, electron/ion spectrometer, optical spectrometer. EUV Spectroscopy: Experienced in issues associated with generation and detection of electromagnetic radiation from 2 - 40 nm, including the use of sub-micrometer thickness metal filters and back-thinned vacuum CCD systems. Electrical characterization of Semiconductor devices: semiconductor parameter analyzer, L-I-V measurements Surface characterization: spectroscopic ellipsometry, atomic force microscopy, scanning electron microscopy, surface profiler Semiconductor processing: holographic lithography, mask aligner for photolithography, lift-off process, thermal evaporation deposition, sputtering deposition, wet-etching, reactive ion etching, thermal oxidation, thermal annealing, Electronics: Sub-nanosecond timing and synchronization of fast electro-optic switches Machining: a milling machine (CNC) and lathe Programming languages: Proficient in MATLAB, Mathematica and LabVIEW. Some experiences with VHDL, PSpice, Java, C++, knowledge of data structures