Taide T Tan

US Patent:

20200190667, Jun 18, 2020

Filed:

Feb 27, 2020

Appl. No.:

16/803313

Inventors:

- Fremont CA, US
Taide Tan - Tigard OR, US

International Classification:

C23C 16/455
H01J 37/32
C23C 16/458
C23C 16/509

Abstract:

A chamber for use in implementing a deposition process includes a pedestal for supporting a semiconductor wafer. A silicon ring is disposed over the pedestal and surrounds the semiconductor wafer. The silicon ring has a ring thickness that approximates a semiconductor wafer thickness. The silicon ring has an annular width that extends a process zone defined over the semiconductor wafer to an extended process zone that is defined over the semiconductor wafer and the silicon ring. A confinement ring defined from a dielectric material is disposed over the pedestal and surrounds the silicon ring. A showerhead having a central showerhead area and an extended showerhead area is also included. The central showerhead area is substantially disposed over the semiconductor wafer and the silicon ring. The extended showerhead area is substantially disposed over the confinement ring. The annular width of the silicon ring enlarges a surface area of the semiconductor wafer that is exposed and shifts non-uniformity effects of deposition materials over the semiconductor wafer from an edge of the semiconductor wafer to an outer edge of the silicon ring.

US Patent:

20180163305, Jun 14, 2018

Filed:

Dec 14, 2016

Appl. No.:

15/378854

Inventors:

- Fremont CA, US
Huatan Qiu - Lake Oswego OR, US
Bhadri Varadarajan - Beaverton OR, US
Patrick Girard Breiling - Portland OR, US
Bo Gong - Sherwood OR, US
Will Schlosser - Portland OR, US
Zhe Gui - Beaverton OR, US
Taide Tan - Tigard OR, US
Geoffrey Hohn - Portland OR, US

International Classification:

C23C 16/455
C23C 16/50
H01L 21/02

Abstract:

A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum including an inlet to receive heat transfer fluid and a plurality of flow channels to direct the heat transfer fluid through a center portion of the showerhead to an outlet to control a temperature of the showerhead, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

US Patent:

20170002465, Jan 5, 2017

Filed:

Jun 30, 2015

Appl. No.:

14/788621

Inventors:

- Fremont CA, US
Taide Tan - Tigard OR, US

International Classification:

C23C 16/455
C23C 16/505
C23C 16/458
H01J 37/32

Abstract:

A chamber for use in implementing a deposition process includes a pedestal for supporting a semiconductor wafer. A silicon ring is disposed over the pedestal and surrounds the semiconductor wafer. The silicon ring has a ring thickness that approximates a semiconductor wafer thickness. The silicon ring has an annular width that extends a process zone defined over the semiconductor wafer to an extended process zone that is defined over the semiconductor wafer and the silicon ring. A confinement ring defined from a dielectric material is disposed over the pedestal and surrounds the silicon ring. A showerhead having a central showerhead area and an extended showerhead area is also included. The central showerhead area is substantially disposed over the semiconductor wafer and the silicon ring. The extended showerhead area is substantially disposed over the confinement ring. The annular width of the silicon ring enlarges a surface area of the semiconductor wafer that is exposed and shifts non-uniformity effects of deposition materials over the semiconductor wafer from an edge of the semiconductor wafer to an outer edge of the silicon ring.

US Patent:

20160289827, Oct 6, 2016

Filed:

Mar 31, 2015

Appl. No.:

14/675529

Inventors:

- Fremont CA, US
Yukinori Sakiyama, I - West Linn OR, US
Taide Tan - Tigard OR, US
Fayaz Shaikh - Portland OR, US

International Classification:

C23C 16/458

Abstract:

A plasma chamber includes a pedestal, an upper electrode, and an annular structure. The pedestal has a central region to support a wafer and a step region that circumscribes the central region. A sloped region circumscribes the step region, with the sloped region having a top surface that slopes downward from the step region such that a vertical distance between the inner boundary of the top surface and the central region is less than a vertical distance between the outer boundary of the top surface and the central region. The upper electrode is coupled to a radio frequency power supply. An inner perimeter of the annular structure is defined to circumscribe the central region of the pedestal when the annular structure is disposed over the pedestal, and a portion of the annular structure has a thickness that increases with a radius of the annular structure.