Thomas M Nowak

US Patent:

8203126, Jun 19, 2012

Filed:

Jul 22, 2010

Appl. No.:

12/841935

Inventors:

Juan Carlos Rocha-Alvarez - San Carlos CA, US
Thomas Nowak - Cupertino CA, US
Dale R. Du Bois - Los Gatos CA, US
Sanjeev Baluja - Sunnyvale CA, US
Scott A. Hendrickson - Brentwood CA, US
Dustin W. Ho - Fremont CA, US
Andrzei Kaszuba - San Jose CA, US
Tom K. Cho - Los Altos Hills CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G01N 21/00
G01N 21/33
B01J 19/08
B29C 35/08

US Classification:

250504R, 250365, 2504921, 2504922, 2504931

Abstract:

Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.

US Patent:

8216861, Jul 10, 2012

Filed:

Jun 28, 2011

Appl. No.:

13/171132

Inventors:

Kang Sub Yim - Palo Alto CA, US
Thomas Nowak - Cupertino CA, US
Bo Xie - Santa Clara CA, US
Alexandros T. Demos - Fremont CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/00

US Classification:

438 4, 438778, 257E21471

Abstract:

Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and carbon-containing compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.

US Patent:

20140053866, Feb 27, 2014

Filed:

Aug 19, 2013

Appl. No.:

13/970176

Inventors:

Alexandros T. DEMOS - Fremont CA, US
Kelvin CHAN - San Ramon CA, US
Juan Carlos ROCHA-ALVAREZ - San Carlos CA, US
Scott A. HENDRICKSON - Brentwood CA, US
Abhijit KANGUDE - Santa Clara CA, US
Inna TUREVSKY - Santa Clara CA, US
Mahendra CHHABRA - San Jose CA, US
Thomas NOWAK - Cupertino CA, US
Daping YAO - Portland OR, US
Bo XIE - San Jose CA, US
Daemian RAJ - San Jacino CA, US

Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA

International Classification:

B08B 7/00

US Classification:

134 11, 15634534

Abstract:

A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NFand Oto remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

US Patent:

63292971, Dec 11, 2001

Filed:

Apr 21, 2000

Appl. No.:

9/553694

Inventors:

Kenneth E. Balish - Fremont CA
Thomas Nowak - Sunnyvale CA
Tsutomu Tanaka - Santa Clara CA
Mark Beals - Sunnyvale CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2100

US Classification:

438714

Abstract:

A method and apparatus for enhancing the etch characteristics of a plasma formed in a remote plasma generator. A plasma formed in a remote plasma generator (27) is flown through a tube (62) to a plenum (60) where it is diluted to form a plasma mixture before flowing the plasma mixture into a processing chamber (15). The plasma mixture is used to clean deposits from the interior surfaces of the processing chamber, or can be used to perform an etch step on a process wafer within the processing chamber. In one embodiment, a plasma formed from NF. sub. 3 is diluted with N. sub. 2 to etch residue from the surfaces of a processing chamber used to deposit silicon oxide glass. Diluting the plasma increased the etching rate and made the etching rate more uniform across the diameter of the processing chamber.

US Patent:

20190304825, Oct 3, 2019

Filed:

Jun 17, 2019

Appl. No.:

16/443185

Inventors:

- Santa Clara CA, US
Juan Carlos ROCHA-ALVAREZ - San Carlos CA, US
Sanjeev BALUJA - Campbell CA, US
Ganesh BALASUBRAMANIAN - Fremont CA, US
Lipyeow YAP - Santa Clara CA, US
Jianhua ZHOU - Campbell CA, US
Thomas NOWAK - Cupertino CA, US

International Classification:

H01L 21/68
H01L 21/687
H01L 21/67
H01L 21/324
B05C 13/00
H01J 37/32
C23C 16/458

Abstract:

A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering fingers for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering fingers are movably disposed along a periphery of the support surface, and each of the plurality of centering fingers comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.

US Patent:

20160296981, Oct 13, 2016

Filed:

Jun 13, 2016

Appl. No.:

15/180514

Inventors:

- Santa Clara CA, US
Alexandros T. DEMOS - Fremont CA, US
Kelvin CHAN - San Ramon CA, US
Juan Carlos ROCHA-ALVAREZ - San Carlos CA, US
Scott A. HENDRICKSON - Brentwood CA, US
Abhijit KANGUDE - Mountain View CA, US
Inna TUREVSKY - Santa Clara CA, US
Mahendra CHHABRA - San Jose CA, US
Thomas NOWAK - Cupertino CA, US
Daping YAO - Portland OR, US
Bo XIE - San Jose CA, US
Daemian RAJ - Fremont CA, US

International Classification:

B08B 7/00
B08B 5/00
C23C 16/48
C23C 16/44
C23C 16/455
B08B 9/08
B08B 17/02

Abstract:

A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NFand Oto remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

US Patent:

20160093521, Mar 31, 2016

Filed:

Oct 5, 2015

Appl. No.:

14/875392

Inventors:

- Santa Clara CA, US
Juan Carlos ROCHA-ALVAREZ - San Carlos CA, US
Sanjeev BALUJA - Campbell CA, US
Ganesh BALASUBRAMANIAN - Sunnyvale CA, US
Lipyeow YAP - Santa Clara CA, US
Jianhua ZHOU - Campbell CA, US
Thomas NOWAK - Cupertino CA, US

International Classification:

H01L 21/68
H01L 21/67
H01L 21/324
H01L 21/687

Abstract:

A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering members are movably disposed along a periphery of the support surface, and each of the plurality of centering members comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.

US Patent:

20160017497, Jan 21, 2016

Filed:

Sep 29, 2015

Appl. No.:

14/869371

Inventors:

- Santa Clara CA, US
Xinhai HAN - Fremont CA, US
Michael TSIANG - Fremont CA, US
Masaki OGATA - San Jose CA, US
Zhijun JIANG - Sunnyvale CA, US
Juan Carlos ROCHA-ALVAREZ - San Carlos CA, US
Thomas NOWAK - Cupertino CA, US
Jianhua ZHOU - Campbell CA, US
Ramprakash SANKARAKRISHNAN - San Jose CA, US
Amit Kumar BANSAL - Sunnyvale CA, US
Jeongmin LEE - Santa Clara CA, US
Todd EGAN - Fremont CA, US
Edward BUDIARTO - Fremont CA, US
Dmitriy PANASYUK - Santa Clara CA, US
Terrance Y. LEE - Oakland CA, US
Jian J. CHEN - Fremont CA, US
Mohamad A. AYOUB - Los Gatos CA, US
Heung Lak PARK - San Jose CA, US
Patrick REILLY - Dublin CA, US
Shahid SHAIKH - Santa Clara CA, US
Bok Hoen KIM - San Jose CA, US
Sergey STARIK - Kiev, UA
Ganesh BALASUBRAMANIAN - Sunnyvale CA, US

International Classification:

C23C 16/52
C23C 16/46
C23C 16/509
C23C 16/455

Abstract:

A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.