Thomas J Groshens from 1235 Wayne St, Ridgecrest, CA 93555, age 71, Phone: (760)4467391

Lawyers & Attorneys

Thomas Groshens - Lawyer

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Specialties:

Appeals
Commercial
Discrimination
Commercial Litigation
Employment Law
Shareholder Disputes
Defamation
Antitrust

ISLN:

906850839

Admitted:

1987

University:

Princeton University, B.A., 1982

Law School:

Villanova University School of Law, J.D., 1987

Us Patents

Surface Imprinted Films With Carbon Nanotubes
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US Patent:

7119028, Oct 10, 2006
Filed:

Oct 29, 2003
Appl. No.:

10/699440
Inventors:

M. Joseph Roberts - Ridgecrest CA, US
Scott K. Johnson - Ridgecrest CA, US
Richard A. Hollins - Ridgecrest CA, US
Curtis E. Johnson - Ridgecrest CA, US
Thomas J. Groshens - Ridgecrest CA, US
David J. Irvin - Ridgecrest CA, US
Assignee:

The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:

H01L 21/302
US Classification:

438755, 438800, 438E5104, 977742, 977842, 977845
Abstract:

A film surface imprinted with nanometer-sized particles to produce micro- and/or nano-structured electron and hole collecting interfaces, including: at least one substrate; at least one photoabsorbing conjugated polymer (including polybutylthiophene (pbT)) applied on a substrate, nanometer-sized particles including multiwalled carbon nanotubes (MWNT) to produce a charge separation interface; at least one transparent polymerizable layer, wherein the MWNT are embedded in the conjugated polymer to produce mixture and applied on a substrate to form a MWNT bearing surface film layer to form a stamp surface which is imprinted into the surface of the polymerizable film layer to produce micro- and/or nano-structured electron and hole collecting interfaces; polymerizing the polymerizable film layer to form a conformal gap between the MWNT stamp surface and the surface of the polymerizable film layer, and filling the gap with a photoabsorbing material to promote the generation of photoexcited electrons and transport to the charge separation interface.

Method For Surface Imprinted Films With Carbon Nanotubes
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US Patent:

7435310, Oct 14, 2008
Filed:

Jun 7, 2006
Appl. No.:

11/452564
Inventors:

M. Joseph Roberts - Ridgecrest CA, US
Scott K. Johnson - Ridgecrest CA, US
Richard A. Hollins - Ridgecrest CA, US
Curtis E. Johnson - Ridgecrest CA, US
Thomas J. Groshens - Ridgecrest CA, US
David J. Irvin - Ridgecrest CA, US
Assignee:

The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:

B29C 39/12
US Classification:

156220, 156219, 156222, 156209, 977842, 977773, 977778
Abstract:

A method of making films surface imprinted with nanometer-sized particles to produce micro- and/or nano-structured electron and hole collecting interfaces, include providing at least one transparent substrate, providing at least one photoabsorbing conjugated polymer, providing a sufficient amount of nanometer-sized particles to produce a charge separation interface, providing at least one transparent polymerizable layer, embedding the nanometer-sized particles in the conjugated polymer, applying the polymerizable layer and the conjugated polymer/nanometer-sized particle mixture on separate substrates where the nanometer-sized particles form a stamp surface, imprinting the stamp surface into the surface of the polymerizable film layer to produce micro- and/or nano-structured electron and hole collecting interfaces, polymerizing the polymerizable film layer to form a conformal gap, and filling the gap with at least one photoabsorbing material to promote the generation of photoexcited electrons and transport to the charge separation interface.

3,3,7,7,-Tetrakis(Difluoramino)Octahydro-1,5-Diazocinium Salts And Method For Making The Same
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US Patent:

7563889, Jul 21, 2009
Filed:

Dec 10, 2004
Appl. No.:

11/010058
Inventors:

Robert D. Chapman - Ridgecrest CA, US
Thomas J. Groshens - Ridgecrest CA, US
Assignee:

The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:

C07D 245/00
US Classification:

540470
Abstract:

3,3,7,7-Tetrakis(difluoramino)octahydro-1,5-diazocinium intermediate salts and method for making the salts, through difluoramination followed by N-denosylation or N-deprotection, which are valuable for use as precursor(s) to HNFX as well as to other members of the rare class of 3,3,7,7-tetrakis(difluoramino)octahydro-1,5-diazocines.

