Tamara H Wright

US Patent:

20110042772, Feb 24, 2011

Filed:

Aug 19, 2009

Appl. No.:

12/544075

Inventors:

Andreas Hampp - Santa Barbara CA, US
Tamara H. Wright - Santa Barbara CA, US
Heather D. Leifeste - Goleta CA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H01L 31/08
H01L 21/50

US Classification:

257443, 438 67, 257E21499, 257E31052

Abstract:

In certain embodiments, a method includes forming a composite semiconductor structure for altering a rate of thermal expansion of a first substrate. The composite semiconductor structure is formed by atomically bonding a first surface of a thermal matching substrate to a first surface of the first substrate, and atomically bonding a second surface of the thermal matching substrate to a first surface of a balancing substrate. The thermal matching substrate is adapted to alter the rate of thermal expansion of the first substrate and the balancing substrate is adapted to substantially prevent warping of the composite semiconductor structure.