Thanh V Ha

US Patent:

6340521, Jan 22, 2002

Filed:

Nov 9, 1999

Appl. No.:

09/436495

Inventors:

Phuong Nguyen - Milpitas CA
Thanh Ha - San Jose CA
Elsie Yang Chuang - Cupertino CA

Assignee:

Seagate Technology LLC - Scotts Valley CA

International Classification:

G11B 572

US Classification:

428336, 428408, 428694 TC, 428694 TP, 428689, 428702, 428900, 427131, 20419215, 20419216

Abstract:

A magnetic medium is formed with a barrier layer between the magnetic layer and protective overcoat to prevent degradation of magnetic properties during deposition of the protective overcoat due to poisoning effects by reactive gases on the magnetic layer. Embodiments include sputter depositing a Cr or Cr alloy barrier layer, having a thickness of about 5 to about 25 , on a magnetic layer and sputter depositing a protective overcoat containing carbon and nitrogen on the barrier layer in a nitrogen-containing environment.

US Patent:

7504166, Mar 17, 2009

Filed:

May 27, 2004

Appl. No.:

10/856209

Inventors:

Charles Changqing Chen - Milpitas CA, US
Thanh Thien Ha - San Jose CA, US
Abebe Hailu - San Jose CA, US
Taesun Ernest Kim - San Jose CA, US
Mariana Rodica Munteanu - Santa Clara CA, US
Steve Kuo-Hsing Hwang - San Jose CA, US

Assignee:

Seagate Technology LLC - Scotts Valley CA

International Classification:

G11B 5/66

US Classification:

428827

Abstract:

CoCrPtB is a conventional material used in some of the layers of a thin film magnetic media structure used for recording data in data storage devices such as hard drives. Typically the CoCrPtB layers used for magnetic media have high Cr and low B in bottom magnetic layers and low Cr and high B in top magnetic layers. In accordance with one embodiment of this invention and to improve media electrical performance, fifth elements, such as Ta, Nb and Hf, etc. were added to the CoCrPtB materials, resulting in CoCrPtB—X, to enhance the grain segregation. The five element CoCrPtB—X layers were deposited using a pulsed direct current sputter technique instead of conventional direct current sputtering techniques. The resulting magnetic media structure having CoCrPtB—X alloy layers exhibits an increase in coercivity Hc and improvement in recording performance.

US Patent:

20090211898, Aug 27, 2009

Filed:

Feb 24, 2009

Appl. No.:

12/391938

Inventors:

Charles Changqing Chen - Milpitas CA, US
Thanh Thien Ha - San Jose CA, US
Abebe Hailu - San Jose CA, US
Taesun Ernest Kim - San Jose CA, US
Mariana Rodica Munteanu - Santa Clara CA, US
Steve Kuo-Hsing Hwang - San Jose CA, US

Assignee:

Seagate Technology LLC - Scotts Valley CA

International Classification:

C23C 14/34

US Classification:

20419215

Abstract:

CoCrPtB is a conventional material used in some of the layers of a thin film magnetic media structure used for recording data in data storage devices such as hard drives. Typically the CoCrPtB layers used for magnetic media have high Cr and low B in bottom magnetic layers and low Cr and high B in top magnetic layers. In accordance with one embodiment of this invention and to improve media electrical performance, fifth elements, such as Ta, Nb and Hf, etc. were added to the CoCrPtB materials, resulting in CoCrPtB-X, to enhance the grain segregation. The five element CoCrPtB-X layers were deposited using a pulsed direct current sputter technique instead of conventional direct current sputtering techniques. The resulting magnetic media structure having CoCrPtB-X alloy layers exhibits an increase in coercivity Hc and improvement in recording performance.

US Patent:

20100006420, Jan 14, 2010

Filed:

Jul 8, 2008

Appl. No.:

12/169154

Inventors:

Thomas Larson Greenberg - Berkeley CA, US
Thanh Thien Ha - San Jose CA, US
Larry Douglas Monroe - Hollister CA, US
Sam Vi Luong - San Jose CA, US
Chinh Thien Dao - San Jose CA, US
Hung Tuan Nguyen - San Jose CA, US

Assignee:

Seagate Technology LLC - Scotts Valley CA

International Classification:

C23C 14/00

US Classification:

20419212, 20429809

Abstract:

An apparatus for making a magnetic recording medium, including a quartz lamp within a sputtering chamber to heat the medium between the application of layers and without disruption to the vacuum integrity of the sputtering system. A process using the apparatus for manufacturing the magnetic recording medium is also claimed.

US Patent:

20210142110, May 13, 2021

Filed:

Nov 11, 2019

Appl. No.:

16/680347

Inventors:

- Foshan, CN
Thanh Huy Ha - Milpitas CA, US
Zhicai Ou - San Jose CA, US

International Classification:

G06K 9/62
G06K 9/46
G06N 3/08
G06N 3/04

Abstract:

A method includes: capturing one or more images of an unorganized collection of items inside a first machine; determining one or more item types of the unorganized collection of items from the one or more images, comprising: dividing a respective image in the one or more images into a respective plurality of sub-regions; performing feature detection on the respective plurality of sub-regions to obtain a respective plurality of regional feature vectors, wherein a regional feature vector for a sub-region indicates characteristics for a plurality of predefined local item features for the sub-region; generating an integrated feature vector by combining the respective plurality of regional feature vectors; and applying a plurality of binary classifiers to the integrated feature vector; and selecting a machine setting for the first machine based on the determined one or more clothes type in the unorganized collection of items.

US Patent:

20160377425, Dec 29, 2016

Filed:

Jun 1, 2016

Appl. No.:

15/170881

Inventors:

- Milpitas CA, US
Thanh Huy Ha - Milpitas CA, US
Olivier Moreau - Sunnyvale CA, US
Kumar Raja - Concord CA, US

International Classification:

G01B 15/00
H01J 37/22
G01B 11/27
H01L 21/67
H01L 21/68

Abstract:

Methods and systems for determining overlay error between different patterned features of a design printed on a wafer in a multi-patterning step process are provided. For multi-patterning step designs, the design for a first patterning step is used as a reference and designs for each of the remaining patterning steps are synthetically shifted until the synthetically shifted designs have the best global alignment with the entire image based on global image-to-design alignment. The final synthetic shift of each design for each patterning step relative to the design for the first patterning step provides a measurement of relative overlay error between any two features printed on the wafer using multi-patterning technology.