Tersem S Summan

US Patent:

20090269512, Oct 29, 2009

Filed:

Apr 28, 2008

Appl. No.:

12/110879

Inventors:

Jianhua Zhou - San Jose CA, US
Deenesh Padhi - Sunnyvale CA, US
Karthik Janakiraman - San Jose CA, US
Hang Yu - Santa Clara CA, US
Siu F. Cheng - San Jose CA, US
Yoganand Saripalli - Sunnyvale CA, US
Tersem Summan - San Jose CA, US

International Classification:

C23C 16/44

US Classification:

427569, 118723 I

Abstract:

A method and apparatus for adjust local plasma density during a plasma process. One embodiment provides an electrode assembly comprising a conductive faceplate having a nonplanar surface. The nonplanar surface is configured to face a substrate during processing and the conductive faceplate is disposed so that the nonplanar surface is opposing a substrate support having an electrode. The conductive faceplate and the substrate support form a plasma volume. The nonplanar surface is configured to adjust electric field between the conductive plate and the electrode by varying a distance between the conductive plate and the electrode.

US Patent:

20130302996, Nov 14, 2013

Filed:

May 10, 2012

Appl. No.:

13/468776

Inventors:

Patrick REILLY - Dublin CA, US
Shahid SHAIKH - Santa Clara CA, US
Tersem SUMMAN - San Jose CA, US
Deenesh PADHI - Sunnyvale CA, US
Sanjeev BALUJA - Campbell CA, US
Juan Carlos ROCHA-ALVAREZ - San Carlos CA, US
Thomas NOWAK - Cupertino CA, US
Bok Hoen KIM - San Jose CA, US
Derek R. WITTY - Fremont CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/02

US Classification:

438758, 257E21002

Abstract:

Embodiments described herein relate to a method for processing a substrate. In one embodiment, the method includes introducing a gas mixture comprising a hydrocarbon source and a diluent gas into a deposition chamber located within a processing system, generating a plasma from the gas mixture in the deposition chamber at a temperature between about 200 C. and about 700 C. to form a low-hydrogen content amorphous carbon layer on the substrate, transferring the substrate into a curing chamber located within the processing system without breaking vacuum, and exposing the substrate to UV radiation within the curing chamber at a curing temperature above about 200 C.

US Patent:

20170301537, Oct 19, 2017

Filed:

Jun 28, 2017

Appl. No.:

15/636239

Inventors:

- Santa Clara CA, US
Shahid SHAIKH - Santa Clara CA, US
Pramit MANNA - Sunnyvale CA, US
Mandar B. PANDIT - Santa Clara CA, US
Tersem SUMMAN - San Jose CA, US
Patrick REILLY - Dublin CA, US
Deenesh PADHI - Sunnyvale CA, US
Bok Hoen KIM - San Jose CA, US
Heung Lak PARK - San Jose CA, US
Derek R. WITTY - Fremont CA, US

International Classification:

H01L 21/02
H01L 21/02
C23C 16/26
C23C 16/50
H01L 21/311
H01L 21/033

Abstract:

Embodiments of the disclosure relate to deposition of a conformal carbon-based material. In one embodiment, the method comprises depositing a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, introducing a hydrocarbon source, a plasma-initiating gas, and a dilution gas into the processing chamber, generating a plasma in the processing chamber at a deposition temperature of about 80 C. to about 550 C. to deposit a conformal amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers, and removing the patterned features formed from the sacrificial dielectric layer.

US Patent:

20160005596, Jan 7, 2016

Filed:

Feb 14, 2014

Appl. No.:

14/770412

Inventors:

- Santa Clara CA, US
Shahid SHAIKH - Santa Clara CA, US
Pramit MANNA - Sunnyvale CA, US
Mandar B. PANDIT - Santa Clara CA, US
Tersem SUMMAN - San Jose CA, US
Patrick REILLY - Dublin CA, US
Deenesh PADHI - Sunnyvale CA, US
Bok Hoen KIM - San Jose CA, US
Heung Lak PARK - San Jose CA, US
Derek R. WITTY - Fremont CA, US

International Classification:

H01L 21/02
H01L 21/033
H01L 21/311

Abstract:

Embodiments of the invention relate to deposition of a conformal carbon-based material. In one embodiment, the method comprises depositing a sacrificial dielectric layer with a predetermined thickness over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, introducing a hydrocarbon source, a plasma-initiating gas, and a dilution gas into the processing chamber, wherein a volumetric flow rate of hydrocarbon source: plasma-initiating gas: dilution gas is in a ratio of 1:0.5:20, generating a plasma at a deposition temperature of about 300 C to about 500 C to deposit a conformal amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate, and removing the patterned features.