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Thomas E Cynkar

age ~66

from Bloomington, IN

Also known as:
  • Tom E Cynkar

Thomas Cynkar Phones & Addresses

  • Bloomington, IN
  • Port Charlotte, FL
  • 2626 Black Fox Ct, Fort Collins, CO 80526 • (970)2251203
  • 410 Susanna Ct, Pittsburgh, PA 15207 • (970)2196780
  • 5680 Foothill Pl, Corvallis, OR 97330
  • Fremont, CA
  • Albuquerque, NM
  • 2626 Black Fox Ct, Fort Collins, CO 80526

Work

  • Position:
    Sales Occupations

Education

  • Degree:
    Bachelor's degree or higher

Us Patents

  • Method And Apparatus For Biasing A Metal-Oxide-Semiconductor Capacitor For Capacitive Tuning

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  • US Patent:
    7280002, Oct 9, 2007
  • Filed:
    Mar 3, 2005
  • Appl. No.:
    11/070985
  • Inventors:
    Alvin Leng Sun Loke - Fort Collins CO, US
    Tin Tin Wee - Fort Collins CO, US
    Robert Keith Barnes - Fort Collins CO, US
    Kari Lee Arave - Fort Collins CO, US
    Thomas Edward Cynkar - Fort Collins CO, US
    James Ruhl Pfiester - Fort Collins CO, US
  • Assignee:
    Avago Technologies General IP Pte Ltd - Singapore
  • International Classification:
    H03B 5/12
  • US Classification:
    331177V, 331 36 C
  • Abstract:
    A method and apparatus is presented for generating a reference voltage that biases a metal-oxide-semiconductor (MOS) transistor used as a varactor in capacitive tuning applications. In one embodiment, a biasing circuit is implemented. The biasing circuit comprises a diode-clamped FET and an element coupled to the diode-clamped FET at a connection point. The element produces a constant current through the diode-clamped FET. A voltage is produced at the connection point. The voltage is one gate overdrive plus a threshold voltage above ground or one gate overdrive plus a threshold voltage below VDD. Establishing a threshold voltage in this way enables the biasing circuit to track an ideal voltage of a varactor that is coupled to the biasing circuit through the threshold voltage.
  • Bias Circuit For Common-Mode And Semiconductor Process Voltage And Temperature Optimization For A Receiver Assembly

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  • US Patent:
    7952398, May 31, 2011
  • Filed:
    Apr 27, 2007
  • Appl. No.:
    11/741115
  • Inventors:
    Manuel Salcido - Fort Collins CO, US
    J. Ken Patterson - Fort Collins CO, US
    Thomas Edward Cynkar - Fort Collins CO, US
  • Assignee:
    Avago Technologies Enterprise IP (Singapore) Pte. Ltd. - Singapore
  • International Classification:
    H03B 1/00
  • US Classification:
    327109, 327534
  • Abstract:
    A receiver suitable for applications that desire a common-mode voltage range from approximately 0. 7V to approximately 0. 9V is arranged by coupling first and second differential pair circuit architectures based on first and second current-steering schemes into the same path to generate an output signal. The receiver includes first and second differential pair circuits. The first differential pair circuit is coupled to a first current-steering path via a first port and a second current-steering path via a second port. The second differential pair circuit is coupled to the first current-steering path via a third port and the second current-steering path via a fourth port. A bridge circuit is interposed between the first and second differential pair circuits. The bridge circuit integrates the first and second current-steering paths in a single-stage of the receiver assembly. A bias signal directs the bridge circuit over a set of worst case conditions.
  • Through-Silicon Coaxial Via Structure And Method

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  • US Patent:
    20150028470, Jan 29, 2015
  • Filed:
    Jul 23, 2013
  • Appl. No.:
    13/948196
  • Inventors:
    - Singapore, SG
    Thomas E. Cynkar - Fort Collins CO, US
  • Assignee:
    Avago Technologies General IP (Singapore) Pte.Ltd. - Singapore
  • International Classification:
    H01L 23/498
  • US Classification:
    257737, 438121
  • Abstract:
    A silicon interconnect structure includes a peripheral outer via in a silicon substrate, a solid core inner via in the silicon substrate, the solid core inner via coaxial with the peripheral outer via to form a coaxial via structure, a metal interconnect stack formed over a first surface of the peripheral outer via and the solid core inner via, at least portions of the metal interconnect stack forming an electrical connection with the peripheral outer via and the solid core inner via, first contact pads on a surface of the metal interconnect stack, and second contact pads on an exposed surface of the peripheral outer via and the solid core inner via.

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