Susan Hong

US Patent:

20060003662, Jan 5, 2006

Filed:

Aug 26, 2005

Appl. No.:

11/213597

Inventors:

Randolph Schueller - Austin TX, US
Charlie Hong - Austin TX, US
Susan Hong - Austin TX, US

International Classification:

H01J 9/00
H01J 9/04
H01J 9/12

US Classification:

445050000, 445024000, 445051000

Abstract:

A field emission device having emitter tips and a support layer for a gate electrode is provided. Openings in the support layer and the gate layer are sized to provide mechanical support for the gate electrode. Cavities may be formed and mechanically supported by walls between cavities or columns within a cavity. Dielectric layers having openings of different sizes between the emission tips and the gate electrode can decrease leakage current between emitter tips and the gate layer. The emitter tips may comprise a carbon-based material. The device can be formed using processing operations similar to those used in conventional semiconductor device manufacturing.

US Patent:

20030117055, Jun 26, 2003

Filed:

Dec 26, 2001

Appl. No.:

10/035766

Inventors:

Randolph Schueller - Austin TX, US
Charlie Hong - Austin TX, US
Susan Hong - Austin TX, US

International Classification:

H01J001/304

US Classification:

313/311000, 313/351000

Abstract:

A field emission device having emitter tips and a support layer for a gate electrode is provided. Openings in the support layer and the gate layer are sized to provide mechanical support for the gate electrode. Cavities may be formed and mechanically supported by walls between cavities or columns within a cavity. Dielectric layers having openings of different sizes between the emission tips and the gate electrode can decrease leakage current between emitter tips and the gate layer. The emitter tips may comprise a carbon-based material. The device can be formed using processing operations similar to those used in conventional semiconductor device manufacturing.