Method For Making 3,3,7,7-Tetrakis(Difluoramino)Octahydro-1,5-Dinitro-1,5-Diazocine (Hnfx)
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US Patent:

7632943, Dec 15, 2009
Filed:

Dec 10, 2004
Appl. No.:

11/010059
Inventors:

Robert D. Chapman - Ridgecrest CA, US
Thomas J. Groshens - Ridgecrest CA, US
Assignee:

The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:

C07D 245/00
US Classification:

540470
Abstract:

A novel reaction scheme is presented for making a 3,3,7,7-tetrakis(difluoramino)octahydro-1,5-diazocinium salt, such as HNFX, from a tetrahydro-1,5-diazocine-3,7(2H,6H)-dione that does not employ N-nitrolysis,—but that instead requires protolytic N-deprotection, or protolytic denosylation, (i. e. , the nosyl N-protecting group is replaced with protons, forming the corresponding protonated amine or ammonium derivative). In summary, the present method subjects a suitably N-protected dione to difluoramination followed by protolytic N-deprotection by addition of a superacid and subsequent nitration utilizing an electrophilic nitrating agent to yield the diazocinium salt.

Chemical Hydrogen Storage Materials Having Guanidinium Borohydride
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US Patent:

8029602, Oct 4, 2011
Filed:

Mar 5, 2009
Appl. No.:

12/398249
Inventors:

Thomas J. Groshens - Ridgecrest CA, US
Assignee:

The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:

H01M 8/06
C07F 5/02
US Classification:

95 90, 4236582
Abstract:

A fuel cell and a method for chemically storing hydrogen. Embodiments of the fuel cell include a mixture having at least one boron-nitrogen-hydrogen compound and a reactive hydride where the mixture has more than about 10 wt % hydrogen density and a hydrogen storage density of about 0. 1 kg H1.

3,3,7,7-Tetrakis(Difluoramino)Octahydro-1,5-Diazocinium Salts
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US Patent:

8444783, May 21, 2013
Filed:

Jun 5, 2009
Appl. No.:

12/479278
Inventors:

Robert D. Chapman - Ridgecrest CA, US
Thomas J. Groshens - Ridgecrest CA, US
International Classification:

C06B 45/00
D03D 23/00
D03D 43/00
US Classification:

149 2, 1491094
Abstract:

3,3,7,7-Tetrakis(difluoramino)octahydro-1,5-diazocinium intermediate salts through difluoramination followed by N-denosylation or N-deprotection, which are valuable for use as precursor(s) to HNFX as well as to other members of the rare class of 3,3,7,7-tetrakis(difluoramino)octahydro-1,5-diazocines.

Use Of Tertiarybutylbis-(Dimethylamino)Phosphine In Forming Semiconductor Material By Chemical Vapor Deposition
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US Patent:

6020253, Feb 1, 2000
Filed:

Mar 5, 1999
Appl. No.:

9/267911
Inventors:

Robert W. Gedridge - Ridgecrest CA
Thomas J. Groshens - Ridgecrest CA
Kelvin T. Higa - Ridgecrest CA
Assignee:

The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:

H01L 2120
US Classification:

438478
Abstract:

A new compound, tertiarybutylbis-(dimethylamino)phosphine, ((CH. sub. 3). sub. 3 C)((CH. sub. 3). sub. 2 N). sub. 2 P, is used as a precursor in forming phosphorus-containing semiconductor material by chemical vapor deposition. Tertiarybutylbis-(dimethylamino)phosphine is prepared by reacting a phosphorus trihalide, PX. sub. 3, with the tertiarybutyl Grignard reagent ((CH. sub. 3). sub. 3 C)MgX. The resultant product is treated with lithium dimethylamide reagent LiN(CH. sub. 3). sub. 2. Tertiarybutylbis-(dimethylamino)phosphine is then recovered from the reaction mixture. Phosphorus-containing semiconductor materials are formed by chemical vapor deposition by means of bubbling a carrier gas through the new compound and then transporting the ((CH. sub. 3). sub. 3 C)((CH. sub. 3). sub. 2 N). sub. 2 P with the carrier gas to a heated substrate. Additional elements from groups II, III, V, and VI of the periodic table are then deposited on the substrate to form the Phosphorus-containing semiconductor materials.

Compound Tertiarybutylbis-(Dimethylamino)Phosphine And A Process For Preparing The Compound Tertiarybutylbis-(Dimethylamino)Phosphine
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US Patent:

60601191, May 9, 2000
Filed:

Feb 10, 1997
Appl. No.:

8/803208
Inventors:

Robert W. Gedridge - Ridgecrest CA
Thomas J. Groshens - Ridgecrest CA
Kelvin T. Higa - Ridgecrest CA
Assignee:

The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:

C23C 1600
US Classification:

42725538
Abstract:

A new compound tertiarybutylbis-(dimethylamino)phosphine and a process for preparing the compound, which has the formula ((CH. sub. 3). sub. 3 C) ((CH. sub. 3). sub. 2 N). sub. 2 P. The process has the steps of: (1) reacting phosphorus trihalide, PX. sub. 3, with tertiarybutyl Grignard reagent, ((CH. sub. 3). sub. 3 C)MgX, where X is a halide; (2) treating the resulting product with lithium dimethylamide, LiN(CH. sub. 3). sub. 2 to form a reaction mixture; and (3) recovering ((CH. sub. 3). sub. 3 C) ((CH. sub. 3). sub. 2 N). sub. 2 P from the reaction mixture.