Thomas B Kent

US Patent:

20220223484, Jul 14, 2022

Filed:

Mar 30, 2022

Appl. No.:

17/708329

Inventors:

- Columbus OH, US
Thomas KENT - Columbus OH, US
Katie T. LISZEWSKI - Powell OH, US
Isaac GOLDTHWAITE - Columbus OH, US

International Classification:

H01L 21/66
H01L 21/304
B23C 3/00
H01L 21/67

Abstract:

An assembly for monitoring a semiconductor device under test comprising a mill configured to mill the device, a sensor configured to measure an electrical characteristic of the device, and a computer configured to determine the amount of strain in the device from the electrical characteristic when the mill is milling the device and detect an endpoint of milling at a circuit within the device. In use the endpoints of the milling process of the semiconductor device are detected measuring an electrical characteristic of the device with a sensor during milling determining the amount of strain in the device from the electrical characteristic and detecting an endpoint of the milling process within the device based on the amount of strain.

US Patent:

20230044517, Feb 9, 2023

Filed:

Aug 5, 2022

Appl. No.:

17/817904

Inventors:

- Columbus OH, US
Andrew Elliott - Columbus OH, US
Adam Kimura - Lewis Center OH, US
Katie T. Liszewski - Powell OH, US
Thomas Kent - Columbus OH, US
Josh Delozier - Columbus OH, US
Benjamin Hayden - North Canton OH, US

International Classification:

G06F 30/327
G06F 30/337

Abstract:

The present disclosure provides a method for generating a spatially resolved netlist that includes generating a netlist based on integrated circuit (IC) layout data and standard cell library data, the netlist including cell and net definitions associated with the IC; determining position data for respective cells and nets based on the IC layout data; mapping the position data to respective cell and net definitions in the netlist; and generating a spatially resolved netlist that includes the mapped position data to respective cell and net definitions.

US Patent:

20200373211, Nov 26, 2020

Filed:

May 22, 2020

Appl. No.:

16/881848

Inventors:

- Columbus OH, US
Thomas KENT - Columbus OH, US
Katie LISZEWSKI - Powell OH, US
Isaac GOLDTHWAITE - Columbus OH, US

International Classification:

H01L 21/66
H01L 21/304
H01L 21/67
B23C 3/00

Abstract:

An assembly for monitoring a semiconductor device under test comprising a mill configured to mill the device, a sensor configured to measure an electrical characteristic of the device, and a computer configured to determine the amount of strain in the device from the electrical characteristic when the mill is milling the device and detect an endpoint of milling at a circuit within the device. In use the endpoints of the milling process of the semiconductor device are detected measuring an electrical characteristic of the device with a sensor during milling determining the amount of strain in the device from the electrical characteristic and detecting an endpoint of the milling process within the device based on the amount of strain.

US Patent:

20150048306, Feb 19, 2015

Filed:

Aug 19, 2014

Appl. No.:

14/463142

Inventors:

Roberto C. Myers - Columbus OH, US
Thomas F. Kent - Columbus OH, US

International Classification:

H01L 33/00
H01L 33/24
H01L 33/26
H01L 33/06

US Classification:

257 13

Abstract:

A diode comprises nanowires compositionally graded along their lengths with an active region doped with gadolinium sandwiched between first and second compositionally graded AlGaN nanowire regions. The first graded AlGaN nanowire region is graded from gallium-rich to aluminum-rich with the compositional grading defining n-type polarization doping and the aluminum-rich end proximate the active region. The second graded AlGaN nanowire region is graded from aluminum-rich to gallium-rich with the compositional grading defining p-type polarization doping and with the aluminum rich end proximate the active region. The active region may include a GdN layer sandwiched between AlN layers, or an AlGdN layer with y≧0.5. The nanowires may be disposed on a silicon substrate having a GaN surface, with the gallium-rich end of the first graded AlGaN nanowire region proximate to the GaN surface, and a semitransparent electrical contact disposed on the gallium-rich end of the second graded AlGaN nanowire region.