Thomas R Block

US Patent:

6365478, Apr 2, 2002

Filed:

Sep 22, 2000

Appl. No.:

09/667988

Inventors:

Thomas R. Block - Los Angeles CA
Michael Wojtowitz - Long Beach CA
Abdullah Cavus - Redondo Beach CA

Assignee:

TRW Inc. - Redondo Beach CA

International Classification:

H01L 21331

US Classification:

438312

Abstract:

A solid state electronic device ( ) comprising a substrate ( ) and layers ( and ) is fabricated to control the formation of crystalline defects to control at least one characteristic of the device, such as current gain beta. The formation of crystalline defects preferably is controlled by controlling the temperature of the substrate, layers or both.

US Patent:

6408860, Jun 25, 2002

Filed:

Sep 21, 2000

Appl. No.:

09/668104

Inventors:

Patrick T. Chin - Marina del Rey CA
Todd K. Makishi - Harbor City CA
Thomas R. Block - Los Angeles CA

Assignee:

TRW Inc. - Redondo Beach CA

International Classification:

B08B 900

US Classification:

134 221, 134 2215, 134 4, 134 17, 134 42

Abstract:

A method for cleaning phosphorus from a MBE vacuum chamber by freezing the panel ( ) placed within the vacuum chamber ( ) onto which excess phosphorus is deposited. The panel is connected to a source of cold nitrogen ( ) which cools the panel. Water is introduced after the panels are cooled so as to form a layer of ice on top of the phosphorus. The panel may then be removed for cleaning with ice covering the phosphorus without danger of ignition of the phosphorus.

US Patent:

6528829, Mar 4, 2003

Filed:

Mar 25, 1999

Appl. No.:

09/276041

Inventors:

Augusto L. Gutierrez-Aitken - Redondo Beach CA
Aaron K. Oki - Torrance CA
Michael Wojtowicz - Long Beach CA
Dwight C. Streit - Seal Beach CA
Thomas R. Block - Los Angeles CA
Frank M. Yamada - Palos Verdes Estates CA

Assignee:

TRW Inc. - Redondo Beach CA

International Classification:

H01L 2970

US Classification:

257200, 257197, 257194, 257370, 257591, 257 98, 257 88, 257102, 257 94, 257 97

Abstract:

The invention relates to an integrated circuit structure that includes a substrate wafer having an active device layer disposed on a surface of the substrate wafer and having an electrically conductive element contained therein. The integrated circuit structure further comprises a barrier disposed between the substrate wafer and the active device layer, where the barrier blocks carriers injected into the substrate wafer and reduces low frequency oscillation effect.

US Patent:

7339769, Mar 4, 2008

Filed:

Mar 2, 2004

Appl. No.:

10/791927

Inventors:

Matthew J. Carey - San Jose CA, US
Bruce A. Gurney - San Rafael CA, US
Brian R. York - San Jose CA, US
Thomas Block - San Jose CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

International Classification:

G11B 5/33
G11B 5/66

US Classification:

36032411, 338 32 R, 32420721

Abstract:

An antiferromagnetically exchange-coupled structure for use in a magnetic device, such as a magnetoresistive sensor, includes an underlayer formed of a chemically-ordered tetragonal-crystalline alloy, a chemically-ordered tetragonal-crystalline Mn-alloy antiferromagnetic layer in contact with the underlayer, and a ferromagnetic layer exchange-coupled with the antiferromagnetic layer. The underlayer is an alloy selected from the group consisting of alloys of AuCu, FePt, FePd, AgTi3, Pt Zn, PdZn, IrV, CoPt and PdCd, and the antiferromagnetic layer is an alloy of Mn with Pt, Ni, Ir, Pd or Rh. The underlayer enhances the transformation of the Mn alloy from the chemically-disordered phase to the chemically-ordered phase. In one example, an exchange-coupled structure with an underlayer/antiferromagnetic layer of AuCu/PtMn allows the PtMn to be made substantially thinner, thus reducing the electrical resistance of the structure and improving the performance of a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor.

US Patent:

43139230, Feb 2, 1982

Filed:

Dec 29, 1980

Appl. No.:

6/220904

Inventors:

Thomas E. Block - Long Beach CA
Julius Scherzer - Anaheim CA

Assignee:

Filtrol Corporation - Los Angeles CA

International Classification:

C01F 734

US Classification:

423628

Abstract:

Method of producing pseudoboehmite by reacting an aluminum salt with an aluminate.

US Patent:

56683871, Sep 16, 1997

Filed:

Oct 26, 1995

Appl. No.:

8/548715

Inventors:

Dwight C. Streit - Seal Beach CA
Thomas R. Block - Los Angeles CA

Assignee:

TRW Inc. - Redondo Beach CA

International Classification:

H01L 310328

US Classification:

257192

Abstract:

A pseudomorphic HEMT having a partially relaxed InGaAs channel layer. In order to increase device performance and lower the electron transport energy levels within the potential well defined by the conduction band of the channel layer, the channel layer thickness is increased beyond a critical thickness that defines where a strained InGaAs channel becomes relaxed and forms crystal lattice dislocations. The channel layer is partially relaxed in that the channel layer thickness exceeds the critical thickness, but the thickness of the channel layer is limited so that dislocations only form in a single direction.